DFLS1100
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 6
Technical content
Document number: DS30497 Rev. 14 - 2 1 of 6 www.diodes.com February 2021 © Diodes Incorporated DFLS1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI Product Summary VRRM (V) IO (A) VF max (V) IR max (µA) 100 1 0.77 0.35 Description and Applications This Schottky Barrier Rectifier is designed to meet the stringent requirements of automotive applications. It is ideally suited for use as:
- Polarity Protection Diode
- Re-circulating Diode
- Switching Diode Features and Benefits
- Guard Ring Die Construction for Transient Protection
- Low Power Loss, High Efficiency
- Patented Interlocking Clip Design for High Surge Current Capacity
- Lead Free Finish, RoHS Compliant (Notes 1 & 2)
- Halogen- and Antimony-Free. “Green” Device (Note 3)
- The DFLS1100Q-7 is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data
- Case: POWERDI®123
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: Cathode Band
- Terminals: Finish – Matte Tin Annealed over Copper Lead- Frame. Solderable per MIL-STD-202, Method 208
- Weight: 0.01 grams (Approximate) Ordering Information (Note 4) Part Number Compliance Case Packaging DFLS1100-7 Commercial POWERDI®123 3000/Tape & Reel DFLS1100Q-7 Automotive POWERDI®123 3000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2013 2014 2015 2016 2017 2018 2019 2020 2021 Code A B C D E F G H I Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View F09 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Green PowerDI is a registered trademark of Diodes Incorporated.
Document number: DS30497 Rev. 14 - 2 2 of 6 www.diodes.com February 2021 © Diodes Incorporated DFLS1100 Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V RMS Reverse Voltage VR(RMS) 71 V Forward Current rms (TC = +160°C, D = 0.5) IF(RMS) 2 A Average Forward Current IF(AV) 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 50 A Repetitive Peak Reverse Current tP = 2μs, f = 1kHz Square IRRM 1.0 A Repetitive Peak Avalanche Power tP = 1µs, TJ = +25°C PARM 1500 W Non-repetitive Peak Reverse Current tP = 100μs Square IRSM 1.0 A Critical Rate of Rise of Reverse Voltage (Rated VR, TJ = +25°C) dV/dt 10000 V/μs Thermal Characteristics Characteristic Symbol Typ Max Unit Thermal Resistance Junction to Soldering (Note 5) RθJS — 7 °C/W Thermal Resistance Junction to Ambient (Note 6) TA = +25°C RθJA 125 — Thermal Resistance Junction to Case (Note 6) TA = +25°C RθJC 21 — Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V(BR)R 100 V IR = 1mA Forward Voltage VF 0.77 V IF = 1.0A, TA = +25°C Leakage Current (Note 7) IR 0.10 µA VR = 50V, TA = +25°C 3 µA VR = 50V, TA = +65°C 15 µA VR = 50V, TA = +85°C 0.35 µA VR = 100V, TA = +25°C 0.35 mA VR = 100V, TA = +125°C Total Capacitance CT 36 pF VR = 5VDC, f = 1MHz Notes: 5. Theoretical RθJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction. 7. Short duration pulse test used to minimize self-heating effect. 8. The heat generated must be less than thermal conductivity from junction -to-ambient: dPD/DTJ < 1/RthJA
Document number: DS30497 Rev. 14 - 2 3 of 6 www.diodes.com February 2021 © Diodes Incorporated DFLS1100 0.2 0.4 0.6 1.8 1.6 1.4 1.2 0.8 0 0.5 31 1.5 2.52 3.5 P , POWER DISSIPATION (W)D I , AVERAGE FORWARD CURRENT (A) Fig. 1 Forward Power Dissipation F( AV) 0.00001 0.0001 0.01 0.001 0.1 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 125 CA ° T = 150 CA ° T = 175 CA ° T = 25 CA ° T = -55 CA ° T = 75 CA ° V , INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics R C , TOTAL CAPACITANCE (pF)T V , DC REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. Reverse Voltage R 0 5 10 15 20 Note 4 250 50 75 100 125 150 175 200 1.2 1.0 0.6 0.8 0.4 0.2 T , AMBIENT TEMPERATURE ( C) Fig. 5 Forward Current Derating Curve A ° I , AVERAGE FORWARD CURRENT (A)F(AV) 100,000 10,000 1,000 100 P , MAXIMUM AVALANCHE POWER (W)ARM 0.01 0.1 1 10 100 1,000 T , PULSE DURATION (µS)P Fig. 6 Maximum Avalanche Power Curve T = 25°CJ (µs) °C Note 6
Document number: DS30497 Rev. 14 - 2 4 of 6 www.diodes.com February 2021 © Diodes Incorporated DFLS1100 100 120 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE ( C)J ° P , AVALANCHE PEAK PULSE POWER DERATING IN PERCENTAGE (%) ARM Fig. 7 Pulse Derating Curve
Document number: DS30497 Rev. 14 - 2 5 of 6 www.diodes.com February 2021 © Diodes Incorporated DFLS1100 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI123 PowerDI123 Dim Min Max Typ A 0.93 1.00 0.98 A3 0.15 0.25 0.20 b 0.85 1.25 1.00 b2 1.025 1.125 1.10 D 1.63 1.93 1.78 E 3.50 3.90 3.70 E1 2.60 3.00 2.80 L 0.40 0.50 0.45 L1 1.25 1.40 1.35 L3 0.125 0.275 0.20 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI123 Dimensions Value (in mm) G 0.65 X 1.05 X1 2.40 X2 4.10 Y 1.50 Y1 1.50 D BOTTOM VIEW ( OPTION A) TOP VIEW ( OPTION A) E L( 2x) L1 L3L3 E L( 2x) L1 L3L3 A b bD TOP VIEW ( OPTION B) BOTTOM VIEW ( OPTION B) X X1 G Y
Document number: DS30497 Rev. 14 - 2 6 of 6 www.diodes.com February 2021 © Diodes Incorporated DFLS1100 IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON- INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to i llustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and tec hnically trained engineering customers and users who design with Diodes products. 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