DF005S YIXIN | Alldatasheet
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DF005S – DF10S 1.0 A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Feat ures G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n G ! Low Forward Voltage Drop ! High Current Capability ! H i g h S u r g e C u r r e n t C a p a b i l i t y - Designed for Surface Mount Application B ~ ~ A D E ! Plastic Material – UL Recognition Flammability C l a s s i f i c a t i o n 9 4 V - O C /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01L H M e c h a n i c a l D a t a J ! Cas e: Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 K ! Polarity: As Marked on Case ! Weight: 0.38 grams (approx.) * Low profile models (J = 2.20~2.50mm) are available. ! Moun ting Position: Any P lease consult factory. Marking: Type Number M aximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol DF 005S DF 01S DF 02S DF 04S DF 06S DF 08S DF 10S Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR( RMS) 35 70 140 280 420 560 700 V A verage Rectified Output Current @T A = 40°C I O 1. 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 30 A Forward Voltage per element @I F = 1.0A V FM 1. 1 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @T A = 125°C IRM 500 µA Typical Junction Capacitance per element (Note 1) C j 25 pF Typical Thermal Resistance (Note 2) R/G01JA 11
0 K/W
Operating and Storage Temperature Range Tj, TST G -65 t o +150 °C Not 2. Thermal resistance junction to ambient mounted on PC board with 5.0mm2 (0. 03mm thick) land areas. DF Di m Min Max A 7. 40 7.90 B 6. 20 6.50 C 0. 009 0.25 D 0. 076 0.33 E — 10.40 G 1. 02 1.53 H 8. 13 8.51 J* 3. 20 3.40 K 5. 0 5.20 L 1. 00 1.20 A ll Dimensions in mm A ll data sheet.com
0.01 0.1 1.0 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 0 1 00 I , PEAK FORWARD SURGE CURRENT (A)FSM N UMBER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge C urrent Si ngle half-sine-Wave (JEDEC Method) 100 10 100 C , CAPACITANCE (pF) J V , REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) R T = 25°c f = 1.0 Mhz V = 50 mV p-p j sig 0.01 0.1 1.0 100 2004 0 6 0 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (µA)R PE RCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) T = 125°Cj T = 25°Cj 1.0 0.5 40 60 80 100 120 140 I , AVERAGE FORWARD CURRENT (A)(AV) T , AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve A Hz Resistive or Inductive load A ll data sheet.com
Product No.!! !! Packag e Type Shipping Quantity DF005S -T3 DIL Bridge SMD 1500/Tape & Reel DF005S DIL Bridge SMD 50 Units/Tube DF01S -T3 DIL Bridge SMD 1500/Tape & Reel DF01S DIL Bridge SMD 50 Units/Tube DF02S -T3 DIL Bridge SMD 1500/Tape & Reel DF02S DIL Bridge SMD 50 Units/Tube DF04S -T3 DIL Bridge SMD 1500/Tape & Reel DF04S DIL Bridge SMD 50 Units/Tube DF06S -T3 DIL Bridge SMD 1500/Tape & Reel DF06S DIL Bridge SMD 50 Units/Tube DF08S -T3 DIL Bridge SMD 1500/Tape & Reel DF08S DIL Bridge SMD 50 Units/Tube DF10S -T3 DIL Bridge SMD 1500/Tape & Reel DF10S DIL Bridge SMD 50 Units/Tube P roducts listed in bold are WTE Preferred devices. 3 suffix refers to a 13” reel. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. RECOM MENDED FOOTPRINT 0.06 M IN (1.52 MIN) 0.404 M AX (10.26 MAX) 0.047 M IN (1.20 MIN) 0.205(5 .2) 0.195(5.0) i nches(mm) W on-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. A ll data sheet.com