DF005S SAMYANG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- UL recognition, file #E313149
- Ideal for automated placement
- High surge current capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Mechanical Data
- Packa ge: DBS Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, Halogen free
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT DF005S DF01S DF02S DF04S DF06S DF08S DF10S Repetitive peak reverse voltage VRRM V 50 100 200 400 600 800 1000 Average rectified output current @60Hz sine wave, R-load, Ta=40℃ On glass-epoxi substrate IO A 1.0 Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ IFSM A 30 Current squared time @1ms≤t≤8.3ms Tj=25℃, Rating of per diode I t A2s 3.7 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT TEST CONDITIONS DF005S DF01S DF02S DF04S DF06S DF08S DF10S Maximum instantaneous forward voltage drop per diode VF V IFM=0.5A 1.00 Maximum DC reverse current at rated DC blocking voltage per diode IRRM μA VRM=VRRM 5 SAM YANG DF005S --- DF10SSAMYANG ELECTRONICS All d ata sheet.com
www.diode.co.kr ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT DF005S DF01S DF02S DF04S DF06S DF08S DF10S Thermal Resistance Between junction and ambient, On glass-epoxi substrate RθJ-A ℃/W 68.0 Between junction and lead RθJ-L 15.0 ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE DF005S ~ DF10S B1 Approximate 0.34 50 5000 20000 TUBE F1 Approximate 0.34 1500 3000 21000 REEL ■ Characteristics(Typical) 0 20 40 60 80 100 0.01 0.1 1.0 100 Tj=150℃ Tj=25℃ FIG4:Typical Reverse Characteristics Instantaneous Reverse Current (uA) Percent of Rated Peak Reverse Voltage (%) 0.2 FIG1:Io-Ta Curve 160 sine wave R-load free in air 40 80 120 0.4 0.6 0.8 1.0 1.2Average Forward Output Current (A) Ambient Temperature (℃) 0.01 0.02 0.05 FIG3: Forward Voltage 0.1 0.5 Ta=25℃ Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 2 5 10 20 50 100 half sine wave non-repetitive Tj=25℃ FIG2:Surge Forward Current Capability 0 8.3ms 1cycle IFSM 8.3ms 35Peak Forward Surge Current（A） Number Of Cycles SAM YANG DF005S --- DF10SSAMYANG ELECTRONICS DF005S ~ DF10S All d ata sheet.com
www.diode.co.kr ■ Outline Dimensions ■ Suggested pad layout Dim Min P1 8.73 P2 5.12 Q1 2.22 Q2 1.2 DBS Dim Min Max A 6.20 6.50 B 9.60 10.30 C 5.00 5.20 D 8.13 8.51 E 2.80 3.30 F 1.02 1.2 G 0.22 0.33 H 1.02 1.53 I 0.076 0.33 J 1.80 2.10 Dimensions in millimeters A B C D F G H I E J - + ~ ~ DBS Dimensions in millimeters SAM YANG DF005S --- DF10SSAMYANG ELECTRONICS All d ata sheet.com