DG2002DL-T1-E3

DG2002_V01 VISHAY | Alldatasheet

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Technical content

Document Number: 71448 S-72609-Rev. C, 24-Dec-07 www.vishay.com Low-Voltage Single SPDT Analog Switch

FEATURES

• Low voltage operation (1.8 V to 5.5 V)  Low on-resistance - r DS(on): 7 Ω  Fast switching - t ON : 8 ns, tOFF: 6 ns  Low charge injection - Q INJ: 5 pC  Low power consumption  TTL/CMOS compatible  6-pin SC70 package BENEFITS  Reduced power consumption  Simple logic interface  High accuracy  Reduce board space

APPLICATIONS

 Cellular phones  Communication systems  Portable test equipment  Battery operated systems  Sample and hold circuits

DESCRIPTION

The DG2002 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 8 ns, tOFF: 6 ns), low on-resistance (r DS(on): 7 Ω) and small physical size (SC70), the DG2002 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2002 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before - make is guaranteed for DG2002. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION * Pb containing terminations are not RoHS compliant, exemptions may apply. NO (Source1) COM NC (Source2) Top View IN GND 4 SC-70 Device Marking: E2xx TRUTH TABLE Logic NC NO 0O N O F F 1O F F O N

ORDERING INFORMATION

Temp Range Package Part Number - 40 to 85 °C SC70-6 DG2002DL-T1 DG2002DL-T1-E3 Available Pb-free RoHS* COMPLIANT

www.vishay.com Document Number: 71448 S-72609-Rev. C, 24-Dec-07 Vishay Siliconix DG2002 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/°C above 70 °C. ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Referenced V+ to GND - 0.3 to +6 VIN, COM, NC, NOa - 0.3 to (V+ + 0.3) Continuous Current (Any Terminal) ± 50 mAPeak Current (Pulsed at 1 ms, 10 % duty cycle) ± 200 Storage Temperature - 65 to + 150 °C Power Dissipation (Packages)b 6-Pin SC70c 250 mW SPECIFICATIONS V+ = 2.0 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 2.0 V, ± 10 % VIN = 0.4 or 1.6 Ve Tempa Limits - 40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC VCOM Full 0 V+ V On-Resistance rON V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA Room Fulld 39.3 46.1 47.1 Ω rON Flatnessd rON Flatness V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room 21 Switch Off Leakage Currentf INO(off) INC(off) V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V Room Fulld - 250 - 3.0 250 3.0 pA nA ICOM(off) Room Fulld - 250 - 3.0 250 3.0 pA nA Channel-On Leakage Currentf ICOM(on) V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V Room Fulld - 250 - 3.0 250 3.0 pA nA Digital Control Input High Voltage VINH Full 1.6 V Input Low Voltage VINL Full 0.4 Input Capacitanced Cin Full 3 pF Input Current IINL or IINH VIN = 0 or V+ Full - 1 1 µA Dynamic Characteristics Tur n-On Time tON VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 Room Fulld 22 31 nsTurn-Off Time tOFF Room Fulld 10 17 Break-Before-Make Time td Room 1 12 Charge Injectiond QINJ CL = 1 nF , VGEN = 0 V, RGEN = 0 Ω, Figure 3 Room 5 10 pC Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF , f = 1 MHz Room - 67 dB Crosstalkd XTALK Room - 71 NO, NC Off Capacitanced CNO(off) CNC(off) VIN = 0 or V+, f = 1 MHz Room 5 pF Channel-On Capacitanced CON Room 29 Power Supply Power Supply Range V+ 1.8 2.2 V Power Supply Currentd I+ VIN = 0 or V+ 0.01 1.0 µA Power Consumption PC 2.2 µW

Document Number: 71448 S-72609-Rev. C, 24-Dec-07 www.vishay.com Vishay Siliconix DG2002 SPECIFICATIONS V+ = 3.0 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, ±10 % VIN = 0.4 or 2.0 Ve Tempa Limits - 40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC VCOM Full 0 V+ V On-Resistanced rON V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room Full 12.2 14.8 15.8 Ω rON Flatnessd rON Flatness V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room 5 Switch Off Leakage Currentf INO(off) INC(off) V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V Room Full - 500 - 4.0 500 4.0 pA nA ICOM(off) Room Full - 500 - 4.0 500 4.0 pA nA Channel-On Leakage Currentf ICOM(on) V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room Full - 500 - 4.0 500 4.0 pA nA Digital Control Input High Voltage VINH Full 2 V Input Low Voltage VINL Full 0.4 Input Capacitanced Cin Full 3 pF Input Current IINL or IINH VIN = 0 or V+ Full - 1 1 µA Dynamic Characteristics Tur n-On Timed tON VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 Room Full 12 21 nsTurn-Off Timed tOFF Room Full 71 4 Break-Before-Make Timed td Room 1 6 Charge Injectiond QINJ CL = 1 nF , VGEN = 0 V, RGEN = 0 Ω, Figure 3 Room 5 10 pC Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF , f = 1 MHz Room - 67 dB Crosstalkd XTALK Room - 69 NO, NC Off Capacitanced CNO(off) CNC(off) VIN = 0 or V+, f = 1 MHz Room 5 pF Channel-On Capacitanced CON Room 29 Power Supply Power Supply Range V+ 2.7 3.3 V Power Supply Current I+ V IN = 0 or V+ 0.01 1.0 µA Power Consumption PC 3.3 µW

www.vishay.com Document Number: 71448 S-72609-Rev. C, 24-Dec-07 Vishay Siliconix DG2002 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS V+ = 5.0 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 % VIN = 0.8 or 2.4 Ve Tempa Limits - 40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room Full 6.4 7.4 7.8 8.8 Ω rON Flatnessd rON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room 3 Switch Off Leakage Current INO(off), INC(off) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V Room Full - 1.0 - 4.0 1.0 4.0 nAICOM(off) Room Full - 1.0 - 4.0 1.0 4.0 Channel-On Leakage Current ICOM(on) VNO, VNC = VCOM = 1 V/4.5 V Room Full - 1.0 - 4.0 1.0 4.0 Digital Control Input High Voltage VINH Full 2.4 V Input Low Voltage VINL Full 0.8 Input Capacitance Cin Full 3 pF Input Current IINL or IINH VIN = 0 or V+ Full - 1 1 µA Dynamic Characteristics Tur n-On Timed tON VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 Room Full 81 5 nsTurn-Off Timed tOFF Room Full 61 3 Break-Before-Make Timed td Room 1 4 Charge Injectiond QINJ CL = 1 nF , VGEN = 0 V, RGEN = 0 Ω, Figure 3 Room 5 10 pC Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF , f = 1 MHz Room - 69 dB Crosstalkd XTALK Room - 69 Source-Off Capacitanced CNO(off), CNC(off) VIN = 0 or V+, f = 1 MHz Room 5 pF Channel-On Capacitanced CON Room 29 Power Supply Power Supply Range V+ 4.5 5.5 V Power Supply Current I+ V IN = 0 or V+ 0.01 1.0 µA Power Consumption PC 5.5 µW

Document Number: 71448 S-72609-Rev. C, 24-Dec-07 www.vishay.com Vishay Siliconix DG2002 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted rON vs. VCOM and Supply Voltage Supply Current vs. Temperature Leakage Current vs. Temperature - On-Resistance (Ω)rON 012345 VCOM - Analog Voltage (V) V+ = 1.8 V V+ = 2 V V+ = 3 V V+ = 5 V - 60 - 40 - 20 0 2 0 4 0 6 0 8 0 100 0.01 Temperature (°C) I+ - Supply Current (nA) 0.1 V+ = 5 V V IN = 0 V - 60 - 40 - 20 0 2 0 4 0 6 0 8 0 100 1000 100 Leakage Current (pA) Temperature (°C) 10000 V+ = 5 V I NO ( o f f ) /I NC( of f) I CO M( on) I CO M ( of f) rON vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency Leakage vs. Analog Voltage 0123456 - On-Resistance (Ω)rON V CO M - Analog Voltage (V) V+ = 2 V V+ = 5 V 85 °C - 40 °C 25 °C 85 °C - 40 °C 25 °C 10 m Input Switching Frequency (Hz)

10 K 1 M 10 M100 K1 K10010

I+ - Supply Current (A) 1 n 1 m 100 µ 10 µ 1 µ 10 n 100 n - 150 - 100 - 50 100 150 012345 VCOM, VNO, VNC - Analog Voltage Leakage Current (pA) V+ = 5 V T = 25 °C I NO ( o f f ) /I NC( of f) ICOM(on) I CO M ( of f)

www.vishay.com Document Number: 71448 S-72609-Rev. C, 24-Dec-07 Vishay Siliconix DG2002 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Switching Time vs. Temperature and Supply Voltage Switching Threshold vs. Supply Voltage - 60 - 40 - 2 0 0 2 04 06 08 0 100 t ON V+ = 2 V Temperature (°C) tON, tOFF - Switching Time (ns) t ON V+ = 3 V t ON V+ = 5 V t OFF V+ = 2 V t OFF V+ = 3 V t OFF V+ = 5 V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0123456 V+ - Supply Voltage (V) V T - Switching Threshold (V) Insertion Loss, Off -Isolation Crosstalk vs. Frequency Charge Injection vs. Analog Voltage - 100 - 30 Loss, O IRR, X Frequenc y (Hz) - 20 - 10

10 M 1 G 100 M 1 M100 K

• 40 - 50 - 60 - 70 - 80 - 90 T ALK (dB) V+ = 3 V R L = 50 Ω LOSS OIRR X TALK - 20 - 15 - 10 - 5 0123456 VCOM - Analog V oltage (V) Q - Charge Injection (pC) V+ = 2 V V+ = 3 V V+ = 5 V V+ = 2.5 V

L c EE1 e D A2 A -A- b -B- 654

Package Information

Document Number: 71154 06-Jul-01 www.vishay.com /C0083/C0067/C0262/C0055/C0048/C0058/C0032/C0032/C0032/C0054/C0262/C0076/C0069/C0065/C0068/C0083 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Nom Max Min Nom Max A 0.90 – 1.10 0.035 – 0.043 A 2 0.80 – 1.00 0.031 – 0.039 b 0.15 – 0.30 0.006 – 0.012 c 0.10 – 0.25 0.004 – 0.010 e 0.65BSC 0.026BSC 7/C0095Nom 7/C0095Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550

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