DF005S COMCHIP | Alldatasheet
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Technical content
Features
Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Low forward voltage drop Glas passivated junction Mechanical data Case: Molded plastic, DF-S Terminals: solderable per MIL-STD-750, method 2026 Polarity: Marked on body Mounting position: Any Approx. Weight:1.0 gram SMD G enenal Purpose Bridge RectifierSMD G enenal Purpose Bridge Rectifier www.com chip.co m.tw COMCHIPCOMCHIP Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS V oltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 Ta=125 Max. Thermal Resistance (Note 1) Operating Junction T emperature Storage T emperature Symbol VRRM VDC VRMS IFSM I o V F I R R JA T j TSTG Maximum Ratings and Electrical Characterics Unit V V V A A V uA MDS0301001B Page 1 Note 1: Thermal resistance from junction to ambient. 1000 1000 700 600 600 420 400 400 280 100 100 1.0 1.1 -55 to +150 500 -55 to +150 DF005S DF01S DF02 S DF04S DF06S DF08S DF10S 800 800 560 200 200 140
40 C/W
C C C C Dimension in inches and (millimeters) DF-S 0.039(1.0) 0.205(5.2) 0.197(5.0) 0.347(8.8) 0.322(8.2) 0.134(3.4) 0.118(3.0) - +- + ~ ~ ~ ~ 0.047(1.2) 0.255(6.5) 0.245(6.2) 0.310(7.9) 0.290(7.4) 0.013(0.33) 0.003(0.08) 0.425(10.8) 0.400(10.2) 0.60(1.5) 0.40(1.0)
Rating and Characteristic Curves (DF005S thru DF10S) www.com chip.co m.tw COMCHIPCOMCHIP MDS0301001B Page 2 SMD G enenal Purpose Bridge RectifierSMD G enenal Purpose Bridge Rectifier Fig. 4 - Curren t Derating Curve Average Forward Current ( A ) Forward Current ( A ) Forw ard Vol tage ( V) Fig.2 - Fo rward C harac terist ics Peak Surge Forward Current ( A ) Fig. 3 - Non Re petiti ve Forw ard Surge Cur rent 1 5 10 50 1 00 Number of Cycles at 60Hz Single Phase Half wave 60Hz Resistive or inductive LoadAmbient T emperature ( C) Tj=25 C 8.3mS Single Half Sine Wave JEDEC methode Fig. 1 - Rev erse Ch aract eristi cs Reverse Current ( uA ) Percent of Rated Peak Reverse V oltage (%) 0 20 40 60 80 100 120 140 100 1.0 0.1 0.01 Tj=25 C 1.0 0.1 0.01 0 20 40 60 80 100 120 140 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 1.0 10 100 Fig. 5 - Typica l Juction C apac itanc e Capacitance ( pF ) 100 Reverse Voltage (V)