DFB15 COHERENT | Alldatasheet
Document overview
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Technical content
10 Gbps DFB LASER DIODE CHIP
FEATURES AVAILABLE WAVELENGTHS
- Designed for 10 Gb/s
- Operating temperature -40 °C to 85 °C
- CWDM 1270 nm to 1330 nm
Electro-Optical Characteristics Operating conditions: Top = -40 to 85 °C Parameter Symbol Condition Min Typical Max Unit Threshold Current Ith 85 °C 21 29 mA 25 °C 8 mA Slope Efficiency SE 85 °C 0.1 W/A 25 °C 0.4 W/A Forward Voltage Vf PO = 5 mW 1.6 V Series Resistance R PO = 5 mW 4 6 9 Ohm Front/Back Power Ratio Pf/Pb 10 60 Side Mode Suppression Ratio SMSR PO = 5 mW 35 Wavelength λ see table below Wavelength Temp. Coefficient dλ /dT 0.09 nm/°C Beam Divergence (Horizontal) θH FWHM 20 degree Beam Divergence (Vertical) θV FWHM 30 degree Relaxation oscillation frequency fr I = Ith+25 mA, 72 °C 10.5 11.3 GHz Available Wavelengths Channel Symbol Condition Min Typical Max Unit CWDM-L0 λ 0 °C to 85 °C 1263.5 1269.5 1277 nm CWDM-L1 λ 0 °C to 85 °C 1283.5 1289.5 1297 nm CWDM-L2 λ 0 °C to 85 °C 1303.5 1309.5 1317 nm CWDM-L3 λ 0 °C to 85 °C 1323.5 1329.5 1337 nm Absolute Maximum Ratings Parameter Symbol Condition Max Rating Unit Operating Current Iop T <25 °C 110 mA T = 25 - 85 °C 100 mA T >85 °C 150 mA Reverse Voltage VR 2 V Environmental Exposure Ratings Parameter Symbol Condition Max Rating Unit Case temperature Tc -10 to +95 °C Storage Temperature Ts tg -40 to +100 °C
© 2022 Coherent Corp. Legal notices : coherent.com/legal sales@coherent.com www.coherent.com Chip Dimensions Parameter Min Typical Max Unit Chip width 260 280 300 µm Chip length 180 200 220 µm Chip thickness 80 85 90 µm Bond pad width 75 µm Bond pad length 75 µm Top view Side view