DG2714

DG2714 VISHAY | Alldatasheet

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Technical content

NO (Source1) COM NC (Source2) Top View IN GND 4 SC-70 Device Marking: E8xx DG2714 Vishay SiliconixNew Product Document Number: 72308 S-31310—Rev. A, 30-Jun-03 www.vishay.com Low-Voltage Single SPDT Analog Switch

FEATURES

/C0068Low Voltage Operation (1.6 V to 3.6 V) /C0068Low On-Resistance - rDS(on): 0.85 /C0087 Typ. /C0068Fast Switching - tON : 28 ns, tOFF: 12 ns /C0068Low Leakage /C0068TTL/CMOS Compatible /C00686-Pin SC-70 Package BENEFITS /C0068Reduced Power Consumption /C0068Simple Logic Interface /C0068High Accuracy /C0068Reduce Board Space

APPLICATIONS

/C0068Cellular Phones /C0068Communication Systems /C0068Portable Test Equipment /C0068Battery Operated Systems /C0068Sample and Hold Circuits

DESCRIPTION

The DG2714 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 28 ns, tOFF: 12 ns), low on-resistance (r DS(on): 0.85 /C0087) and small physical size (SC70), the DG2714 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2714 is built on Vishay Siliconix’s low voltage submicron CMOS process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG2714. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE Logic NC NO

0 ON OFF

1 OFF ON

ORDERING INFORMATION

Temp Range Package Part Number -40 to 85°C SC70-6 DG2714DL

Vishay Siliconix New Product www.vishay.com Document Number: 72308 S-31310—Rev. A, 30-Jun-03 ABSOLUTE MAXIMUM RATINGS Reference to GND (Pulsed at 1 ms, 10% duty cycle) Power Dissipation (Packages)b Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/ /C0095C above 70/C0095C SPECIFICATIONS (V+ = 1.8 V) Test Conditions Otherwise Unless Specified Limits -40 to 85/C0095C Parameter Symbol V+ = 1.8 V, /C003410%, VIN = 0.4 or 1.1 Ve Tempa Minb Typc Maxb Unit Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 1.8 V, VCOM = 0.2 V/0.9 V INO, INC = 10 mA Room Fulld 1.8 3.0 4.5 rON Flatnessd rON Flatness V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room 2 /C0087 rON Matchd /C0068rON V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room 0.06 Switch Off Leakage Currentf INO(off), INC(off) V+ = 2.2 V Room Fulld -10 Switch Off Leakage Currentf ICOM(off) V+ = 2.2 V VNO, VNC = 0.2 V/2.0 V, VCOM = 2.0 V/0.2 V Room Fulld -10 10 nA Channel-On Leakage Current f ICOM(on) V+ = 2.2 V, VNO, VNC = VCOM = 0.2 V/2.0 V Room Fulld -10 Digital Control Input High Voltage VINH Full 1.1 V Input Low Voltage VINL Full 0.4 V Input Capacitanced Cin Full 3.5 pF Input Currentf IINL or IINH VIN = 0 or V+ Full -1 1 /C0109A Dynamic Characteristics Turn-On Timed tON V V 15 V R 300 /C0087 C 35 F Room Fulld 55 75 Turn-Off Timed tOFF VNO or VNC = 1.5 V, RL = 300 /C0087, CL = 35 pF Figures 1 and 2 Room Fulld 19 39 ns Break-Before-Make Timed td Room 3 Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 /C0087, Figure 3 Room 13 pC Off-Isolationd OIRR RL = 50 /C0087 CL = 5 pF f = 1 MHz Room -64 dB Crosstalkd XTALK RL = 50 /C0087, CL = 5 pF, f = 1 MHz Room -64 dB NO, NC Off Capacitanced CNO(off), CNC(off) VIN = 0 or V+, f = 1 MHz Room 32 pF Channel-On Capacitanced CON VIN = 0 or V+, f = 1 MHz Room 78 pF

Vishay SiliconixNew Product Document Number: 72308 S-31310—Rev. A, 30-Jun-03 www.vishay.com SPECIFICATIONS (V+ = 3.0 V) Test Conditions Otherwise Unless Specified Limits -40 to 85/C0095C Parameter Symbol V+ = 3 V, /C003410%, VIN = 0.5 or 1.5 Ve Tempa Minb Typc Maxb Unit Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO INC = 100 mA Room Full 0.85 1.2 1.3 rON Flatness rON Flatness V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 100 mA Room 0.2 /C0087 rON MatchFlat /C0068rON V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 100 mA Room 0.06 Switch Off Leakage Current INO(off), INC(off) V+ = 3.3 V Room Full -10 Switch Off Leakage Current ICOM(off) V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V Room Full -10 10 nA Channel-On Leakage Current ICOM(on) V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V Room Full -10 Digital Control Input High Voltage VINH Full 1.5 V Input Low Voltage VINL Full 0.5 V Input Capacitanced Cin Full 3.3 pF Input Currentf IINL or IINH VIN = 0 or V+ Full -1 1 /C0109A Dynamic Characteristics Turn-On Time tON V V 20 V R 300 /C0087 C 35 F Room Full 28 51 Turn-Off Time tOFF VNO or VNC = 2.0 V, RL = 300 /C0087, CL = 35 pF Figure 1 and 2 Room Full 12 33 ns Break-Before-Make Time td Room 1 Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 /C0087, Figure 3 Room 9 pC Off-Isolationd OIRR RL = 50 /C0087 CL = 5 pF f = 1 MHz Room -64 dB Crosstalkd XTALK RL = 50 /C0087, CL = 5 pF, f = 1 MHz Room -64 dB NO, NC Off Capacitanced CNO(off), CNC(off) VIN = 0 or V+, f = 1 MHz Room 30 pF Channel-On Capacitanced CON VIN = 0 or V+, f = 1 MHz Room 77 pF Power Supply Power Supply Range V+ 1.5 3.6 V Power Supply Current I+ V+ = 3.6 V, VIN = 0 or V+ 0.01 1.0 /C0109A Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data s heet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. V IN = input voltage to perform proper function. f. Guaranteed by 3-V leakage testing, not production tested.

Vishay Siliconix New Product www.vishay.com Document Number: 72308 S-31310—Rev. A, 30-Jun-03 TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.0 0.5 1.0 1.5 2.0 2.5 100 m -60 -40 -20 0 20 40 60 80 100 100 -60 -40 -20 0 20 40 60 80 100 Supply Current vs. Input Switching Frequency Input Switching Frequency (Hz)

10 K 1 M 10 M100 K1 K10010

Supply Current vs. Temperature Temperature (/C0095C) I+ - Supply Current (nA) - On-Resistance (rON /C0087) 0.0 0.5 1.0 1.5 2.0 2.5 -300 -250 -200 -150 -100 -50 100 150 200 250 300 Leakage Current vs. Temperature Leakage vs. Analog Voltage VCOM, VNO, VNC - Analog Voltage rON vs. VCOM and Single Supply Voltage VCOM - Analog Voltage (V) V+ = 1.8 V V+ = 2 V V+ = 3.6 V rON vs. Analog Voltage and Temperature - On-Resistance (rON /C0087) VCOM - Analog Voltage (V) V+ = 1.8 V V+ = 2.9 V 85/C0095C -40/C0095C 25/C0095C V+ = 3 V VIN = 0 V I+ - Supply Current (A) Leakage Current (pA) Temperature (/C0095C) 1000 V+ = 3.3 V INO(off)/INC(off) ICOM(on)ICOM(off) Leakage Current (pA) V+ = 3.3 V T = 25/C0095C INO(off)/INC(off) ICOM(on) ICOM(off) 1 m 100 /C0109 10 /C0109 1 /C0109 10 n 100 n T = 25/C0095C IS = 10 mA IS = 100 mA V+ = 3.0 V 85/C0095C -40/C0095C 25/C0095C 100 V+ = 3 V 1 n V+ = 2.5 V V+ = 3 V V+ = 3 .3 V 85/C0095C 10 m -40/C0095C 25/C0095C

Vishay SiliconixNew Product Document Number: 72308 S-31310—Rev. A, 30-Jun-03 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) -30 -20 -10 -90 -20 Loss, OIRR, X Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Frequency (Hz) -10 -60 -40 -20 0 20 40 60 80 100 tON V+ = 2 V Switching Time vs. Temperature and Supply Voltage Temperature (/C0095C)

10 M 1 G 100 M1 M100 K

tON,t OFF - Switching Time (ns) tON V+ = 3 V tOFF V+ = 2 V tOFF V+ = 3 V tOFF V+ = 3.6 V -30 -40 -50 -60 -70 -80 TALK (dB) V+ = 3 V RL = 50 /C0087 LOSS OIRR XTALK VCOM - Analog Voltage (v) Q - Charge Injection (pC) Charge Injection vs. Analog Voltage V+ = 1.8 V V+ = 3 V tON V+ = 3.6 V