DF2005S DGNJDZ | Alldatasheet
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Conditions 01S 02S 04S 06S Repetitive Peak Reverse Voltage VRRM V 50 1 00 200 400 600 800 1000 Avera ge Rectified Output Current IO A 2.0 Surge(Non- r epetitive)Forward Current IFSM A 60HZ sine w ave, 1 cycle, Tj=25℃ 60 Current Squar ed Time I2t A2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode Operation Junction and Storage Temperature Range TJ,Tstg ℃ -55 ~+150 V 35 70 140 280 420 560 700V RMS Maximum RMS Voltage half Electrical Characteristics（Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Fo rward Voltage VFM V IFM=2.0A, Pulse measurement, Rating of per diode Peak Reve rse Current IRRM μA VRM=VRRM , Pulse measurement, Rating of per diode 10 Thermal Resist ance RθJ-A ℃/W RθJ-L Betwe en junction and lead 15 60Hz sine wave, R-load ,Ta=25 ℃ Bet ween junction and ambient 14.94 DF2005S THRU DF210S DFS DF20XS DF2 005S 08S 10S 1.0 DONGGUAN NANJING ELECTRONICS LTD., D ongguan Nanjing Electronics Ltd. www.dgnjdz.com1/3 All data s heet.com
T ypical Characteristics Io(A) Ta℃) IFSM( Nu mber of Cycles FI G.2:MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FI G.3: TYPICAL FORWARD CHARACTERISTICS FI G.4:TYPICAL REVERSE CHARACTERISTICS 00 160 sine w ave R-load free in air 40 80 12 0.8 2.0 2.4 2 5 10 20 50 100 non-repetit ive Tj=25℃ 0.4 0 .6 0.8 1.0 1.2 1.4 0.01 0.02 0.05 VF(V) IF(A) 0.1 0.5 Ta=25℃ 02 0 4 0 6 08 0 1 0 0 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=150℃ Tj=25℃ hal f sine wave 0 8. 3ms 1cyc le IF SM 3ms 2.8 3.2 D ongguan Nanjing Electronics Ltd. www.dgnjdz.com2/3 All data s heet.com
0.20 (5.12) 0.047 (1.20) 0.344 (8.73) 0.087 (2.22) Dimensionsininchesand(millimeters) .255(6.5) .335(8.3) 098(2.5) .406(10.3) .014(.35) .060(1.5) .205(5.2) .323(8.2) .047(1.2) .245(6.2) .307(7.8) .083(2.1) .394(10.0) .003(.08) .040(1.0) .195(5.0) .315(8.0) .037(0.95) ~ ~ D F-S .03 1(0.8) .024(0.6) D ongguan Nanjing Electronics Ltd. www.dgnjdz.com3/3 All data s heet.com