DFBR030U3LP
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Features
Dual 30V N-Channel MOSFETs (Q1, Q2) with Dual 3.0A Super Barrier Rectifier Diodes (D1, D2) packaged in a 4.0 x 4.0 x 0.6mm DFN package Full-Bridge Rectifier Block Super Barrier Rectifiers (D1, D2) Ultra low forward voltage drop Patented Super Barrier Rectifier technology +150°C operating temperature ±8kV ESD protection (HBM, 3B) ±25kV ESD protection (IEC61000-4-2 Level 4, Air Discharge) N-Channel MOSFET (Q1, Q2) Low On-Resistance to minimize conduction loss Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: U-DFN4040-8 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper Leadframe (Lead-Free Plating); Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.031 grams
Applications
Wireless Charging AC-DC Rectification Optimized for Power Management Applications for Portable Products Ordering Information (Note 4) Part Number Compliance Case Packaging DFBR030U3LP-13 Standard U-DFN4040-8 4,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Top View Pin Configuration Device Schematic (Dual Channel) FB302 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 for 2015) WW = Week Code (01 to 53) FB302 YYWW VOUT L1_1 GND1 GND1 GND2 GND2 VOUT L1_2 VOUT L1_1 L1_2 VOUT L1_1 GND1 GND2 L1_2 U-DFN4040-8 U-DFN4040-8 PART OBSOLETE – CONTACT US
Document number: DS35994 Rev. 9 - 4 2 of 8 www.diodes.com February 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DFBR030U3LP OBSOLETE – PART DISCONTINUED Maximum Ratings – D1, D2 (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VRM 30 V RMS Reverse Voltage VR(RMS) 21 V Average Rectified Output Current (See Figure 1) IO 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 20 A Maximum Ratings – Q1, Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Input Voltage Between Two MOSFET Drain VLL 30 V Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 20 V Drain Current (Note 5) ID 3.2 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 500 mW Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 250 °C/W Power Dissipation (Note 6) PD 1000 mW Thermal Resistance, Junction to Ambient Air (Note 6) RθJA 125 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics – D1, D2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V(BR)R 30 — — V IR = 400µA Forward Voltage Drop VF — 0.25 0.278 V IF = 0.1A, TJ = +25°C Leakage Current (Note 7) IR — 50 150 µA VR = 5V, TJ = +25°C — 100 400 µA VR = 30V, TJ = +25°C — 6 15 mA VR = 5V, TJ = +125°C — 10 20 mA VR = 30V, TJ = +125°C Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com . 6. Part mounted on FR-4 board with 1-in sq pad layout, 2oz Cu. 7. Short duration pulse test used to minimize self-heating effect. Pulse width ≤ 300μs, duty cycle ≤ 2%.
Document number: DS35994 Rev. 9 - 4 3 of 8 www.diodes.com February 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DFBR030U3LP OBSOLETE – PART DISCONTINUED Electrical Characteristics – Q1, Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 220 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS 200 µA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1 2.2 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) mΩ VGS = 10V, ID = 2.0A VGS = 10V, ID = 3.2A VGS = 4.5V, ID = 2.0A VGS = 4.5V, ID = 3.2A Forward Transconductance gfs 7 S VDS =15V, ID = 2.0A Diode Forward Voltage (Note 7) VSD 0.5 1.2 V VGS = 0V, IS = 2.25A Characteristic Symbol Min Typ Max Unit Test Condition Rectifying Forward Voltage (Note 7) Vfd2 0.45 0.56 V Input voltage VLL = ±5V; The output current of Rectifier IOUT = 2A Rectifier leakage current Ileak 30 1000 µA Input voltage VLL = 16V; No Load on the Rectifier output Rectifier Reverse leakage current Irleak 20 1000 µA Input voltage VLL = 0V; The output voltage of the Rectifier VOUT = 5V Note: 7. Short duration pulse test used to minimize self-heating effect. Pulse width ≤ 300μs, duty cycle ≤ 2%.
Document number: DS35994 Rev. 9 - 4 7 of 8 www.diodes.com February 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DFBR030U3LP OBSOLETE – PART DISCONTINUED Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. U-DFN4040-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 - - 0.15 b 0.20 0.30 0.25 D 3.95 4.05 4.00 D1 2.05 2.25 2.15 D2 0.90 1.10 1.00 E 3.95 4.05 4.00 E1 1.00 1.20 1.10 E2 2.50 2.70 2.60 e - - 0.80 L 0.35 0.45 0.40 Z - - 0.675 All Dimensions in mm Dimensions Value (in mm) C 0.800 X 0.350 X1 1.150 X2 1.100 X3 2.250 X4 2.750 X5 3.650 Y 0.600 Y1 2.700 Y2 1.200 Y3 2.700 Y4 4.300 D E E2 A A1 A3 (Pin #1 ID) Seating Plane Z b e L X C Y C-0.279 Y3 Y4
Document number: DS35994 Rev. 9 - 4 8 of 8 www.diodes.com February 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DFBR030U3LP OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with th eir applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities a ssociated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may a lso be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa le is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely respons ible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives a nd agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accur ate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this docume nt is error-free and Diodes is under no obligation to update or otherwise correct this in formation. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any produ ct described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising f rom any such unauthorized use. 9. This Notice may be periodically updated with the mos t recent version available at https://www.diodes.com/about/company/terms-and- conditions/important-notice The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. DIODES is a trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. © 2023 Diodes Incorporated. All Rights Reserved. www.diodes.com