DI100S ZSELEC | Alldatasheet
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a 2.15 3. 9.30 10.30 6.20 6.50 7.40 7.90 1.0 A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Feat ures /circle6 G la s s P a s s i v a t e d D i e C o n s t r u c t i o n G /circle6 L o w F o r w a r d V o l t a g e D r o p /circle6 High Current Capability /circle6 H i g h S u r g e C u r r e n t C a p a b i l i t y /circle6 Designed for Surface Mount Application B ~ ~ A D E /circle6 P l a s t i c M a t e r i a l – U L R e c o g n i t i o n F l a m m a b i l i t y C l a s s i f i c a t i o n 9 4 V - O C L H M e ch a n i c a l D a t a J /circle6 /circle6 Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 K /circle6 P o l a r i t y : A s M a r k e d o n C a s e /circle6 Weight: 1.0 grams (approx.) /circle6 Mounting Position: Any /circle6 Marking: Type Number M aximum Ratings and Electrical Characteristics @TA=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR( RMS) 35 70 140 280 420 560 700 V A verage Rec tified Output Current @T A = 40°C I O 1. 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 50 A Forward Voltage per element @I F = 1 .0A V FM 0.98 V Pea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 125°C IRM 2. 500 µA Typical Junction Capacitance per element (Note 1) C j 25 pF Typical Thermal Resistance per leg (Note 2) RθJA RθJL 15 °C/ W Operat ing and Storage Temperature Range Tj, TST G -55 to +150 ° C Not 2. Mounted on PC board with 13mm 2 c opper pad. Dim Min Max A B C 0.25 — D 0.08 0.33 E G 1. 02 1.53 H 8. 00 8.51 J K 5. 00 5.20 L 0.90 1.20 A ll Dimensions in mm 1 of 2 ! Le ad Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DI100S - DI1010S DI1010SDI101SDI100S DI102S DI104S DI106S DI108S DI100S – DI1010S C as e : S D I P, M o l d e d P l a s t i c SDIP
0.01 0.1 1.0 I , INST ANTANEOUS FORWARD CURRENT (A) F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 100 1 10 100 C ,CAP ACITANCE (pF) J V , REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) R T = 25°c f =
1.0 Mhz
V = 50 mV p-p j sig 0.01 0.1 1.0 100 2004 0 6 0 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (µA) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) T = 125 °Cj T = 25°Cj 1.0 0.5 40 60 80 100 120 140 I , A VERAGE FORWARD CURRENT (A) (AV) T , AMBIENT T EMPERATURE (°C) Fig. 1 Output Current Derating Curve A 60 Hz Resistive or Inductive load Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 11 0 1 00 I , P EAK FORWARD SURGE CURRENT (A) FSM NUM BE R OF CYCLES AT 60 Hz Fig. 3 MaxN o n-Repetitive Peak Forward Surge Curr ent Singl e half-sine-Wave (JEDEC Method) DI100S – DI1010S DI100S - DI1010S