DF200R07W2H3B77BPSA1 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 20
Technical content
Features
- Electrical features - V CES = 650 V - I C nom = 100 A / ICRM = 200 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low V CE,sat
- Mechanical features - Al 2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential applications
- Three-level applications
- Motor drives
- Solar applications Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.00 www.infineon.com 2021-11-15
DF200R07W2H3_B77 EasyPACK™ 2B module Table of contents Datasheet 2 Revision 1.00 2021-11-15
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 3.0 kV Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI > 200 Relative thermal index (electrical) RTI housing 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 41 nH Storage temperature Tstg -40 125 °C Mounting force per clamp F 40 80 N Weight G 39 g Note: The current under continuous operation is limited to 25A rms per connector pin.
2 IGBT , T1 / T4
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 650 V Implemented collector current ICN 50 A Continuous DC collector current ICDC Tvj max = 175 °C TH = 65 °C 40 A Repetitive peak collector current ICRM tP = 1 ms 100 A Gate-emitter peak voltage VGES ±20 V DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 3 Revision 1.00 2021-11-15
Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 50 A, VGE = 15 V Tvj = 25 °C 1.68 2.00 V Tvj = 125 °C 1.86 Tvj = 150 °C 1.89 Gate threshold voltage VGEth IC = 0.8 mA, VCE = VGE, Tvj = 25 °C 5.05 5.75 6.45 V Gate charge QG VGE = ±15 V, VCE = 400 V 0.5 µC Internal gate resistor RGint Tvj = 25 °C 0 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 2.95 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 0.096 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Tvj = 25 °C 0.021 mA Gate-emitter leakage current IGES VCE = 650 V, VGE = 0 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 2.2 Ω Tvj = 25 °C 0.014 µs Tvj = 125 °C 0.015 Tvj = 150 °C 0.015 Rise time (inductive load) tr IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 2.2 Ω Tvj = 25 °C 0.008 µs Tvj = 125 °C 0.010 Tvj = 150 °C 0.011 Turn-off delay time (inductive load) tdoff IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 2.2 Ω Tvj = 25 °C 0.124 µs Tvj = 125 °C 0.147 Tvj = 150 °C 0.150 Fall time (inductive load) tf IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 2.2 Ω Tvj = 25 °C 0.038 µs Tvj = 125 °C 0.073 Tvj = 150 °C 0.084 Turn-on energy loss per pulse Eon IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 2.2 Ω, di/dt =
4100 A/µs (Tvj = 150 °C)
Tvj = 25 °C 0.244 mJ Tvj = 125 °C 0.406 Tvj = 150 °C 0.451 Turn-off energy loss per pulse Eoff IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 2.2 Ω, dv/dt =
5100 V/µs (Tvj = 150 °C)
Tvj = 25 °C 0.593 mJ Tvj = 125 °C 0.94 Tvj = 150 °C 1.06 Thermal resistance, junction to heat sink RthJH per IGBT 1.19 K/W Temperature under switching conditions Tvj op -40 150 °C DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 4 Revision 1.00 2021-11-15
3 Diode, D1 / D4
Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 650 V Continuous DC forward current IF 75 A Repetitive peak forward current IFRM tP = 1 ms 150 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 680 A²s Tvj = 150 °C 660 Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 75 A Tvj = 25 °C 1.65 2.15 V Tvj = 125 °C 1.55 Tvj = 150 °C 1.50 Peak reverse recovery current IRM IF = 75 A, VR = 300 V, VGE = -15 V, -diF/dt =
3400 A/µs (Tvj = 150 °C)
Tvj = 25 °C 63 A Tvj = 125 °C 75 Tvj = 150 °C 79.1 Recovered charge Qr IF = 75 A, VR = 300 V, VGE = -15 V, -diF/dt = Tvj = 25 °C 2 µC Tvj = 125 °C 3.8 Tvj = 150 °C 4.5 Reverse recovery energy Erec IF = 75 A, VR = 300 V, VGE = -15 V, -diF/dt = Tvj = 25 °C 0.433 mJ Tvj = 125 °C 0.813 Tvj = 150 °C 0.959 Thermal resistance, junction to heat sink RthJH per diode 1.16 K/W Temperature under switching conditions Tvj op -40 150 °C
4 IGBT , T2 / T3
Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 650 V (table continues...) DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 5 Revision 1.00 2021-11-15
Table 7 (continued) Maximum rated values Parameter Symbol Note or test condition Values Unit Implemented collector current ICN 100 A Continuous DC collector current ICDC Tvj max = 175 °C TH = 65 °C 70 A Repetitive peak collector current ICRM tP = 1 ms 200 A Gate-emitter peak voltage VGES ±20 V Table 8 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 100 A, VGE = 15 V Tvj = 25 °C 1.46 1.90 V Tvj = 125 °C 1.61 Tvj = 150 °C 1.68 Gate threshold voltage VGEth IC = 1.6 mA, VCE = VGE, Tvj = 25 °C 5.05 5.75 6.45 V Gate charge QG VGE = ±15 V, VCE = 400 V 1.1 µC Internal gate resistor RGint Tvj = 25 °C 2 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 6.2 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 0.19 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Tvj = 25 °C 0.016 mA Gate-emitter leakage current IGES VCE = 650 V, VGE = 0 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 2.2 Ω Tvj = 25 °C 0.072 µs Tvj = 125 °C 0.082 Tvj = 150 °C 0.083 Rise time (inductive load) tr IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 2.2 Ω Tvj = 25 °C 0.024 µs Tvj = 125 °C 0.027 Tvj = 150 °C 0.027 Turn-off delay time (inductive load) tdoff IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 2.2 Ω Tvj = 25 °C 0.185 µs Tvj = 125 °C 0.215 Tvj = 150 °C 0.220 Fall time (inductive load) tf IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 2.2 Ω Tvj = 25 °C 0.027 µs Tvj = 125 °C 0.063 Tvj = 150 °C 0.084 (table continues...) DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 6 Revision 1.00 2021-11-15
Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-on energy loss per pulse Eon IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 2.2 Ω, di/dt =
3600 A/µs (Tvj = 150 °C)
Tvj = 25 °C 0.981 mJ Tvj = 125 °C 1.42 Tvj = 150 °C 1.53 Turn-off energy loss per pulse Eoff IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 2.2 Ω, dv/dt =
5300 V/µs (Tvj = 150 °C)
Tvj = 25 °C 1.37 mJ Tvj = 125 °C 2.06 Tvj = 150 °C 2.3 Thermal resistance, junction to heat sink RthJH per IGBT 0.830 K/W Temperature under switching conditions Tvj op -40 150 °C
5 Diode, D2 / D3
Table 9 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 650 V Continuous DC forward current IF 50 A Repetitive peak forward current IFRM tP = 1 ms 100 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 390 A²s Tvj = 150 °C 370 Table 10 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 50 A Tvj = 25 °C 1.65 2.15 V Tvj = 125 °C 1.55 Tvj = 150 °C 1.50 Peak reverse recovery current IRM IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = Tvj = 25 °C 59.9 A Tvj = 125 °C 72.3 Tvj = 150 °C 76.6 (table continues...) DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 7 Revision 1.00 2021-11-15
Table 10 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Recovered charge Qr IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = Tvj = 25 °C 1.49 µC Tvj = 125 °C 2.75 Tvj = 150 °C 3.18 Reverse recovery energy Erec IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = Tvj = 25 °C 0.332 mJ Tvj = 125 °C 0.638 Tvj = 150 °C 0.734 Thermal resistance, junction to heat sink RthJH per diode 1.64 K/W Temperature under switching conditions Tvj op -40 150 °C
6 NTC-Thermistor
Table 11 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Specification according to the valid application note. DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 8 Revision 1.00 2021-11-15
7 Characteristics diagrams
Output characteristic (typical), IGBT , T1 / T4 IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT , T1 / T4 IC = f(VCE) Tvj = 150 °C 100 100 Transfer characteristic (typical), IGBT , T1 / T4 IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT , T1 / T4 E = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V 5 6 7 8 9 10 11 12 100 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 9 Revision 1.00 2021-11-15
Switching losses (typical), IGBT , T1 / T4 E = f(RG) IC = 50 A, VCE = 300 V, VGE = +/- 15 V Switching times (typical), IGBT , T1 / T4 t = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C 0 2 4 6 8 10 12 14 16 18 20 22 24 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 Switching times (typical), IGBT , T1 / T4 t = f(RG) IC = 50 A, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C Transient thermal impedance, IGBT , T1 / T4 Zth = f(t) 0 2 4 6 8 10 12 14 16 18 20 22 24 0.01 0.1 0.001 0.01 0.1 1 10 0.01 0.1 DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 10 Revision 1.00 2021-11-15
Reverse bias safe operating area (RBSOA), IGBT , T1 / IC = f(VCE) RGoff = 2.2 Ω, VGE = ±15 V, Tvj = 150 °C Forward characteristic (typical), Diode, D1 / D4 IF = f(VF) 0 100 200 300 400 500 600 700 100 110 120 100 125 150 Transient thermal impedance, Diode, D1 / D4 Zth = f(t) Switching losses (typical), Diode, D1 / D4 Erec = f(IF) RGon = 2.2 Ω, VCE = 300 V 0.001 0.01 0.1 1 10 100 0.01 0.1 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 11 Revision 1.00 2021-11-15
Switching losses (typical), Diode, D1 / D4 Erec = f(RG) VCE = 300 V, IF = 75 A Output characteristic (typical), IGBT , T2 / T3 IC = f(VCE) VGE = 15 V 0 2 4 6 8 10 12 14 16 18 20 22 24 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 120 140 160 180 200 Output characteristic field (typical), IGBT , T2 / T3 IC = f(VCE) Tvj = 150 °C Transfer characteristic (typical), IGBT , T2 / T3 IC = f(VGE) VCE = 20 V 100 120 140 160 180 200 5 6 7 8 9 10 11 12 100 120 140 160 180 200 DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 12 Revision 1.00 2021-11-15
Switching losses (typical), IGBT , T2 / T3 E = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V Switching losses (typical), IGBT , T2 / T3 E = f(RG) IC = 100 A, VCE = 300 V, VGE = +/- 15 V 0 20 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8 10 12 14 16 18 20 22 24 Switching times (typical), IGBT , T2 / T3 t = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C Switching times (typical), IGBT , T2 / T3 t = f(RG) IC = 100 A, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C 0 20 40 60 80 100 120 140 160 180 200 0.001 0.01 0.1 0 2 4 6 8 10 12 14 16 18 20 22 24 0.01 0.1 DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 13 Revision 1.00 2021-11-15
Transient thermal impedance, IGBT , T2 / T3 Zth = f(t) Reverse bias safe operating area (RBSOA), IGBT , T2 / IC = f(VCE) RGoff = 2.2 Ω, VGE = ±15 V, Tvj = 150 °C 0.001 0.01 0.1 1 10 0.01 0.1 0 100 200 300 400 500 600 700 100 125 150 175 200 225 250 Forward characteristic (typical), Diode, D2 / D3 IF = f(VF) Transient thermal impedance, Diode, D2 / D3 Zth = f(t) 100 0.001 0.01 0.1 1 10 0.1 DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 14 Revision 1.00 2021-11-15
Switching losses (typical), Diode, D2 / D3 Erec = f(IF) RGon = 2.2 Ω, VCE = 300 V Switching losses (typical), Diode, D2 / D3 Erec = f(RG) VCE = 300 V, IF = 50 A 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 12 14 16 18 20 22 24 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 25 50 75 100 125 150 100 1000 10000 100000 DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 15 Revision 1.00 2021-11-15
8 Circuit diagram
DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 16 Revision 1.00 2021-11-15
9 Package outlines
DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 17 Revision 1.00 2021-11-15
10 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 3 DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 18 Revision 1.00 2021-11-15
Revision history
Document revision Date of release Description of changes 0.10 2021-06-30 Target datasheet 1.00 2021-11-15 Final datasheet DF200R07W2H3_B77 EasyPACK™ 2B module Datasheet 19 Revision 1.00 2021-11-15
All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-11-15 Published by Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAU256-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.