DF005S DAESAN | Alldatasheet

Document overview

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Technical content

Features

  • Glass Passivated Die Construction
  • Diffused Junction
  • Low Forward Voltage Drop, High Current Capability
  • Surge Overload Rating to 50A Peak
  • Designed for Surface Mount Application
  • Plastic Material - UL Flammability Classification 94V-0 Maximum Ratings And Electrical Characteristics
  • Case : Molded Plastic
  • Terminals : Solder Plated Leads, Solderable per MIL-STD-202, Method 208
  • Polarity : As Marked on Case
  • Approx Weight : 0.38 grams
  • Mounting Position : Any
  • Marking : Type Number (Ratings at 25¡É ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) CURRENT 1.0 Ampere VOLTAGE 50 to 1000 Volts DF -S Dim Min Max A 7.40 7.90 B 6.20 6.50 C 0.22 0.30 D 0.076 0.33 E 10.40 G 1.02 1.53 H 8.13 8.51 J 2.40 2.60 K 5.00 5.20 L 1.00 1.20 A ll Dimens ions in mm Notes: (1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. (2) Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse voltage Average Rectified Output Current @ TA=40 Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) VoltsForward Voltage (per element) @ IF=1.0 A VRMM VRWM VR

50 Volts

1.1VFM VRMS 1.0 Amp50IFSM Tj TSTG 500 -65 to +150 ¡É Amp Peak Reverse Current at Rated DC Blocking Voltage (per element) I2t Rating for Fusing (t<8.3ms) Typical Junction Capacitance per element (Note 1) Operating and Storage Temperature Range DF 005S DF 01S DF 02S DF 04S DF 06S DF 08S DF 10S 10.4 100 200 140 400 280 600 420 800 560 1000

700 Volts

¥ìA A2S ¡É/W pF Io IRM Cj I2t R¥èJA @ TA=25¡É @ TA=100¡É Typical Thermal Resistance, Junction to Ambient (Note 2) 40 A B C D E G H J L K

0.01 0.1 1.0 I , INST ANT ANEOUS FOR WARD CURRENT (A)F V , INST ANT ANEOUS FOR WARD VOL TAGE (V) Fi g. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fi g. 3 Max Non-Repetitive Peak Forward Sur ge Current Single half-sine-W ave (JEDEC Method) 100 1 10 100 C , CAP ACIT ANCE (pF)J V , REVERSE VOL TAGE (V) Fi g. 4 Typ Junction Capacitance (per element) R T = 25°c f = 1.0 Mhz V = 50 mV p-p j sig 0.01 0.1 1.0 100 200 40 60 80 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (µA)R PERCENT OF RA TED PEAK REVERSE VOL TAGE (%) Fi g. 5 Typ Reverse Characteristics (per element) T = 125°Cj T = 25°Cj 1.0 0.5 40 60 80 100 120 140 I , AVERAGE FOR WARD CURRENT (A)(AV) T , AMBIENT TEMPERA TURE (°C) Fi g. 1 Output Current Deratin g Curve A

60 Hz Resistive or

RATING AND CHARACTERISTIC CURVES DF005S THRU DF10S