DG243 ETC1 | Alldatasheet

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Silicon 7 , EF E000 DG243 __CMOS Analoa Switch _ -— Cc Oe FEATURES BENEFITS . APPLICATIONS . 4 © PLUS-40 Process © Reduced Power Supply © Programmable Gain - + @ Make-Betore-Break Considerations Amplifiers : ; Operation © Reduced Switching Noise ® Analog Multiplexing © Full Rall-to-Rall Analog © Reduced Need for Buffers © Servo Control Systems Signa! Range © Pull-Up Resistors Not : © True TTL Compatibility “Requiréd” ene DESCRIPTION ; ~ “323 : The DG243 is a monolithic dual SPOT analog switch _—_with @ high breakdown voltage rating'of 40.V, An.» communication, Instrumentation, and... process Each switch conducts equally well In both-directions control systems. Featuring make-befére-break | when ON, ind ‘blocks. up to.30 Volts peak-to-peak’ > - : action, the DG243 can be used ih closed loop —- when OFF. ON resistance Is fairly flat Over the full =~ 5 systems to switch gain or ‘bandwicth-iietivprks . 416 V analog signal range. - ; coe without opening the loop. rete "Packaging for thie device irfoludes @ 16-pin Cerbip.~ » and plastic options. Performance grades ‘inolude’: ° The DG243 Is designed on the Siliconix PLUS-40 .. military, A suffix (~85 to 125°C) and commeralal, Cs: a CMOS process to combine low power dissipation suffix (0 to 70°C) temperature ranges. . a 5 | PIN CONFIGURATION __ FUNCTIONAL BLOCK DIAGRAM ae S81 00-7 op Dual-In-Line Package 83 o——___1-fa__0p, A Ny —)>- Lotte °1 Gy le L

29 Gal fa v- ai 88

83 fa FS] ano oo 840-00, Png G % Cal fl ve ** We —_ > c no Gi fio] we 7 soe ~ 2 Gl ja} 8, . ran thee Two SPST Switches per Package* ; ‘Top View . . Ordor Numbers: . Truth Table : 1 CerDIP: DG243AK, DG243AK/889, [soae [aw Fave | as : Plaatio: DG243CK, Da24sOJ | * i “Dep Oe i . Logie *0" < 0.8V ° Logle "1" 5 20 : *Switchos Shown for Loglo *1* Input

ABSOLUTE MAXIMUM RATINGS .2 0°! 5 T-51-11 ~ Valente seenme eeeieerteesersertimemrecss iar MA4V) WA COE AREAS GND vissieeessseeerediereetepereetaeeestins 26V (0 GUID «+201 eeerae Ql 0 7080 teiseerseseescceerecees SOMA, whichever ooours first 16-Pin COFDIP sess eeessseeeceeneeeee ese B00,MW Continuous Current, $ Of D s.sevsseseseesverers SOMA © Allende soldered o welded to PC board:.”- ‘ Poak Current, $ or D . Dorato 12 mW/*C above 75°C. * ELECTRICAL CHARACTERISTICS * : i md Tost Conditions == |__tiairs : Untess Otherwise Specified: |1=25°C A ~e veeiey 2=126,05,70°C | surrix | SUFFIX. S| |S GND = 0 7 5 7 vanuren —_lewoil $829 Eee eS BR Rok Bess ae ee nee get ERS) eo eee mi eee ee eee eee es eee ee an Cad ieee re ce Drain-Source Vo = + 10V 50° ° ON Rosistance DS(on) 1g = 10 mA 7 | % Vee 14 Bin ‘Source OFF Vo=~14V 100 Coakage Current Vex -14V Vp= 14V Ve" 14 Drain OFF WOSRteY . Ceakage Current nA Vge 14V : Vos -14V Ve "Vp = 14V fy , Drain ON [verve fate [fal [a] Leakage Current 7 “5 Vervo st |: [far [ape] . aie one oor oe eee eee ee ee NEU = rr r—“—ie Input Qurront with 5 Input Voltage HIGH Voy = 2.0 V Input Curront with a Input Cura

ELECTRICAL CHARACTERISTICS * Ls : Test Conditions [irs] po Unless Otherwise Specitied: [as°o A c 2 Ves +Hi5V }2=125,85,70°C | suFFIX ‘SUFFIX : : Va = =15 V 3=-65,0°C j-85 to 125°C] _0 to 70°C GND = 0 a d 7 ranaweren _laviazou wMctv. rem] rve*[ want]vase| vaneax’| onic | COVNAMIE En ee ee ee CPs DYNAMIC Gg. -°.-So e = —“—i<“CisisOSCS—*sSsS—CO See Switching Time Test Circuit a hmedaie | tom | : ! [se | [oom] | | OL = 1000 PF, Veon = 0V Charge Injection |e | Rog Of baat Pele] [TT [| Vp=Vg=0V Drain-OFF Capacitance | Covorry ve. Vy 50V f=1MHz ‘Channel ON Capacitance Coron cf “ : - A Ss) ttt | | iat ee [| | EBanz Crosstalk Vee . 50m eters oeeegte ee stg ns eee oe MA Daf ere Te ee Se OMe ee PBUBRLY 6:9 Po ee ee Se Pee Sea _ S emma ican : : ERRORS Ca cee P| ‘ | + | | j-ve[ [ef | 5 All Channels ON or OFF aA beak Ls fm [fie] [oo] omeneehames [ia | [+ | 0 [seo] [0] | 2 NOTES: . 8. Refer to PROCESS OPTION FLOWCHART for additional information. be he Gigebralo ponvention whereby the most negative value Is a minimum ‘and the most positive a maximum, is used In gebralo 0° j J . 2. Guaranteed by design, not subject Saprpcuation. tost, ? d. Typical values are for DESIGN AID ONLY. not guaranteed nor subject to production testing. ©. Vin = Input voltage to perform proper funotion. For Loglo *1* - Vin = 2.0 V . For Loglo *0* - Vi. = 0.8 V

. Pad Funetlon 13 12 —_— . No. 14) Bea pz aa TA | 11 1 Draint 1s| a Bl fa" Aa | 10 3 Drains Gt rd me 4 Source 3 16| (ZZ)Bee ame lace merce imcetmAlZA | & — Source 4 Soles At ko 8 Drain4 Se a Oe Beery ree | 60 mite 8 Drain? bee eee By Sie ae cy 11 V+ (Substrate) 3 | eee eee 13. Gho- Ea 4 6 6 45 Input 1 rons. 18 Source 1 "20x aed I IoMKC or . a 8 Capacttors 83 N-channel enhancement MOSFET® . 6 Resistors . 9 Diodes $1 P-channel enhancement MOSFET SWITCHING TIME TEST CIRCUIT = ; i pe Switch output waveform shown for Vs = constant with logic input waveform as shown. Note that Vs may be + or ~ as per switching time test circuit, Vo Is the steady state output with switch ON. Feedthrough via‘gate capacitance may result in spikes at leading and tralling edge of output waveform. . +5V HBV oo oe 3.0V Tv. wf cai! WITCH OV tp <20 ne SWITCH switc! teaie tr <20 ne INPUT Sy a OUTPUT ov Ve=t10V © oon ov our SWITCH vo. INy 1 CL Ri INPUT otal Loaic p—o-+-q fot 36 pF 1 ke, fc SWITCH . 0.9 INPUT, . OUTPUT OV y @ —— = . i" = 5 coal Sore| 0 , ©. (REPEAT TEST ac ov -18V ORIN) == * NOTE: Loglo Input waveform ie inverted for Re oe : it Vour «Vex—et s Ase a a Be sets de eRe EY CHARGE INJECTION TEST CIRCUIT - : 2 AVo R, +4V0 ru 9 oVo Vo _/ X Voen == A on ; al [16,00 PF INx OFF\\ ON/OFF a ©) 4SVo = measured voltage error due to charge injeatlon. . = The charge Injection in coulombs Is AQ = C, XAVo.