DESD3ZXX GWSEMI | Alldatasheet
Document overview
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Technical content
Features
150 Watts peak pulse power (tp = 8/20μs)
Transient protection for high speed data lines to IEC 61000-4-2 (ESD) ± 15kV (air), ± 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) Protects One Power or I/O Port Low leakage current Low operating and clamping voltages Solid-state silicon avalanche technology
Applications
Cell Phone Handsets and Accessories Microprocessor based equipment Portable Instrumentation Personal Digital Assistant (PDA) Maximum Rating @ Ta=25℃ unless otherwise specified Symbol Parameter Ratings Units PPK Peak Pulse Power (tp = 8/20μs) 150 Watts TL Lead Soldering Temperature 260(10sec.) ℃ TJ Operating Temperature -55 to +125 ℃ TSTG Storage Temperature -55 to +150 ℃ xx-SERIES DESD3Z TVS Diode SOD-323 Electrical Characteristics@ Ta=25℃ unless otherwise Parameter Marking VRWM @IR VBR@ImA VC@1A VC@IPP CJ V µA V V V A pF MAX MIN MAX MAX MAX DESD3Z 3V3 3.3 1 4.6 9.8 14 8 120 5 1 5.8 11.8 15 8 100 DESD3Z 5.0 5C, 3M C3, 5B 12 1 13.3 19 25 6 70 15 1 16.5 24 33 5 50 24 1 26.1 44 54 3 30 6/9, 12M L M, 24M DESD3Z 12 DESD3Z 15 DESD3Z 24
Typical Characteristics@ Ta=25℃ unless otherwise specified xx-SERIES DESD3Z
Plastic surface mounted package; 2 leads SOD-323 PACKAGE OUTLINE