DF30JC10 SHINDENGEN | Alldatasheet
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Twin Diode Schottky Barrier Diode MSE) OUTLINE DF30JC10 (Package : STO-220 Unit Weight 15a (Typ) ———— eet) 102 100V 30A | Date cork Se = —E—— saan Ps-9 j Sarctt [>on SMD SMD eres 30JC10|) = (icIR=1.UMA © Low In=1.0mA rte I Pie |] OWMMEZIET LIC<L—_ Resistance for thermal run-away | Ras ODA RAR @ High lo Rating: Small-PKG — | ‘i © J—hPC.LCDEXY® ® Secondary rectification for Adepter of [3 ? B\\ PIFIDERAET Note-PG, LCD Monitor, etc. | Lh Ps eSWRROWRABIR © Secondary Rectification D2O D @@ @ e@DC/DC IYI\\—-4¥ © DC/DC Converter | © REMCBRO BAL © Reverse current protection SPE ue CISL TC Web tt b RIS CPE OSM F Sv. HARMS OU T SERA RE CORRE FS For details of the oul dhnensione; refer to our wib sila or Semiconductor Short Form Galalog, As for the marking, reer to the ‘specification "Marking, Terminal Connection’. Mew RATINGS @i8XtRALH Absolute Maximum Ratings (ioe Te =25C) Item Isymboll conditions ———_pe to. BRM? Unit Meer ine A EA UIEIE = iiadmumoeresvorge | Yew | Eto SOHziaeae, MCC, thie, I LHF) OMIA PS Milo/2, Te=116T A ‘Average Hecttied Forward Current lo | SUH: sine wave, Hesistance load, 4 Por diode tre, ton 1 156 BART — MH I SOHz iE, SHAY HELIA 7 ARH, T)= 25C A Peak Surge Forward Current IFSM_| 50Hz sine wave, Non-repetitive 1 oycle peak value, Tj=25°C A @BAN- PATE Electrical Characteristics (HOF Te =25T) MEH |15 70 Aime, HF OBL HL r IE singe V Fit Restonce MAX 13 caw 134 (4532-1) wwwshindengen.co.jpiproductisemi!
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Case Temperature Te (°C) % Sine wave it 50H2 Tile L TU EF. 3 Soli Sine wave is used for measurements. * PERERA OME MNF 7X EH THY ET. Typical LANG IAeRLT ST. ‘Typical is a statistical average cf the device's ability. www shindengen.co.jp/productisemil (4532-1) 135