DL04-18F1_10 SHINDENGEN | Alldatasheet
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Technical content
Bi-directional zener diode — Small Surface Mount Device Bi-directional Zener Diode 1F Package DLO04-18F1 Wi OUTLINE Mi4$tEEd CHARACTERISTIC DIAGRAMS . : Unitmn wh eRe IL-999 VBE CARY SERRE D L04 | 8 F | Package 1F Welght 0.058 g Reverse Current vs Junctuon Temperature Breakdown Voltage Peak Surge Reverse Current id 2 18V 400W Ze] |g a pe oA 1) mm 7 Sy , 3 ody EI 2 es ao Sea BL “IW9S5R EE @>-ft—® 2 ett EF RA 2 5 s i + \\EISMD Fr gn =
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onl | TYP TYP = + 1W Class = E Pulse Test In=5mA s ve (Ld “ + Bi-direction - - 40 15 a \\ Seal SMD 7 ae D 30 100 730 y 30 0 730 mT Or 1 Junction Temperature 7 [°C] Junction Temperature 7; [°C] Pulse Width AMER IL OV CMR Web H7 b MIL CHM AR — BER) & OSM FE BU PRAIAEARIC OV VC CEERI Cea FAVS For details of outline dimensions, refer to our web site or the a ea ean ean Semiconductor Short Form Catalog. As for the marking, refer to Ta iiriec(Ganenereet ech Junetion Capacitance 1-C) the specification “Marking, Terminal Connection. ” 100; Ee 1000, HEX RATINGS d feet g Sere > Item Symbol Conditions Ratings Unit S ibn) esinaaesn 8 io Bio | RPMI y 5 iS] S etme | Tae | zo 5 5 ATONE 5 C g g 5 | ipeatin mtn topos | TH tw “ : 2 EAGT — RET a 10/1000u5 JERRY IL Cy 7 TERED IML 7 10x 100048 =100kH a, rely EET a is 1 1 1013 1 10 106 3 @B AH ARIE Electical Characteristics (Him #2v 44 T1=25/unless otherwise specified) %*Sine wavelS50H2 CME LTE TF.
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Typicalldiiat hte RA #2 LTE, *%*Semiconductor products generally have characterristic variation. Typical a statistical average of the devices ability.