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Document overview
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Technical content
Features
- Maximum Surge Rating: I FSM = 85 A I2t = 30 A2Sec
- Optimized V F: Typical 0.93 V at 2 A, 25°C
- DF10S Socket Compatible
- Glass Passivated Junctions
- S p a c e S a v i n g
- Lead Free in Comply with EU RoHS 2002/95/EU Directives
- Green Molding Compound: IEC61249 Halogen Free
- Qualified with IR Reflow and Wave Soldering
Ordering Information
Part Number Top Mark Package Packing Method DF005S2 DF005S2 SDIP 4L Tape and Reel DF01S2 DF01S2 SDIP 4L Tape and Reel DF02S2 DF02S2 SDIP 4L Tape and Reel DF04S2 DF04S2 SDIP 4L Tape and Reel DF06S2 DF06S2 SDIP 4L Tape and Reel DF08S2 DF08S2 SDIP 4L Tape and Reel DF10S2 DF10S2 SDIP 4L Tape and Reel
Description
With the ever-pressing need to improve power supply efficiency, improve surge rating, improve reliability, and reduce size, the DFxS2 family sets a new standard in performance. The new design offers an improved surge rating of 85 A. This is especially important when striving to improve reli- ability and increase efficiency. High efficiency designs strive to reduce circuit resistance, which, unfortunately can result in increased inrush surge. As such higher surge current ratings can be required to maintain or improve reliability. The design also offers improved efficiency by achieving a
2 A V
F of 1.1 V maximum at 25 °C. This lower V F also supports cooler and more efficient operation. Finally, the DFxS2 achieves all this in a SDIP surface mount form factor, reducing board space and volumetric requirements vs. competitive devices.+ IN OUT SDIP
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
- The thermal resistances (RθJA & ψJL) are characterized with the device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2 PCB size: 76.2 x 114.3 mm. Heating effect from adjacent dice is considered and only two dices are powered at the same time. Figure 1. Maximum Pads of 2 oz Copper Figure 2. Minimum Pads of 2 oz Copper
DF005S2 - DF10S2 — Bridge Rectifier © 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com DF005S2 - DF10S2 Rev. 1.0.1 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage Drop per Bridge Element I F = 2.0 A 1.1 V IR DC Reverse Current at Rated DC Blocking Voltage TJ = 25°C3 μA TJ = 125°C 500 I2t Rating for Fusing (t < 8.3 ms) 30 A 2S CJ Junction Capacitance VR = 4.0 V, f = 1.0 MHz 23 pF
Figure 8. 4-LEAD, SDIP, 6.5 MM WIDE B. ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH AND TIE BAR PROTRUSIONS. G. DRAWING FILE NAME: MKT-SDIP04AREV4.
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