HGB037N10S HUNTECK | Alldatasheet

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ID (Package Limited) A mJ HGP037N10S TO-220 GP037N10S RDS(on),typ TO-220 120 A Unit V 100 Gate to Source Voltage VGS - ±20 V GB037N10S RDS(on),typ TO-263 RDS(on),typ TO-247 TO-263 Conditions 300 GK037N10S Avalanche Energy, Single Pulse EAS L=0.1mH, TC=25℃ 180 Pulsed Drain Current IDM - ID TC=25℃ 400 TO-263 Value Continuous Drain Current (Silicon Limited) Drain to Source Voltage VDS - V1.0 Max UnitSymbol Thermal Resistance Junction-Ambient 0.5Thermal Resistance Junction-Case Parameter Mar.2017 RθJA 60 ℃/W RθJC W Operating and Storage Temperature TJ, Tstg - -55 to175 ℃ PD TC=25℃Power Dissipation ℃/W Absolute Maximum Ratings P-1 100V N-Ch Power MOSFET HGK037N10SHGB037N10S HGP037N10S VDS 100 V 2.8 mΩ 120 A mΩ3.1 190 Absolute Maximum Ratings at T j=25℃ (unless otherwise specified) TC=25℃ Parameter Symbol TC=100℃ 134 A Continuous Drain Current (Package Limited) mΩ HGK037N10S ID (Sillicon Limited) 190 Part Number Package Marking HGB037N10S Drain Pin2 Src Pin3 Gate Pin 1 Feature ◇High Speed Power Switching ◇Enhanced Body diode dv/dt capability ◇Enhanced Avalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools ◇UPS ◇Motor Control TO-220TO-263 TO-247

3.6 HGB037N10S HGK037N10S V ns- tr Turn off Delay Time td(off) Diode Forward Voltage VSD VGS=0V, IF=20A - 0.9 TO-247 - 3 1.2 Reverse Diode Characteristics -92 580 VDD=50V, ID=20A, VGS=10V Turn on Delay Time td(on) VDD=50V, ID=20A, VGS=10V, RG=10Ω, Fall Time tf V1.0 Mar.2017 nsReverse Recovery Time Reverse Recovery Charge Qrr - trr VR=50V, IF=30A, dIF/dt=500A/µs 550 - nC 64 - Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain (Miller) Charge Qgd - 56 -Rise time nC- 27 - - 21 118 - Drain to Source on Resistance RDS(on) Dynamic Characteristics Input Capacitance Ciss VGS=0V, VDS=50V, f=1MHz pF- Gate Resistance RG VGS=0V, VDS Open, f=1MHz - 0.7 S TO-220 - 3.1 3.7 VGS=10V, ID=20A TO-263 ±100 nA - Ω 3.4 mΩ Reverse Transfer Capacitance Transconductance gfs 90 Crss Output Capacitance - 18 Coss - VDS=5V, ID=20A 7300 Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - - 2 2.8 Drain to Source Breakdown Voltage V(BR)DSS µA VGS=0V, VDS=100V, Tj=100℃ - - 100 - 1 -VGS=0V, ID=250µA HGP037N10S - 2.8 max 100 P-2 Electrical Characteristics at T j=25℃ (unless otherwise specified) Static Characteristics Parameter Symbol Conditions Value Unittypmin Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=100V, Tj=25℃ - VGate Threshold Voltage VGS(th) VGS=VDS, ID=250µA

, HGK037N10S V1.0 Mar.2017 P-5 Inductive switching Test Gate Charge Test Uclamped Inductive Switching (UIS) Test Diode Recovery Test HGB037N10S HGP037N10S

,HGB037N10S HGK037N10S P-6 Package Outline TO-220, 3 leads Dimentions in mm unless otherwise specified A2 9.80 10.00 10.20 HGP037N10S B 15.60 15.70 15.80 Symbol Min Nom Max A 9.66 9.97 10.28 C 12.70 13.48 14.27 D 4.30 4.50 4.70 G1 1.32 1.52 1.72 G2 0.70 0.82 0.95 E 9.00 9.20 9.40 F 2.54 I 2.70 2.80 2.90 J 15.70 15.97 16.25 G3 0.45 0.52 0.60 H 3.50 3.60 3.70 N 6.40 6.60 6.80 TO-263, 2 leads Dimentions in mm unless otherwise specified K 2.20 2.40 2.60 L 1.15 1.27 1.40 B 1.02 1.17 1.32 C 8.59 9.00 9.40 Symbol Min Nom Max A 9.66 9.97 10.28 D3 5.08 E 15.09 15.24 15.39 D1 1.14 1.27 1.40 D2 0.70 0.83 0.95 H 2.29 2.54 2.79 I 0.25 F 1.15 1.28 1.40 G 4.30 4.50 4.70 a2(degree) 0° 8° V1.0 Jun.2015 K 1.30 1.45 1.60 a1 0.45 0.55 0.65

K 2.20 2.40 2.60 G3 0.45 0.52 0.60 J 15.70 15.97 16.25 B 15.60 15.70 15.80 C 12.70 13.48 14.27 Dimentions in mm unless otherwise specified Symbol Min Nom Max HGB037N10S HGK037N10S P-6 Package Outline TO-247, 3 leads HGP037N10S 9.66 9.97 10.28 A2 9.80 10.00 10.20 A E 9.00 9.20 9.40 D 4.30 4.50 4.70 F 2.54 H 3.50 3.60 3.70 G1 1.32 1.52 1.72 G2 0.70 0.82 0.95 V1.0 Jun.2015 I 2.70 2.80 2.90 N 6.40 6.60 6.80 L 1.15 1.27 1.40