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/circle6 /circle6 /circle6 High Cur rent Capability /circle6 /circle6 /circle6 P l a s t i c M a t e r i a l – U L R e c o g n i t i o n F l a m m a b i l i t y M e ch a n i c a l D a t a /circle6 /circle6 Ter minals: Plated Leads Solderable per /circle6 P o l a r i t y : A s M a r k e d o n C a s e /circle6 Weight: 1.0 grams (approx.) /circle6 Mounting Position: Any /circle6 Marking: Type Number Maximum Rat ings and Electrical Characteristics @TA=25°C unles s otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Pea k Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Revers e Voltage VR(RMS) 35 70 140 280 420 560 700 V A verage Rec tified Output Current @T A = 40°C IO 1. 0 A Non-Repeti t ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward V oltage per element @I F = 1.0A VFM 1.1 V Pea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 125°C IRM 5.0 500 µA Ty pi cal Junction Capacitance per element (Note 1) C j 25 pF Ty pi cal Thermal Resistance per leg (Note 2) RθJA RθJL 15 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Mounted on PC board with 13mm 2 copper pad. 1 of 2 DF01SDF005S ! Lead Fr ee: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DF02S DF04S DF06S DF08S DF10S 2.15 3.40 9.30 10.30 6.20 6.50 7.40 7.90 ~ A D E L J SDIP Dim Mi n Max A B C 0.25 — D 0.08 0.33 E G 1.02 1.53 H 8.00 8.51 J K 5.00 5.20 L 0.90 1.20 All Di mensions in mm B G H K C Ca s e : SDIP, M o l d e d P l a s t i c Alldatasheet
DF005S – DF10S 2 of 2 0.01 0.1 1.0 I , INST ANTANEOUS FORWARD CURRENT (A) F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 11 0 1 00 I , P EAK FORWARD SURGE CURRENT (A) FSM NUM BE R OF CYCLES AT 60 Hz Fig. 3 Max No n-Repetitive Peak Forward Surge Curr ent Singl e half-sine-Wave (JEDEC Method) 100 1 10 100 C ,CAP ACITANCE (pF) J V , REVERSE VOL TAGE (V) Fig. 4 Typ Junction Capacitance (per element) R T = 25°c f =
1.0 Mhz
V = 50 mV p-p j sig 0.01 0.1 1.0 100 2004 0 6 0 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (µA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) T = 125°Cj T = 25°Cj DF005S - DF10S Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com T , AMBIENT T EMPERATURE (°C) Fig. 1 Output Current Derating Curve A 1.0 0.5 40 60 80 100 120 140 I , A VERAGE FORWARD CURRENT (A) (AV)