DG2017_V01 VISHAY | Alldatasheet
Document overview
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Technical content
Document Number: 72228 S13-1286-Rev. C, 27-May-13 www.vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Low-Voltage, Low RON, Dual DPDT Analog Switch
DESCRIPTION
The DG2017 is a dual DPDT (double-pole/double-throw), optimized for high performance analog switching, and specifically designed to benefit portable audio applications. One pair of double-throw switches is sub 1 for low impedance speaker performance while the second pair of double-throw switches is suitable for microphone applications. With the DPDT configuration, the DG2017 provides the flexibility for stereo-single-end or differential BTL output structures with a fully integrated differential microphone switching solution. The DG2017 is an integrated monolithic device in a QFN-16 (4 mm x 4 mm) package that provides a space saving solution over the use of multiple single SPDT devices as well as providing the advantage of on-resistance flatness and matching that single SPDT devices cannot offer. The DG2017 provides low charge injection (2 pC), fast switching time (t ON and t OFF less than 100 ns), excellent Off-Isolation and Crosstalk (- 70 dB at 100 kHz). During operation, continuous current th rough any or all switches is rated at ± 200 mA, ideal for portable audio applications. Built on Vishay Siliconix’s low voltage CMOS process, the DG2017 contains an epitaxial layer that prevents latchup. Break-before-make is guaranteed. When on, each switch conducts equally well in both directions, and block up to the power supply level when off.
FEATURES
Low voltage operation (2 V to 5.5 V) Low on-resistance at 2.7 V - R ON: SW1, SW2 - 3.2 SW3, SW4 - 0.64 Fast switching: t ON = 46 ns tOFF = 21 ns QFN-16 (4 mm x 4 mm) package
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Space saving solution Low power consumption Guaranteed low voltage operation Low voltage logic compatible
APPLICATIONS
Integrated Speaker Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION IN1, IN2 NO4 COM2 NO2 NC3 IN3, IN4 NC1 COM41 56 8 16 15 14 13 NC2 GND NO3 COM3 COM1 NO1 V+ NC4 Top View QFN-16 (4 x 4) TRUTH TABLE Logic NC1, 2, 3 and 4 NO1, 2, 3 and 4 0O N O F F 1O F F O N
ORDERING INFORMATION
Temp Range Package Part Number - 40 °C to 85 °C 16-pin QFN (4 x 4 mm) (Variation 1) DG2017DN-T1-E4
www.vishay.com Document Number: 72228 S13-1286-Rev. C, 27-May-13 Vishay Siliconix DG2017 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 23.5 mW/°C above 70 °C. d. Manual soldering with iron is not recommended for leadless com ponents. The QFN is a leadless package. The end of the lead te rminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit Unit Reference V+ to GND - 0.3 to + 6 V IN, COM, NC, NOa - 0.3 to (V+ + 0.3) Current (Any terminal except NO, NC or COM) 30 mAContinuous Current (NO, NC, or COM) ± 200 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 300 Storage Temperature (D Suffix) - 65 to 150 Package Solder Reflow Conditions d 16-pin QFN (4 mm x 4 mm) 240 Power Dissipation (Packages)b QFN-16 (4 mm x 4 mm) 1880 mW SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 1.6 Ve Temp.a Limits - 40 °C to 85 °C Unit Min.b Typ.c Max.b Analog Switch Analog Signal Range d VNO, VNC VCOM Full 0 V+ V DC Characteristics On-Resistance R ON (SW1, SW2) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA Room Full 3.2 3.7 4.3 R ON (SW3, SW4) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA Room Full 0.67 1.1 1.2 R ON Flatnessd RON (SW1, SW2) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA Room Full 1.4 2 RON (SW3, SW4) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA Room Full 0.12 0.3 RON Matchd RON (SW1, SW2) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA Room Full 0.3 RON (SW3, SW4) V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA Room Full 0.3 Switch Off Leakage Current I NO(off) INC(off) V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 0.3 V/3 V Room Full - 0.5 0.5 nAICOM(off) Room Full - 0.5 0.5 Channel-On Leakage Current I COM(on) V+ = 3.3 V, VNO = VNC, VCOM = 0.3 V/3 V Room Full - 0.5 0.5 Digital Control Input High Voltage V INH Full 1.6 V Input Low Voltage VINL Full 0.4 Input Capacitance Cin Full 6 pF Input Current IINL or IINH VIN = 0 V or V+ Full - 1 1 µA
Document Number: 72228 S13-1286-Rev. C, 27-May-13 www.vishay.com Vishay Siliconix DG2017 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Room = 25 °C, full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 1.6 Ve Temp.a Limits - 40 °C to 85 °C Unit Min.b Typ.c Max.b Dynamic Characteristics Tur n-On Time t ON (SW1, SW2) VNO or VNC = 2 V, RL = 300 , CL = 35 pF (fig. 1, 2) Room Full 62 85 ns tON (SW3, SW4) Room Full 46 74 Turn-Off Time t ON (SW1, SW2) Room Full 12 35 t ON (SW3, SW4) Room Full 21 46 Break-Before-Make Time t d (SW1, SW2) Full 5 45 td (SW3, SW4) Full 5 26 Charge Injectiond QINJ (SW1, SW2) CL = 1 nF , VGEN = 0 V, RGEN = 0 (fig. 3) Room pCQINJ (SW3, SW4) 1 Off-Isolationd OIRR (SW1, SW2) RL = 50 , CL = 5 pF , f = 1 MHz (fig. 4) Room - 68 dB OIRR (SW3, SW4) - 51 Crosstalkd XTALK (SW1, SW2) - 69 XTALK (SW3, SW4) - 51 NO, NC Off Capacitanced COFF (SW1, SW2) VIN = 0 V or V+, f = 1 MHz Room pF COFF (SW3, SW4) 43 Channel-On Capacitanced CON (SW1, SW2) 86 CON (SW3, SW4) 283 Power Supply Power Supply Range V+ 2 5.5 V Power Supply Current I+ V OE = 0 V or V+ 1µ A
www.vishay.com Document Number: 72228 S13-1286-Rev. C, 27-May-13 Vishay Siliconix DG2017 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) RON vs. VCOM and Single Supply Voltage RON vs. Analog Voltage and Temperature Supply Current vs. Temperature 0.00 1.00 2.00 3.00 4.00 5.00 6.00 012345 VCOM - Analog Voltage (V) - On-Resistance (Ω)RON T = 25 °C SW1 & SW2 IS = 10 mA V+ = 5.0 V V+ = 3.3 V V+ = 2.7 V V+ = 2.3 V 0.00 1.00 2.00 3.00 4.00 5.00 6.00 012345 VCOM - Analog Voltage (V) V+ = 5.0 V V+ = 2.7 V 85 °C 25 °C - 40 °C 85 °C 25 °C - 40 °C SW1 and SW2 IS = 10 mA - On-Resistance (Ω)RON - 60 - 40 - 20 0 20 40 60 80 100 10 000 T emperature (°C) 100 1000I+ - Supply Current (nA) V+ = 5.0 V V IN = 0 V V+ = 3.0 V V IN = 0 V RON vs. VCOM and Single Supply Voltage RON vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency 0.000 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 012345 VCOM - Analog Voltage (V) - On-Resistance (Ω)RON T = 25 °C SW3 & SW4 V+ = 5.0 V, IS = 100 mA V+ = 3.3 V , IS = 100 mA V+ = 2.7 V, IS = 100 mA V+ = 2.3 V, IS = 50 mA 0.000 0.200 0.400 0.600 0.800 1.000 1.200 1.400 012345 VCOM - Analog Voltage (V) SW3 and SW4 V+ = 5.0 V 85 °C 25 °C - 40 °C V+ = 2.7 V 85 °C 25 °C - 40 °C IS = 100 mA - On-Resistance (Ω)RON 10 10 K 100 K 10 M100 1 K 1 M 10 mA 1 mA 100 µA 10 µA 1 µA 10 nA 100 nA Input Switching Frequency (Hz) I+ - Supply Current (A) V+ = 3 V 100 nA 1 nA
Document Number: 72228 S13-1286-Rev. C, 27-May-13 www.vishay.com Vishay Siliconix DG2017 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Leakage Current vs. Temperature Switching Time vs. Temperature Insertion Loss, Off-Isolation Crosstalk vs. Frequency - 60 - 40 - 20 0 20 40 60 80 100 1000 Temperature (°C) V+ = 5.0 V 100 ICOM(on) ICOM(off) Leakage Current (pA) INO(off), INC(off) 100 120 140 160 - 60 - 40 - 20 0 20 40 60 80 100 /t ON - Switching Time (μs)t OFF tOFF V+ = 2 V Temperature (°C) tON V+ = 2 V tON V+ = 3 V tON V+ = 5 V tOFF V+ = 3 V tOFF V+ = 5 V 100 K - 90 10 M - 70 - 50
100 M1 M
(dB)Loss, OIRR, XTALK - 30 - 10 Loss OIRR 1 G - 80 - 60 - 40 - 20 Frequency (Hz) DG2017 SW 1 and SW2 V+ = 3 V R L = 50 Ω XTA L K Leakage vs. Analog Voltage Switching Time vs. Temperature Insertion Loss, Off-Isolation, Crosstalk vs. Frequency - 800 - 600 - 400 - 200 200 400 600 800 VCOM, VNO, VNC - Analog Voltage (V) Leakage Current (pA) V+ = 3 V INO(off), INC(off) ICOM(on) ICOM(off) 100 - 60 - 40 - 20 0 20 40 60 80 100 /t ON - Switching Time (μs)t OFF tON V+ = 2 V tON V+ = 3 V tOFF V+ = 5 V tOFF V+ = 3 V Temperature (°C) tOFF V+ = 2 V tON V+ = 5 V - 80 100 K - 90 10 M - 70 - 50 (dB)Loss, OIRR, XTALK - 30 - 10 Loss OIRR XTA L K 1 G - 60 - 40 - 20 Frequency (Hz) DG2017 SW 3 and SW4 V+ = 3 V R L = 50 Ω
Package Information
www.vishay.com Vishay Siliconix Revision: 22-Apr-13 1 Document Number: 71921 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 QFN 4x4-16L Case Outline Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. VARIATION 1 VARIATION 2 DIM MILLIMETERS(1) INCHES MILLIMETERS(1) INCHES A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 D 4.00 BSC 0.157 BSC 4.00 BSC 0.157 BSC e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC E 4.00 BSC 0.157 BSC 4.00 BSC 0.157 BSC N (3) 16 16 16 16 Nd(3) 4 444 Ne(3) 4 444 ECN: S13-0893-Rev. B, 22-Apr-13 DWG: 5890 (4) (5)
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