DF005S DSK | Alldatasheet
Document overview
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Technical content
1.2± 0.3 0.3±0.1 1.2± 0.1 6.3± 0.2 8.3± 0.3 8.3± 0.1 2.6 ± 0.15 5± 0.2 6.4± 0.1 7.9± 0.2 10± 0.6 DF005S - - - DF10S
FEATURES
Ideal for printed circuit board Low forward voltage drop high current capability. Reliable low cost construction utilizing molded plastic technique results in inexpensive product The plastic material has UL flammability classification 94V-0 UL recognized file MECHANICAL DATA Polarity :As marked on Body Weight : 0.016 ounces,0.45 grams Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% DF-S DF10SDF08SDF06SDF04SDF02S DF005S DF01S CHARACTERISTICS SYMBOL 1000 700 1000 800 560 800 600 420 600 400 280 400 200 140 200 100 100 V RMS V DC V RRM IF (AV) I FSM V F A 40 C Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum forward Voltage at 1.0A DC 1.0 1.1 T J Operating Temperature Range -55 to +150 C T STG Storage Temperature Range -55 to +150 C Typical Thermal Resistance (Note 2) R 0JA C/W I R Maximum DC Reverse Current at Rated DC Blocking Voltage J =125 C J =25 C 500 µ A V A A V UNIT V V 10.4 A S I t I t Rating for fusing (t < 8.3ms) C J pFTypical Junction Capacitance per element (Note 1) NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal resistance from junction to ambient mounted on P.C.B with 0.5x0.5"(13x13mm) copper pads. SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.4 - TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT ,(A) 0.2 0.4 1.2 1.40 0.1 1.0 0.6 0.8 1.0 .01 1.81.6 T J = 25 C PULSE WIDTH 300us 2% DUTY CYCLE FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT NUMBER OF CYCLES AT 60Hz PEAK FORWARD SURGE CURRENT, AMPERES 1 5 10 50 1002 20 Single Half-Sine-Wave (JEDEC METHOD) FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 40 60 100 120 0.6 0.1 0.2 1.0 AMBIENT TEMPERATURE , C 0.8 0.4 140 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD FIG.3 - TYPICAL JUNCTION CAPACITANCE CAPACITANCE , (pF) REVERSE VOLTAGE , VOLTS 10.00.1 100 100 1.0 1.0 4.0 T J = 25 C, f = 1MHz INSTANTANEOUS REVERSE CURRENT ,(uA) 20 40 120 1400 0.1 1.0 100 60 80 100 0.01 T J = 25 C T J = 125 C FIG.5 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) DF005S - - - DF10S www.diode.kr Diode Semiconductor Korea