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Document overview
- Manufacturer or author: Infineon Technologies AG
- PDF pages: 14
Technical content
Features
- Electrical features - V DSS = 2000 V - I DN = 60 A / IDRM = 120 A - High current density - Low inductive design
- Mechanical features - Rugged mounting due to integrated mounting clamps - PressFIT contact technology - Integrated NTC temperature sensor Potential applications
- Solar applications Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2022-07-15
DF4-19MR20W3M1HF_B11 EasyPACK™ module Table of contents Datasheet 2 Revision 1.00 2022-07-15
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 3.2 kV Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.4 mm Creepage distance dCreep terminal to terminal 10.2 mm Clearance dClear terminal to heatsink 10.1 mm Clearance dClear terminal to terminal 9.4 mm Comparative tracking index CTI > 400 Relative thermal index (electrical) RTI housing 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 14 nH Storage temperature Tstg -40 125 °C Mounting torque for module mounting M - Mounting according to valid application note M5, Screw 1.3 1.5 Nm Weight G 78 g Note: The current under continuous operation is limited to 25 A rms per connector pin.
2 MOSFET
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Drain-source voltage VDSS Tvj = 25 °C 2000 V Implemented drain current IDN 60 A Continuous DC drain current IDDC Tvj = 175 °C, VGS = 18 V TH = 65 °C 50 A Repetitive peak drain current IDRM verified by design, tp limited by Tvjmax 120 A Gate-source voltage, max. transient voltage VGS D < 0.01 -10/23 V Gate-source voltage, max. static voltage VGS -7/20 V DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 3 Revision 1.00 2022-07-15
Table 4 Recommended values Parameter Symbol Note or test condition Values Unit On-state gate voltage VGS(on) 18 V Off-state gate voltage VGS(off) -3 V Table 5 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Drain-source on-resistance RDS(on) ID = 60 A VGS = 18 V, Tvj = 25 °C 17.2 26.5 mΩ VGS = 18 V, Tvj = 125 °C 36.6 VGS = 18 V, Tvj = 175 °C 51.7 Gate threshold voltage VGS(th) ID = 34 mA, VDS = VGS, Tvj = 25 °C, (tested after 1ms pulse at VGS = +20 V) 3.45 4.3 5.15 V Total gate charge QG VDD = 1200 V, VGS = -3/18 V 0.234 µC Internal gate resistor RGint Tvj = 25 °C 3.8 Ω Input capacitance CISS f = 100 kHz, VDS = 1200 V, VGS = 0 V Tvj = 25 °C 7.24 nF Output capacitance COSS f = 100 kHz, VDS = 1200 V, VGS = 0 V Tvj = 25 °C 0.169 nF Reverse transfer capacitance Crss f = 100 kHz, VDS = 1200 V, VGS = 0 V Tvj = 25 °C 0.012 nF COSS stored energy EOSS VDS = 1200 V, VGS = -3/18 V, Tvj = 25 °C 154 µJ Drain-source leakage current IDSS VDS = 2000 V, VGS = -3 V Tvj = 25 °C 0.012 205 µA Gate-source leakage current IGSS VDS = 0 V, Tvj = 25 °C VGS = 20 V 400 nA Turn-on delay time (inductive load) td on ID = 60 A, RGon = 1.6 Ω, VDD = 1200 V, VGS = -3/18 V Tvj = 25 °C 38.1 ns Tvj = 125 °C 38.1 Tvj = 175 °C 38.1 Rise time (inductive load) tr ID = 60 A, RGon = 1.6 Ω, VDD = 1200 V, VGS = -3/18 V Tvj = 25 °C 26 ns Tvj = 125 °C 26 Tvj = 175 °C 26 Turn-off delay time (inductive load) td off ID = 60 A, RGoff = 2 Ω, VDD = 1200 V, VGS = -3/18 V Tvj = 25 °C 74.4 ns Tvj = 125 °C 81.5 Tvj = 175 °C 83.9 (table continues...) DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 4 Revision 1.00 2022-07-15
Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Fall time (inductive load) tf ID = 60 A, RGoff = 2 Ω, VDD = 1200 V, VGS = -3/18 V Tvj = 25 °C 16 ns Tvj = 125 °C 16.1 Tvj = 175 °C 17.1 Turn-on energy loss per pulse Eon ID = 60 A, VDD = 1200 V, Lσ = 35 nH, VGS = -3/18 V, RGon = 1.6 Ω, di/dt = 5 kA/µs (Tvj = 175 °C) Tvj = 25 °C 1.5 mJ Tvj = 125 °C 1.5 Tvj = 175 °C 1.5 Turn-off energy loss per pulse Eoff ID = 60 A, VDD = 1200 V, Lσ = 35 nH, VGS = -3/18 V, RGoff = 2 Ω, dv/dt = 56.14 kV/µs (Tvj = 175 °C) Tvj = 25 °C 0.435 mJ Tvj = 125 °C 0.481 Tvj = 175 °C 0.529 Thermal resistance, junction to heat sink RthJH per MOSFET 0.515 K/W Temperature under switching conditions Tvj op -40 175 °C Note: The body diode of CoolSiC ™ Trench MOSFET cannot be used for polarity protection. An external diode is needed for this purpose. The selection of positive and negative gate-source voltages impacts the long-term behavior of the MOSFET and body diode. The design guidelines described in Application Notes AN 2018-09 and AN 2021-13 must be considered to ensure sound operation of the device over the planned lifetime. Tvj op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed specifications, please refer to AN 2021-13
3 Body diode
Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VSD ISD = 60 A, VGS = -3 V Tvj = 25 °C 4.6 6.15 V Tvj = 125 °C 4.15 Tvj = 175 °C 4 DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 5 Revision 1.00 2022-07-15
4 Diode, Boost
Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 2000 V Continuous DC forward current IF 40 A Repetitive peak forward current IFRM tP = 1 ms 80 A I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 90 A²s Tvj = 175 °C 70 Table 8 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 40 A Tvj = 25 °C 1.50 1.85 V Tvj = 125 °C 2.17 Tvj = 175 °C 2.67 Thermal resistance, junction to heat sink RthJH per diode 0.685 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions for booster diode. For detailed specifications, please refer to AN 2021-13
5 NTC-Thermistor
Table 9 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Specification according to the valid application note. DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 6 Revision 1.00 2022-07-15
6 Characteristics diagrams
Output characteristic (typical), MOSFET ID = f(VDS) VGS = 18 V Output characteristic field (typical), MOSFET ID = f(VDS) Tvj = 175 °C 100 120 100 120 Drain source on-resistance (typical), MOSFET RDS(on) = f(Tvj) VGS = 18 V Transfer characteristic (typical), MOSFET ID = f(VGS) VDS = 20 V -50 -25 0 25 50 75 100 125 150 175 1 2 3 4 5 6 7 8 9 10 11 100 120 DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 7 Revision 1.00 2022-07-15
Gate-source threshold voltage (typical), MOSFET VGS(th) = f(Tvj) VGS = VDS Gate charge characteristic (typical), MOSFET VGS = f(QG) ID = 60 A, Tvj = 25 °C -50 -25 0 25 50 75 100 125 150 175 Capacity characteristic (typical), MOSFET C = f(VDS) f = 100 kHz, Tvj = 25 °C, VGS = 0 V Switching losses (typical), MOSFET E = f(ID) RGoff = 2 Ω, RGon = 1.6 Ω, VDD = 1200 V, VGS = -3/18 V 1 10 100 1000 0.01 0.1 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 8 Revision 1.00 2022-07-15
Switching losses (typical), MOSFET E = f(RG) VDD = 1200 V, ID = 60 A, VGS = -3/18 V Switching times (typical), MOSFET t = f(ID) RGoff = 2.0 Ω, RGon = 1.6 Ω, VDD = 1200 V, Tvj = 175 °C, VGS = -3/18 V 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 0.01 0.1 Switching times (typical), MOSFET t = f(RG) VDD = 1200 V, ID = 60 A, Tvj = 175 °C, VGS = -3/18 V Reverse bias safe operating area (RBSOA), MOSFET ID = f(VDS) RGoff = 2 Ω, Tvj = 175 °C, VGS = -3/18 V 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 0 400 800 1200 1600 2000 2400 100 120 140 DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 9 Revision 1.00 2022-07-15
Transient thermal impedance , MOSFET Zth = f(t) Forward characteristic (typical), Diode, Boost IF = f(VF) 0.001 0.01 0.1 1 10 0.01 0.1 Transient thermal impedance, Diode, Boost Zth = f(t) Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0.001 0.01 0.1 1 10 0.01 0.1 0 25 50 75 100 125 150 175 100 1000 10000 100000 DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 10 Revision 1.00 2022-07-15
7 Circuit diagram
8 Package outlines
D SA DC+ADC-CDDC+D SC T1.2 DC-AB B T1.1T2.2 GDSD CT2.1 GBSB A GC GA DC+C DC+B 12,2B 0,1 recommended design hight - Details about hole specification for contacts refer to AN2009-01 chapter 2 - Diameters of drill P1,15mm - Copper thickness in hole 25~50um dimensioned for EJOT Delta PT WN5451 25 choose length according to pcb thickness 99,3( B0,1) Distance of threaded holes in heat sink 62B 0,45 44,43 47,43 44,43 47,43 109,9B0,45 (P4,2) B A (12) (16,4) (P3,4) C P according to screw head washer P3,54x 4,8 20,8 20,8 4,08 7,28 10,48 16,88 20,08 23,28 29,68 32,88 36,08 4,08 7,28 10,48 16,88 20,08 23,28 29,68 32,88 36,08 (P2,3) Dome4x L P0,25ABC 5,4 P B 0,1 Figure 2 DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 11 Revision 1.00 2022-07-15
9 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 3 DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 12 Revision 1.00 2022-07-15
Revision history
Document revision Date of release Description of changes 0.10 2022-07-05 Initial version 1.00 2022-07-15 Final datasheet DF4-19MR20W3M1HF_B11 EasyPACK™ module Datasheet 13 Revision 1.00 2022-07-15
All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-07-15 Published by Infineon Technologies AG
81726 Munich, Germany
© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABE754-002 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.