DG2612

DG2612 VISHAY | Alldatasheet

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Document Number: 74339 S-61509-Rev. A, 28-Aug-06 www.vishay.com Low-Voltage, Low rON, SPDT Audio Switch with Negative Swing Capability

DESCRIPTION

The DG2612/2613 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative signal swing capability. It is designed for low voltage applications. The DG2612/2613 is ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. In additional to the low on-resistance (1.0 Ω at 2.7 V), the DG2613 has a typical OFF Isolation and Crosstalk of - 67 dB and - 73 dB respectively. The DG2612/2613 is built on Vishay Siliconix’s low voltage process. Break-before-make is guaranteed. As a committed partner to the community and the envi- ronment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with 100 % matte tin device terminations, the lead (Pb)-free “-E3” suffix is being used as a designator.

FEATURES

Low Voltage Operation (1.8 V to 5.5 V)  Low On-Resistance - rON: 1.0 Ω at 2.7 V  High Bandwidth BENEFITS  Negative Signal Swing Capability  Shunt Switch to Eliminate Switching Noise  Simplified Design with Direct DC Coupling  Space Saving SC-89 Package

APPLICATIONS

 Cellular Phones  Portable Multimedia Players  PDAs and Hand-held Devices  Laptop Computers FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 2.15 mW/°C above 70 °C. DG2612 DG2613 1IN NO (Source 1) 2V+ 3GND IN GND

5 COM

4 NC (Source 2)

NO (Source1) COM NC (Source2) Pin 1 Ax x = Date/Lot Traceability Code Top View Device Marking: Dx Top View Device Marking: Ex TRUTH TABLE Logic NC NO

0 ON OFF

COMMERCIAL ORDERING INFORMATION Temp Range Package Part Number - 40 to 85 °C SC-89 (SOT -666) Lead (Pb)-free with Tape and Reel DG2612DX-T1-E3 DG2613DX-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Reference V+ to GND - 0.3 to + 6 VIN, COM, NC, NOa - 0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM pins) ± 150 mAPeak Current (Pulsed at 1 ms, 10 % duty cycle) ± 300 Storage Temperature D Suffix - 65 to 150 °C Power Dissipation (Packages)b SC-89c 172 mW RoHS COMPLIANT

www.vishay.com Document Number: 74339 S-61509-Rev. A, 28-Aug-06 Vishay Siliconix DG2612/2613 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve Tempa Limits - 40 to 85 °C Unit Minb Typ c Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance r ON V+ = 2.7 V, VCOM = - 1 V/0 V/1 V/2 V INO, INC = 10 mA Room Full 1.0 1.4 1.6 ΩrON Matchd ΔrON Room 0.1 rON Flatnessd rON Flatness Room 0.3 Shunt Switch Resistance R SH INO or INC = 10 mA, V+ = 2.7 V, DG2612 only Full 150 300 Ω Switch Off Leakage Current INO(off) INC(off) V+ = 3.3 V, VNO, VNC= 1 V/3 V, VCOM = 3 V/1 V Room Full - 2 - 100 100 nAICOM(off) Room Full - 2 - 100 100 Channel-On Leakage Current I COM(on) V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room Full - 2 - 100 100 Digital Control Input High Voltage V INH V+ = 1.8 V to 2.0 V Full 1.0 V V+ = 2.7 V to 3.6 V 1.4 V+ = 4.2 V to 5.5 V 2.0 Input Low Voltage V INL V+ = 1.8 V to 2.0 V 0.4 V+ = 2.7 V to 3.6 V 0.5 V+ = 4.2 V to 5.5 V 0.8 Input Capacitance C in Full 5 pF Input Current I INL or IINH VIN = 0 or V+ Full 1 1 µA Dynamic Characteristics Tur n-On Time t ON VNO or VNC = 1.5 V, RL = 50 Ω, CL = 35 pF Room Full 34 60 nsTurn-Off Time t OFF Room Full 10 35 Break-Before-Make Time t BBM Room 4 16 Charge Injectiond (DG2613) Q INJ CL = 1 nF , VGEN = 0 V, RGEN = 0 Ω Room 2.4 pC Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF , f = 100 kHz DG2612 Room - 61 dBCrosstalkd XTA LK Room - 67 Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF , f = 100 kHz DG2613 Room - 67 dBCrosstalkd XTA LK Room - 73 NO, NC Off Capacitanced CNO(off) CNC(off) VIN = 0 or V+, f = 1 MHz Room 36 pF Channel-On Capacitanced CON Room 95 Power Supply Power Supply Range V+ 1.8 5.5 V Power Supply Current I+ V IN = 0 or V+ 0.01 1.0 µA

Document Number: 74339 S-61509-Rev. A, 28-Aug-06 www.vishay.com Vishay Siliconix DG2612/2613 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted rON vs. VCOM and Supply Voltage Supply Current vs. Temperature Leakage Current vs. Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 V+ = 1.8 V V+ = 2.7 V V+ = 3.0 V V+ = 3.6 V V+ = 2.0 V VCOM – Analog Voltage (V) rON – On-Resistance (Ω) T = 25 °C IS = 10 mA V+ = 4.5 V V+ = 5.0 V V+ = 5.5 V 100 1000 10000 100000 - 60 - 40 - 20 0 20 40 60 80 100 Temperature ( I+ – Supply Current (pA) DG2612 VIN = 0 V V+ = 3.6 V V+ = 5.5 V 100 1000 10000 100000 - 60 - 40 - 20 0 20 40 60 80 100 V+ = 2.7 V Temperature (°C) Leakage Current (pA) ICOM(off) ICOM(on) INO(off) rON vs. Analog Voltage and Temperature Supply Current vs. Temperature Switching Time vs. Temperature and Supply Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 3 - 2 - 1 0 1 2 3 4 V+ = 2.7 V, IS = 10 mA + 85 °C + 25 °C - 40 °C VCOM – Analog Voltage (V) rON - On-Resistance (Ω) 100 1000 10000 100000 - 60 - 40 - 20 0 20 40 60 80 100 Temperature ( I+ – Supply Current (pA) DG2613 VIN = 0 V V+ = 3.6 V V+ = 5.5 V - 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) tON, tOFF, – Switching Time (ns) tOFF V+ = 3.0 V tON V+ = 3.0 V

Insertion Loss, Off-Isolation, Crosstalk vs.

100 K 1 M 10 M 100 M 1 G

Insertion Loss, Off-Isolation, Crosstalk vs. Figure 1. Switching Time

data, see http://www.vishay.com/ppg?74339. Figure 5. Channel Off/On Capacitance

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.