DG2731DN-T1-E4

DG2731 VISHAY | Alldatasheet

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Document Number: 73484 S-51920–Rev. A, 12-Sep-05 www.vishay.com Low Voltage, 0.4 Ω, Dual SPDT Analog Switch

DESCRIPTION

The DG2731/2732/2733 are low voltage, low on-resis- tance, dual single-pole/double-throw (SPDT) mono- lithic CMOS analog switches designed for high performance switching of analog signals. Combining low-power, high speed, low on-resistance, and small package size, the DG2731/2732/2733 are ideal for portable and battery power applications. The DG2731/2732/2733 have an operation range from 1.6 V to 4.3 V single supply. The DG2731 and DG2732 have two separate control pins with reverse control logic. The DG2733 has an EN pin to enable the device when the logic is high. The DG2731/2732/2733 are 1.6-V logic compatible, allowing the easy interfac e with low voltage DSP or MCU control logic and ideal for one cell Li-ion battery direct power. The switch conducts signals within power rails equally well in both directions when on, and blocks up to the power supply level when off. Break-before-make is guaranteed. The DG2731/2732/2733 are built on Vishay Siliconix's sub micron CMOS low voltage process technology and provides greater than 300 mA latch-up protection, as tested per JESD78. As a committed partner to the community and the envi- ronment, Vishay Siliconix manufactures this product with lead (Pb)-free device terminations. DG2731/2732/ 2733 are offered in a DFN or MSOP package. The DFN package has a nickel-palladium-gold device ter- mination and is represented by the lead (Pb)-free "-E4" suffix. The MSOP package uses 100% matte Tin device termination and is represented by the lead (Pb)- free "-E3" suffix. Both the matte Tin and nickel-palla- dium-gold device terminations meet all JEDEC stan- dards for reflow and MSL ratings.

FEATURES

 Low Voltage Operation (1.65 V to 4.3 V)  Low On-Resistance - r ON: 0.3 Ω@ 3.6 V  Fast Switching: T ON = 50 ns @ 4.3 V T OFF = 14 ns @ 4.3 V  Latch-Up Current > 300 mA (JESD78) BENEFITS  Reduced Power Consumption  High Accuracy  Reduce Board Space  TTL/1.6-V Logic Compatible

APPLICATIONS

 Cellular Phones  Speaker Headset Switching  Audio and Video Signal Routing  PCMCIA Cards  Battery Operated Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION RoHS COMPLIANT

www.vishay.com Document Number: 73484 S-51920–Rev. A, 12-Sep-05 Vishay Siliconix DG2731/2732/2733 Notes a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/C above 70°C d. Derate 14.9 mW/C above 70°C e. Manual soldering with iron is not recommended for leadless com ponents. The QFN is a leadless package. The end of the lead te rminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. TRUTH TABLE Logic EN (DG2733 only) NC1, 2 NO1, 2 01O N O F F

11 O F F O N

00 O F F O F F

10 O F F O F F

ORDERING INFORMATION

Temp Range Package Part Number –40 to 85°C MSOP–10 DG2731DQ–T1–E3 DG2732DQ–T1–E3 DG2733DQ–T1–E3 DFN–10 DG2731DN–T1–E4 DG2732DN–T1–E4 DG2733DN–T1–E4 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Reference to GND V+ –0.3 to 5.0 V IN, COM, NC, NOa –0.3 to (V+ + 0.3) Current (Any terminal except NO, NC or COM) 30 mAContinuous Current (NO, NC, or COM) ±250 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ±500 Storage Temperature (D Suffix) –65 to 150 °C Package Solder Reflow Conditionsd 10–PIN MSOP 10–PIN DFN Power Dissipation (Packages)b MSOP–10c 320 mW DFN–10d 1191 SPECIFICATIONS (V+ = 1.8 V) Parameter Symbol Test Condition Otherwise Unless Specified V+ = 1.8 V, VIN = 0.4 or 1.4 Ve Tempa Limits –40 to 85°C Unit Minb Typ c Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 1.8 V, VCOM = 0.9 V, INO, INC = 100 mA Room 0.7 1.0 Ω Full 1.2 Digital Control Input High Voltage V INH Full 1.4 VInput Low Voltage V INL Full 0.4 Input Capacitance C in Full 4 pF Power Supply Power Supply Current I+ V IN = 0 or V+ Full 1.0 µA

Document Number: 73484 S-51920–Rev. A, 12-Sep-05 www.vishay.com Vishay Siliconix DG2731/2732/2733 SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Condition Otherwise Unless Specified V+ = 3 V, ±10 %, VIN = 0.5 or 1.4 Ve Tempa Limits –40 to 85°C Unit Minb Typ c Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 2.7 V, VCOM = 0.5 V, INO, INC = 100 mA Room 0.35 0.45 Ω V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 100 mA 0.3 Full 0.6 rON Matchd ∆rON V+ = 2.7 V, VCOM = 0.5 to 1.5 V, INO, INC = 100 mA Room 0.03 0.06 Switch Off Leakage Current INO(off), INC(offF) V+ = 3.3 V, VNO, VNC = 0.3 V / 4.0 V, VCOM = 3.0 V / 0.3 V Room Full –10 nAICOM(off) Room Full –10 Channel-On Leakage Current ICOM(on) V+ = 3.3 V, VNO, VNC = VCOM = 3.0 V / 0.3 V Room Full –10 Digital Control Input High Voltage V INH Full 1.4 VInput Low Voltage V INL Full 0.5 Input Capacitance C in Full 5 pF Input Current I INL or IINH VIN = 0 or V+ Full –1 1 µA Dynamic Characteristics Tur n-On Time tON V+ = 3.6 V VNO or VNC = 1.5 V, RL = 50 Ω, CL = 35 pF Room Full 85 110 140 nsTurn-Off Time tOFF Room Full 17 30 Break-Before-Make Time t BBM Full 10 Charge Injectiond QINJ CL = 1 nF , VGEN = 0 V, RGEN = 0 Ω Room 9p C Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF , f = 100 kHz Room –75 dB Crosstalkd XTALK Room –75 NO, NC Off Capacitanced CNO(off) VIN = 0 or V+, f = 1 MHz Room 104 pF CNC(off) Room 104 Channel On Capacitanced CNO(on) Room 230 CNC(on) Room 230 Power Supply Power Supply Range V+ 2.7 3.3 V Power Supply Current I+ V IN = 0 or V+ Full 1.0 µA Tur n-On Time DG2733 (EN) tON(EN) V+ = 3.6 V VNO or VNC = 1.5 V, RL = 50 Ω, CL = 35 pF Room Full 79 105 135 nsTurn-Off Time DG2733 (EN) tOFF(EN) Room Full 17 29

www.vishay.com Document Number: 73484 S-51920–Rev. A, 12-Sep-05 Vishay Siliconix DG2731/2732/2733 Notes a. Room = 25°C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 4.3 V) Parameter Symbol Test Condition Otherwise Unless Specified V+ = 4.3 V, VIN = 0.5 or 1.6 Ve Tempa Limits –40 to 85°C Unit Minb Typ c Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 4.3 V, VCOM = 0.9 V, INO, INC = 100 mA Room 0.29 0.4 Ω V+ = 4.3 V, VCOM = 2.5 V, INO, INC = 100 mA 0.21 Full 0.55 rON Matchd ∆rON V+ = 4.3 V, VCOM = 0. 9 to 2.5 V+, INO, INC = 100 mA Room 0.03 0.06 Switch Off Leakage Currentd INO(off), INC(off) V+ = 4.3 V, VNO, VNC = 0.3 V / 4.0 V, VCOM = 4.0 V / 0.3 V Full –20 20 nAICOM(off) Full –20 20 Channel-On Leakage Currentd ICOM(on) V+ = 4.3 V, VNO, VNC = VCOM = 3.0 V / 4.0 V Full –20 20 Digital Control Input High Voltage V IN Full 1.6 VInput Low Voltage V INL Full 0.5 Input Capacitance C in Full –4 pF Input Current I INL or IINH VIN = 0 or V+ Full –1 1 µA Dynamic Characteristics Break-Before-Make Time t BBM VNO or VNC = 1.5 V, RL = 50 Ω, CL = 35 pF Full 5n s Power Supply Power Supply Range V+ 4.3 V Power Supply Current I+ V IN = 0 or V+ Full 1.0 µA

Document Number: 73484 S-51920–Rev. A, 12-Sep-05 www.vishay.com Vishay Siliconix DG2731/2732/2733 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VCOM – Analog Voltage (V) – On-Resistance (rON Ω ) TC = 25˚C IS = 100 mA V+ = 1.8 V V+ = 4.3 V V+ = 2.7 V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 VCOM – Analog Voltage (V) – On-Resistance (rON Ω ) IS = 100 mA V+ = 4.3 V 85˚C 25˚C –40˚C 10 10 K 100 K 10 M100 1 K 1 M 100 mA 1.0 mA 10 nA I+ – Supply Current (A) V+ = 4.3 V 100 nA In p ut Switchin g Fre q uenc y Hz 10 mA rON vs. Analog Voltage and Temperature Supply Current vs. Temperature Supply Current vs. VIN 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VCOM – Analog Voltage (V) – On-Resistance (rON Ω ) 85˚C IS = 100 mA V+ = 2.7 V 25˚C –40˚C –40 –10 20 50 80 Temperature (˚C) I+ – Supply Current (nA) V+ = 4.3 V V IN = 0 V 100 1000 10000 VIN 10.0E–3 100.0E–6 10.0E–9 100.0E–12 1.0E–6 V+ = 2.7 V V+ = 3.6 V V+ = 4.3 V 012345

www.vishay.com Document Number: 73484 S-51920–Rev. A, 12-Sep-05 Vishay Siliconix DG2731/2732/2733 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Leakage Current vs. Temperature Switching Time vs. Temperature Switching Threshold vs. Supply Voltage –40 –20 0 20 40 60 80 100 Temperature (˚C) ICOM(off) Leakage Current (pA) 10000 1000 100 ICOM(on) V+ = 4.3 V VD = 4 V INO(off), INC(off) 100 150 200 250 –40 –20 0 20 40 60 80 100 Frequency (Hz) /t ON – Switching Time (t OFF s)µ tON V+ = 1.8 V tON V+ = 2.7 V tON V+ = 4.3 V tOFF V+ = 1.8 V tOFF V+ = 2.7 V tOFF V+ = 4.3 V 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 1.5 2.5 3.5 4.5 V+ – Su pp l y Volta g e V – Switching Threshold (V)VT Leakage vs. Analog Voltage Insertion Loss, Off-Isolation Crosstalk vs. Frequency Charge Injection vs. Analog Voltage –14000 –13000 –12000 –11000 –10000 –9000 –8000 –7000 –6000 –5000 –4000 –3000 –2000 –1000 1000 2000 3000 4000 VCOM, VNO, VNC – Analog Voltage (V) Leakage Current (pA) V+ = 4.3 V TA = 25 C ICOM(on) INO(off), IINC(off) ICOM(off) –90 –80 –70 –60 –50 –40 –30 –20 –10

100 K 10 M 100 M 1 G1 M

(dB)Loss, OIRR, XTALK LOSS OIRR XTALK V+ = 2.7 V RL = 50 Ω Temperature (˚C) VCOM – Analog Voltage (V) Q – Charge Injection (pC) V+ = 3 V V+ = 4.3 V

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.