DG2518

DG2517 VISHAY | Alldatasheet

Document overview

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Technical content

Document Number: 74333 S-61774-Rev. A, 11-Sep-06 www.vishay.com 3 Ω, High Bandwidth, Dual SPDT Analog Switch

FEATURES

• 1.8 to 5.5 V Single Supply Operation  Low Ron: 3 Ω at 4.2 V  157 MHz, - 3 dB Bandwidth  Low Off-Isolation, - 47 dB at 10 MHz  + 1.6 V Logic Compatible BENEFITS  High Linearity  Low Power Consumption  High Bandwidth  Full Rail Signal Swing Range

APPLICATIONS

 USB/UART Signal Switching  Audio/Video Switching  Cellular Phone  Media Players  Modems  Hard Drives  PCMCIA

DESCRIPTION

The DG2517/DG2518 are low-voltage dual single-pole/dou- ble-throw monolithic CMOS analog switches. Designed to operate from 1.8 V to 5.5 V power supply, the DG2517/ DG2518 achieves a bandwidth of 157 MHz while providing low on-resistance (3 Ω), excellent on-re sistance matching (0.2 Ω) and flatness (1 Ω) over the entire signal range. The DG2517/DG2518 offers the advantage of high linearity that reduces signal distortion, making ideal for audio, video, and USB signal routing applications. Additionally, the DG2517/DG2518 are 1.6 V logic compatible within the full operation voltage range. Built on Vishay Siliconix’s proprietary sub-micron high-den- sity process, the DG2517/DG2518 brings low power con- sumption at the same time as reduces PCB spacing with the MSOP10 and DFN10 packages. As a committed partner to the community and the environ- ment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. The DFN package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free "-E4" suffix. The MSOP package uses 100 % matte Tin device termination and is represented by the lead (Pb)- free "-E3" suffix. Both the matte Tin and nickel- palladium-gold device terminations meet all JEDEC stan- dards for reflow and MSL ratings. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION COM1 NC1 Top View IN1 NO1 GND 8 DG2517 NC2 COM2 7NO2 IN2 6 COM1 NO1 Top View IN1 NC1 GND 8 DG2518 NO2 COM2 7NC2 IN2 6 TRUTH TABLE Logic NC1 and NC2 NO1 and NO2 0O N O F F 1O F F O NORDERING INFORMATION Temp Range Package Part Number - 40 to 85 °C MSOP-10 DG2517DQ-T1-E3 DG2518DQ-T1-E3 DFN-10 DG2517DN-T1-E4 DG2518DN-T1-E4 RoHS COMPLIANT

www.vishay.com Document Number: 74333 S-61774-Rev. A, 11-Sep-06 Vishay Siliconix DG2517/DG2518 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/°C above 70 °C. d. Derate 14.9 mW/°C above 70 °C. Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. V IN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Reference to GND V+ - 0.3 to + 6 VIN, COM, NC, NOa - 0.3 to (V+ + 0.3) Continuous Current (Any terminal) ± 50 mAPeak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature (D Suffix) - 65 to 150 °C Power Dissipation (Packages)b MSOP-10c 320 mWDFN-10d 1191 SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 Ve Tempa Limits - 40 to 85 °C Unit Minb Typ c Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 2.7 V, VCOM = 1.5 V INO/NC = 10 mA Room Full 3.2 4.5 5.0 ΩrON Flatness rON Flatness V+ = 2.7 V, VCOM = 1.5, 2 V INO/NC = 10 mA Room Full 1.0 1.4 rON Match Between Channels ΔrON V+ = 2.7 V, VCOM = 1.5 V INO/NC = 10 mA Room Full 0.1 0.3 0.4 Switch Off Leakage Currentf INO(off), INC(off) V+ = 3.6 V, VNO, VNC = 0.3 V/ 3 V VCOM = 3 V/0.3 V Room Full - 1 - 10 nAICOM(off) Room Full - 1 - 10 Channel-On Leakage Currentf ICOM(on) V+ = 3.6 V, VNO, VNC = VCOM = 0.3 V/3 V Room Full - 1 - 10 Digital Control Input High Voltaged VINH Full 1.4 VInput Low Voltage VINL Full 0.5 Input Capacitance Cin Full 4 pF Input Current IINL or IINH Full 1 1 µA Dynamic Characteristics Tur n-On Time tON V+ = 2.7 V, VNO or VNC = 1.5 V RL = 300 Ω, CL = 35 pF Room Full 15 30 nsTurn-Off Time tOFF Room Full 10 25 Break-Before-Make Time td VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF Full 1 Charge Injectiond QINJ CL = 1 nF , VGEN = 1.5 V, RGEN = 0 Ω Room 1 pC - 3 dB Bandwidth BW 0 dBm, CL = 5 pF , RL = 50 Ω Room 157 MHz Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF f = 1 MHz Room - 67 dBf = 10 MHz Room - 47 Crosstalkd XTALK RL = 50 Ω, CL = 5 pF f = 1 MHz Room - 67 f = 10 MHz Room - 47 NO, NC Off Capacitanced CNO(off) VIN = 0 or V+, f = 1 MHz Room 8 pFCNC(off) Room 8 Channel-On Capacitanced CNO(on) Room 35 CNC(on) Room 35 Power Supply Power Supply Current I+ VIN = 0 or V+ Full 0.01 1.0 µA

Document Number: 74333 S-61774-Rev. A, 11-Sep-06 www.vishay.com Vishay Siliconix DG2517/DG2518 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, ± 10 %, VIN = 0.8 or 2.0 Ve Tempa Limits - 40 to 85 °C Unit Minb Typ c Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA Room Full 34 . 0 4.3 ΩrON Flatness rON Flatness INO/NC = 10 mA Room Full 1.1 1.4 1.6 rON Match Between Channels ΔrON V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA Room Full 0.1 0.3 0.4 Switch Off Leakage Current INO(off), INC(off) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V Room Full - 1 - 10 nAICOM(off) Room Full - 1 - 10 Channel-On Leakage Current ICOM(on) V+ = 5.5 V, VCOM = VNO, VNC = 1 V/4.5 V Room Full - 1 - 10 Digital Control Input High Voltaged VINH Full 2.0 V Input Low Voltage VINL Full 0.8 Input Capacitance Cin Full 4 pF Input Current IINL or IINH VIN = 0 V or V+ Full 1 1 µA Dynamic Characteristics Tur n-On Time tON V+ = 4.2 V, VNO or VNC = 3 V RL = 300 Ω, CL = 35 pF Room Full 12 25 nsTurn-Off Time tOFF Room Full 82 0 Break-Before-Make Time td VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF Full 1 Charge Injectiond QINJ CL = 1 nF , VGEN = 2.5 V, RGEN = 0 Ω Room 2 pC - 3 dB Bandwidth BW 0 dBm, CL = 5 pF , RL = 50 Ω Room 157 MHz Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF f = 1 MHz Room - 67 dBf = 10 MHz Room - 47 Crosstalkd XTALK RL = 50 Ω, CL = 5 pF f = 1 MHz Room - 67 f = 10 MHz Room - 47 Source-Off Capacitanced CNO(off) VIN = 0 or V+, f = 1 MHz Room 8 pF CNC(off) Room 8 Channel-On Capacitanced CNO(on) Room 35 CNC(on) Room 35 Power Supply Power Supply Range V+ 1.8 5.5 V Power Supply Current I+ VIN = 0 or V+ Full 0.01 1.0 µA

www.vishay.com Document Number: 74333 S-61774-Rev. A, 11-Sep-06 Vishay Siliconix DG2517/DG2518 TYPICAL CHARACTERISTICS 25 °C, unless noted rON vs. VCOM and Supply Voltage Supply Current vs. Temperature Leakage Current vs. Temperature 012 3 45 VCOM - Analog Voltage (V) V+ = 2.7 V V+ = 4.2 V V+ = 1.8 V T = 25 °C INO/NC = 10 mA (Ω) ecnatsiseR-nO -r NO - 60 - 40 - 20 0 20 40 60 80 100 1000 10000 Temperature (°C) V+ = 5 V VIN = 0 V 100 )Ap( tnerruC ylppuS - +I - 40 - 15 10 35 60 85 1000 Temperature (°C) 100 )Ap( tnerruC egakaeL INO(off), INC(off) ICOM(off) ICOM(on) rON vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency Leakage vs. Analog Voltage 012 3 45 25 °C VCOM - Analog Voltage (V) 25 °C (Ω) ecnatsiseR-nO -r NO V+ = 2.7 V - 40 °C V+ = 4.2 V - 40 °C 85 °C 85 °C 10 10K 100K 10M 10 mA 1 mA 10 µA 1 µA 10 nA Input Switching Frequency (Hz) )A( tnerruC ylppuS - +I 1 nA 100 nA 100 µA V+ = 5.5 V 100 1K 1M - 80 - 60 - 40 - 20 VCOM, VNO, VNC - Analog Voltage (V) )Ap( tnerruC egakaeL V+ = 5.5 V INC(off), INO(off) ICOM(off) ICOM(on)

Figure 1. Switching Time

Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1 Notice Specifications of the products displayed herein are subjec t to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.