DG211B_11 VISHAY | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 13

Technical content

DG211B, DG212B Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 www.vishay.com Improved Quad CMOS Analog Switches

FEATURES

  • ± 22 V supply voltage rating  TTL and CMOS compatible logic  Low on-resistance - R DS(on): 50   Low leakage - I D(on): 20 pA  Single supply operation possible  Extended temperature range  Fast switching - t ON: 120 ns  Low charge injection - Q: 1 pC BENEFITS Wide analog signal range  Simple logic interface  Higher accuracy  Minimum transients  Reduced power consumption  Superior to DG211, DG212  Space savings (TSSOP)

APPLICATIONS

 Industrial instrumentation  Test equipment  Communications systems  Disk drives  Computer peripherals  Portable instruments  Sample-and-hold circuits

DESCRIPTION

The DG211B, DG212B analog switches are highly improved versions of the industry-s tandard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transie nts. The DG211B and DG212B can handle up to ± 22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG211B is a normally closed switch and the DG212B is a normally open switch. (see Truth Table.) FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Logic “0” 0.8 V Logic “1” 2.4 V * Pb containing terminations are not RoHS compliant, exemptions may apply. IN1 IN2 D1 D2 S1 S2 V- V+ GND V L S4 S3 D4 D3 IN4 IN3 Top View DG211B Dual-In-Line, SOIC and TSSOP TRUTH TABLE Logic DG211B DG212B

0 ON OFF

www.vishay.com Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 Vishay Siliconix DG211B, DG212B Notes: a. Signals on S X, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 75 °C. d. Derate 7.6 mW/°C above 75 °C. SCHEMATIC DIAGRAM (Typical Channel)

ORDERING INFORMATION

Temp. Range Package Standard Part Number Lead (Pb)-free Part Number - 40 °C to 85 °C 16-Pin Plastic DIP DG211BDJ DG211BDJ-E3 DG212BDJ DG212BDJ-E3 16-Pin Narrow SOIC DG211BDY DG211BDY -T1 DG211BDY -E3 DG211BDY -T1-E3 DG212BDY DG212BDY -T1 DG212BDY -E3 DG212BDY -T1-E3 16-Pin TSSOP DG211BDQ DG211BDQ-T1 DG211BDQ-E3 DG211BDQ-T1-E3 DG212BDQ DG212BDQ-T1 DG212BDQ-E3 DG212BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit Unit Voltages Referenced, V+ to V- 44 VGND 25 Digital Inputsa, VS, VD or 30 mA, whichever occurs first Current (Any terminal) 30 mAPeak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature - 65 to 125 °C Power Dissipation (Package) b 16-Pin Plastic DIPc 470 mW 16-Pin Narrow SOIC and TSSOPd 640 Figure 1. DX SX INX Level Shift/ GND Drive VL

Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 www.vishay.com Vishay Siliconix DG211B, DG212B SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.a D Suffix - 40 °C to 85 °C Unit Min.b Typ. c Max.b Analog Switch Analog Signal Range d VANALOG Full - 15 15 V Drain-Source On-Resistance R DS(on) VD = ± 10 V, IS = 1 mA Room Full 45 85 100  RDS(on) Match RDS(on) Room 2 Source Off Leakage Current I S(off) VS = ± 14 V, VD = ± 14 V Room Full - 0.5 - 5 ± 0.01 0.5 nADrain Off Leakage Current I D(off) VD = ± 14 V, VS = ± 14 V Room Full - 0.5 - 5 ± 0.01 0.5 Drain On Leakage Current I D(on) VS = VD = ± 14 V Room Full - 0.5 - 10 ± 0.02 0.5 Digital Control Input Voltage High V INH Full 2.4 VInput Voltage Low V INL Full 0.8 Input Current I INH or IINL VINH or VINL Full - 1 1 µA Input Capacitance C IN Room 5 pF Dynamic Characteristics Tur n-On Time t ON VS = 10 V see figure 2 Room 300 nsTurn-Off Time t OFF Room 200 Charge Injection Q C L = 1000 pF , Vgen = 0 V, Rgen = 0  Room 1 pC Source-Off Capacitance C S(off) VS = 0 V, f = 1 MHz Room 5 pFDrain-Off Capacitance C D(off) Room 5 Channel-On Capacitance C D(on) VD = VS = 0 V, f = 1 MHz Room 16 Off Isolation OIRR CL = 15 pF , RL = 50  VS = 1 VRMS, f = 100 kHz Room 90 dBChannel-to-Channel Crosstalk X TALK Room 95 Power Supply Positive Supply Current I+ V IN = 0 or 5 V Room Full µANegative Supply Current I- Room Full - 10 - 50 Logic Supply Current I L Room Full Power Supply Range for Continuous Operation V OP Full ± 4.5 ± 22 V

www.vishay.com Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 Vishay Siliconix DG211B, DG212B Notes: a. Room = 25 °C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. V IN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) SPECIFICATIONS (for Single Supply) Parameter Symbol Test Conditions Unless Otherwise Specified VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.a D Suffix - 40 °C to 85 °C Unit Min.b Typ. c Max.b Analog Switch Analog Signal Range d VANALOG Full 0 12 V Drain-Source On-Resistance R DS(on) VD = 3 V, 8 V, IS = 1 mA Room Full 90 160 200  Dynamic Characteristics Tur n-On Time t ON VS = 8 V see figure 1 Room 300 nsTur n-Off Time t OFF Room 200 Charge Injection Q C L = 1 nF , Vgen = 6 V, Rgen = 0  Room 4 pC Power Supply Positive Supply Current I+ V IN = 0 or 5 V Room Full µANegative Supply Current I- Room Full - 10 - 50 Logic Supply Current I L Room Full Power Supply Range for Continuous Operation V OP Full + 4.5 + 25 V RDS(on) vs. VD and Power Supply Voltages - 20 - 16 - 12 - 8 - 4 0 4 8 1 2 1 6 2 0 100 11 0 ± 5 V V D - Drain Voltage (V) ± 10 V ± 15 V ± 20 V 30 RDS(on) - Drain-Source On-Resistance (Ω) RDS(on) vs. VD and Temperature 85 °C - 15 - 10 - 5 0 5 10 15 V D - Drain V oltage (V) 125 °C 25 °C - 55 °C V+ = 15 V V- = - 15 V 100 RDS(on) - Drain-Source On-Resistance (Ω)

Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 www.vishay.com Vishay Siliconix DG211B, DG212B TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) RDS(on) vs. VD and Single Power Supply Voltages Leakage Current vs. Temperature 02468 1 0 1 2 1 4 16 100 125 150 175 200 225 V D - Drain V oltage (V) V+ = 5 V 7 V 10 V 12 V 15 V 250 RDS(on) - Drain-Source On-Resistance (Ω) - 55 25 45 5 - 15 65 1 nA 100 pA 10 pA - 35 1 pA 85 105 125 V+ = 15 V V- = - 15 V V S, V D = ± 14 V I S( of f) , I D(of f) I S, I D - Current Temperature (°C) Leakage Currents vs. Analog Voltage QS, QD - Charge Injection vs. Analog Voltage - 20 - 15 - 10 - 5 0 5 10 15 20 - 20 - 40 IS, ID - Current (pA) I S( of f) , I D(of f) I D(on) V ANALO G - Analog V oltage (V) V+ = 22 V V- = - 22 V T A = 25 °C 30 - 10 - 30 - 15 - 10 - 5 0 5 10 15 - 10 - 20 - 30 V+ = 15 V V- = - 15 V V+ = 12 V V- = 0 V Q - Charge (pC) VANALOG - Analog Voltage (V) Off Isolation vs. Frequency OIRR (dB) 10K 100K 1M 10M 100 11 0 120 f - Frequency (Hz) V+ = + 15 V V- = - 15 V R L = 50 Ω

Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 www.vishay.com Vishay Siliconix DG211B, DG212B Figure 6. Sample-and-Hold

200 W 5 MΩ

Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency

www.vishay.com Document Number: 70040 S11-0179-Rev. J, 07-Feb-11 Vishay Siliconix DG211B, DG212B Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locatio ns. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70040. Figure 8. A Precision Amplifier with Digitally Programable Input and Gains

0.101 mm 0.004 IN E H C D e B A1 L /C0300 4312 8 756 131416 15 9 1012 11

Package Information

Document Number: 71194 02-Jul-01 www.vishay.com /C0083/C0079/C0073/C0067/C0032/C0040/C0078/C0065/C0082/C0082/C0079/C0087/C0041/C0058/C0032/C0032/C0032/C0049/C0054/C0262/C0076/C0069/C0065/C0068 JEDEC Part Number: MS-012 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 1.35 1.75 0.053 0.069 A 1 0.10 0.20 0.004 0.008 B 0.38 0.51 0.015 0.020 C 0.18 0.23 0.007 0.009 D 9.80 10.00 0.385 0.393 E 3.80 4.00 0.149 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 L 0.50 0.93 0.020 0.037 /C03000/C0095 8/C0095 0/C0095 8/C0095 ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300

A LA1 e1 BB1 S C eA D 15° MAX 1 234567 8 16 15 14 13 12 11 10 9 Document Number: 71261 06-Jul-01 www.vishay.com /C0080/C0068/C0073/C0080/C0058/C0032/C0032/C0049/C0054/C0262/C0076/C0069/C0065/C0068/C0032 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 3.81 5.08 0.150 0.200 A 1 0.38 1.27 0.015 0.050 B 0.38 0.51 0.015 0.020 B 1 0.89 1.65 0.035 0.065 C 0.20 0.30 0.008 0.012 D 18.93 21.33 0.745 0.840 E 7.62 8.26 0.300 0.325 E1 5.59 7.11 0.220 0.280 e1 2.29 2.79 0.090 0.110 eA 7.37 7.87 0.290 0.310 L 2.79 3.81 0.110 0.150 Q 1 1.27 2.03 0.050 0.080 S 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482

Document Number: 74417 23-Oct-06 www.vishay.com Symbols DIMENSIONS IN MILLIMETERS Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 B 0.22 0.28 0.38 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e- 0 . 6 5 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y-- 0 . 1 0 θ10 °3 °6 ° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 TSSOP: 16-LEAD

www.vishay.com Document Number: 72608 APPLICATION NOTE RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) Return to Index Return to Index

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1 Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA AR E SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of pro ducts for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in gene ric applications. Such statements are not binding statements about the suitability of products for a partic ular application. It is the customer’s responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. Parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s term s and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product co uld result in person al injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.