DF6S25P3NU TOSHIBA | Alldatasheet
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ESD Protection Diodes Silicon Epitaxial Planar DF6S25P3NU Start of commercial production 2022-12 1. General The DF6S25P3NU is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF6S25P3NU has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF6S25P3NU is housed in an ultra-compact package (2.0 mm × 2.0 mm) to meet applications that require a small footprint. 2. Applications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. Features (1) Suitable for use with a 20 V signal line. (VRWM ≤ 22 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.01 Ω (typ.)) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 42 V@IPP = 110 A (typ.)) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (2.0 mm × 2.0 mm size (Nickname: UDFN6B)) 4. Packaging and Pin Assignment UDFN6B 1: Cathode 2: Cathode 3: Anode 4: Anode 5: Cathode 6: Cathode 2022-12-26 Rev.1.0 ©2021-2022 Toshiba Electronic Devices & Storage Corporation
- Example of Circuit Diagram 6. Quick Reference Data Characteristics Working peak reverse voltage Dynamic resistance Electrostatic discharge voltage (IEC61000-4-2) (Contact) Symbol VRWM RDYN VESD Note (Note 1) (Note 2) (Note 3) Test Condition Min Typ. 0.01 Max Unit V Ω kV Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 16 A and IPP2 = 30 A. Note 3: Criterion: No damage to devices. 6.1. ESD Clamp Waveform (Note) Fig. 6.1.1 +8 kV Fig. 6.1.2 -8 kV Fig. 6.1.3 IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2022-12-26 Rev.1.0 ©2021-2022 Toshiba Electronic Devices & Storage Corporation
6.2. TLP Characteristics (Note) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 6.3. Clamp Voltage - Peak Pulse Current (V C - I PP) (Note) Fig. 6.3.1 VC - I PP Fig. 6.3.2 Based on IEC61000-4-5 8/20 µs pulse. Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2022-12-26 Rev.1.0 ©2021-2022 Toshiba Electronic Devices & Storage Corporation
- Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Characteristics Electrostatic discharge voltage (IEC61000-4-2) (Contact) Electrostatic discharge voltage (IEC61000-4-2) (Air) Peak pulse power (tp = 8/20 µs) Peak pulse current (tp = 8/20 µs) Junction temperature Storage temperature Symbol VESD PPK IPP Tj Tstg Note (Note 1) (Note 2) Rating ±30 ±30 5060 110 150 -55 to 150 Unit kV W A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to IEC61000-4-5. 8. Electrical Characteristics (Unless otherwise specified, T a = 25 ) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance Fig. 8.1 Definitions of Electrical Characteristics Characteristics Working peak reverse voltage Total capacitance Dynamic resistance Reverse breakdown voltage Reverse current Clamp voltage Symbol VRWM Ct RDYN VBR IR VC Note (Note 1) (Note 2) (Note 3) (Note 2) Test Condition VR = 0 V, f = 1 MHz IBR = 1 mA VRWM = 22 V IPP = 1 A IPP = 110 A ITLP = 30 A Min 22.5 Typ. 650 0.01 25.8 Max 26.5 0.1 Unit V pF Ω V µA V V Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 16 A and IPP2 = 30 A. Note 3: Based on IEC61000-4-5 8/20 µs pulse. 2022-12-26 Rev.1.0 ©2021-2022 Toshiba Electronic Devices & Storage Corporation
- Characteristics Curves (Note) Fig. 9.1 I - V Fig. 9.2 IR - V R Fig. 9.3 Ct - V R Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2022-12-26 Rev.1.0 ©2021-2022 Toshiba Electronic Devices & Storage Corporation
- Equivalent Circuit 1: Cathode 2: Cathode 3: Anode 4: Anode 5: Cathode 6: Cathode 11. Marking (Top view) 2022-12-26 Rev.1.0 ©2021-2022 Toshiba Electronic Devices & Storage Corporation
Unit: mm Weight: 8.5 mg (typ.) Package Name(s) Nickname: UDFN6B 2022-12-26 Rev.1.0 ©2021-2022 Toshiba Electronic Devices & Storage Corporation
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