DI200 ZSELEC | Alldatasheet
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/circle6 /circle6 /circle6 High Current Capability /circle6 /circle6 /circle6 P l a s t i c M a t e r i a l – U L R e c o g n i t i o n F l a m m a b i l i t y M ec h a n i c a l D a t a /circle6 /circle6 Te rminals: Plated Leads Solderable per /circle6 P o l a r i t y : A s M a r k e d o n C a s e /circle6 /circle6 Mounting Position: Any /circle6 Marking: Type Number Maximum Ra tings and Electrical Characteristics @TA=25°C unle ss otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit P ea k Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RM S Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V A verage Rectified Output Current @T A = 40°C IO Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A 0.98 V Pe a k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 125°C IRM 2.0 500 µA T y pical Junction Capacitance per element (Note 1) C j 25 pF T y pical Thermal Resistance per leg (Note 2) RθJA RθJL 15 °C Operating and Storage Temperature Range Tj, TSTG -55 t o +150 °C Note: 2. Mounted on PC board with 13mm 2 copper pad 1 of 2 DE H JK L M BA C G Dim Min Max A 6.20 6.50 B 6.80 8.40 C 7.24 8.70 D 0.20 0.38 E G H 1.30 J 3.80 4.90 K L M All Dimensions in mm 0.90 1.40 5.00 5.20 0.45 0.58 8.12 8.80 2.15 3.40 ! Lead Free: For RoHS / Lead Free Version www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. Forward Voltage per element @I F = 2.0A V FM DI200 – DI2010 DI200 - DI2010 DI2010DI201DI200 DI202 DI204 DI206 DI208 C as e : D I P, M o l d e d P l a s t i c DIP
0.01 0.1 1.0 I , INSTANTANEOUS FORWARD CURRENT (A) F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 11 0 100 I PEAK FORWARD SURGE CURRENT (A) FS M NU M BER OF CYCLES AT 60 Hz Fig. 3 MaxN on-Repetitive Peak Forward Surge Cur rent Sing le half-sine-Wave (JEDEC Method) 100 1 10 100 C CAPACITANCE (pF) J V , REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) R T = 25°c f = 1.0 Mhz V = 50 mV p-p j sig 0.01 0.1 1.0 100 2004 0 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (µA) R PE RCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) T = 125 °Cj T = 25°Cj www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. 1.0 2.0 40 60 80 100 1 20 140 I AVERAGE FORWARD CURRENT (A) T ,AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve A Hz Resistive or Inductive load 1.5 DI200 – DI2010 DI200 - DI2010