DG211B

DG211B VISHAY | Alldatasheet

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Dual-In-Line, SOIC and TSSOP DG211B/212B Vishay Siliconix Document Number: 70040 S-00788—Rev. H, 24-Apr-00 www.vishay.com FaxBack 408-970-5600 4-1 Improved Quad CMOS Analog Switches 22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance—rDS(on): 50 Low Leakage—ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching—tON: 120 ns Low Charge Injection—Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG211/212 Space Savings (TSSOP) Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits The DG211B/212B analog switches are highly improved versions of the industry-standard DG211/212. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle up to 22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG211B is a normally closed switch and the DG212B is a normally open switch. (See Truth Table.) Logic DG211B DG212B ON OFF OFF ON Logic “0” 0.8 V Logic “1” 2.4 V

www.vishay.com FaxBack 408-970-5600 4-2 Document Number: 70040 S-00788—Rev. H, 24-Apr-00 Temp Range Package Part Number 85 C 16-Pin Plastic DIP DG211BDJ 85 C 16-Pin Plastic DIP DG212BDJ –40 to 85C 16-Pin Narrow SOIC DG211BDY –40 to 85C 16-Pin Narrow SOIC DG212BDY 16-Pin TSSOP DG211BDQ 16-Pin TSSOP DG212BDQ Voltages Referenced to V– 44 V GND 25 V Digital Inputsa VS, VD (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) 100 mA Storage Temperature –65 to 125C Power Dissipation (Package)b 16-Pin Plastic DIPc 470 mW 16-Pin Narrow SOIC and TSSOPd 640 mW Notes: Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. All leads welded or soldered to PC Board. Derate 6.5 mW/C above 75C Derate 7.6 mW/C above 75C FIGURE 1. DX SX INX Level Shift/ GND Drive VL

Document Number: 70040 S-00788—Rev. H, 24-Apr-00 www.vishay.com FaxBack 408-970-5600 4-3 Test Conditions Unless Otherwise Specified D Suffix –40 to 85C Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb Typc Maxb Unit Analog Switch Analog Signal Ranged VANALOG Full –15 V Drain-Source On-Resistance rDS(on) VD = 10 V, IS = 1 mA Room Full rDS(on) Match rDS(on) D , S Room Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full –0.5 0.01 0.5 A Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full –0.5 0.01 0.5 nA Drain On Leakage Current ID(on) VS = VD = 14 V Room Full –0.5 –10 0.02 0.5 Digital Control Input Voltage High VINH Full 2.4 V Input Voltage Low VINL Full 0.8 V Input Current IINH or IINL VINH or VINL Full A Input Capacitance CIN Room pF Dynamic Characteristics Turn-On Time tON VS =10 V S Fi Room 300 ns Turn-Off Time tOFF S See Figure 2 Room 200 ns Charge Injection Q CL = 1000 pF, Vg= 0 V, Rg = 0 Room pC Source-Off Capacitance CS(off) VS = 0 V, f = 1 MHz Room F Drain-Off Capacitance CD(off) VS = 0 V, f = 1 MHz Room pF Channel On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room Off Isolation OIRR CL = 15 pF, RL = 50 V 1 V f 100 kH Room dB Channel-to-Channel Crosstalk XTALK L p , L VS = 1 VRMS, f = 100 kHz Room dB Power Supply Positive Supply Current VIN = 0 or 5 V Room Full A Negative Supply Current VIN = 0 or 5 V Room Full –10 –50 A Logic Supply Current IL Room Full Power Supply Range for Continuous Operation VOP Full 4.5 V

www.vishay.com FaxBack 408-970-5600 4-4 Document Number: 70040 S-00788—Rev. H, 24-Apr-00 Test Conditions Unless Otherwise Specified D Suffix –40 to 85C Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb Typc Maxb Unit Analog Switch Analog Signal Ranged VANALOG Full V Drain-Source On-Resistance rDS(on) VD = 3 V, 8 V, IS = 1 mA Room Full 160 200 Dynamic Characteristics Turn-On Time tON VS = 8 V S Fi Room 300 ns Turn-Off Time tOFF S See Figure 2 Room 200 ns Charge Injection Q CL = 1 nF, Vgen= 6 V, Rgen = 0 Room pC Power Supply Positive Supply Current VIN = 0 or 5 V Room Full A Negative Supply Current VIN = 0 or 5 V Room Full –10 –50 A Logic Supply Current IL Room Full Power Supply Range for Continuous Operation VOP Full 4.5 V Notes: Room = 25C, Full = as determined by the operating temperature suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Guaranteed by design, not subject to production test. VIN = input voltage to perform proper function. 85C –20 –16 –12 100 110 –15 –10 5 V rDS(on) vs. VD and Power Supply Voltages VD – Drain Voltage (V) 10 V 15 V 20 V rDS(on) vs. VD and Temperature VD – Drain Voltage (V) 125C 25C –55C V+ = 15 V V– = –15 V 100 rDS(on)– Drain-Source On-Resistance ( rDS(on)– Drain-Source On-Resistance (

Document Number: 70040 S-00788—Rev. H, 24-Apr-00 www.vishay.com FaxBack 408-970-5600 4-5 100 125 150 175 200 225 rDS(on) vs. VD and Single Power Supply Voltages VD – Drain Voltage (V) V+ = 5 V 7 V 10 V 12 V 15 V 250 –20 –15 –10 –20 –40 Leakage Currents vs. Analog Voltage I S,I D – Current (pA) IS(off), ID(off) ID(on) –55 –15 1 nA 100 pA 10 pA –35 1 pA 105 125 V+ = 15 V V– = –15 V VS, VD = 14 V IS(off), ID(off) I S,I D – Current Temperature (C) Leakage Current vs. Temperature rDS(on)– Drain-Source On-Resistance ( VANALOG – Analog Voltage (V) V+ = 22 V V– = –22 V TA = 25C –10 –30 –15 –10 –10 –20 –30 V+ = 15 V V– = –15 V V+ = 12 V V– = 0 V Q – Charge (pC) QS, QD – Charge Injection vs. Analog Voltage VANALOG – Analog Voltage (V) OIRR (dB) 10 k 100 k 1 M 10 M 100 110 120 f – Frequency (Hz) Off Isolation vs. Frequency V+ = +15 V V– = –15 V RL = 50

www.vishay.com FaxBack 408-970-5600 4-8 Document Number: 70040 S-00788—Rev. H, 24-Apr-00 FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains Gain = Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) –15 V +15 V –15 V GND DG419 30 pF +15 V +15 V –15 V DG212B Logic High = Switch On LM101A RF + RG RG VIN1 VIN2 CH RF1 18 k RF2 9.9 k RF3 100 k RG3 100 RG2 100 RG1 2 k GND +5 V VL