DF005 SAMYANG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- UL recognition, file #E313149
- High surge current capability
- Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Mechanical Data
- Package: DB Molding compound meets UL 94 V-0 flammabilit y rating, RoHS-compliant, Halogen free
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT DF005 DF01 DF02 DF04 DF06 DF08 DF10 Repetitive peak reverse voltage VRRM V 50 100 200 400 600 800 1000 Average rectified output current @60Hz sine wave, R-load, Ta=40℃ IO A 1.0 Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ IFSM A 30 Current squared time @1ms≤t≤8.3ms Tj=25℃, Rating of per diode I t A2s 3.7 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT TEST CONDITIONS DF005 DF01 DF02 DF04 DF06 DF08 DF10 Maximum instantaneous forward voltage drop per diode VF V IFM=0.5A 1.00 Maximum DC reverse current at rated DC blocking voltage per diode IRRM μA VRM=VRRM 5 + - SAM YANG DF005 --- DF10SAMYANG ELECTRONICS All d ata sheet.com
www.diode.co.kr ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT DF005 DF01 DF02 DF04 DF06 DF08 DF10 Thermal Resistance RθJ-A(1) ℃/W 68.0 RθJ-L 15.0 Note (1)Thermal resistance from Between junction and ambient, On glass-epoxi substrate . ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE DF005 ~ DF10 B1 Approximate 0.39 50 2500 10000 Tube ■ Characteristics (Typical) 0 20 40 60 80 100 0.01 0.1 1.0 100 Tj=150℃ Tj=25℃ FIG4:Typical Reverse Characteristics Instantaneous Reverse Current (uA) Percent of Rated Peak Reverse Voltage (%) 0.2 FIG1:Io-Ta Curve 160 sine wave R-load free in air 40 80 120 0.4 0.6 0.8 1.0 1.2Average Forward Output Current (A) Ambient Temperature (℃) 1 2 5 10 20 50 100 half sine wave non-repetitive Tj=25℃ FIG2:Surge Forward Current Capability 0 8.3ms 1cycle IFSM 8.3ms 35Peak Forward Surge Current（A） Number Of Cycles 0.01 0.02 0.05 FIG3: Forward Voltage 0.1 0.5 Ta=25℃ Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) SAM YANG DF005 --- DF10SAMYANG ELECTRONICS All d ata sheet.com
www.diode.co.kr ■ Outline Dimensions DB Dim Min Max A 6.20 6.50 B 7.60 8.90 C 5.00 5.20 D 8.13 8.51 E 0.46 0.58 F 2.80 3.30 G 0.22 0.33 H 3.81 4.69 I 1.39 1.90 J 1.27 2.03 K 0.89 1.14 L 7.24 8.00 Dimensions in millimeters B K H A L C D F E J I G DB SAM YANG DF005 --- DF10SAMYANG ELECTRONICS All d ata sheet.com