DEMO-VMMK3413-42 BOARDCOM | Alldatasheet

Document overview

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Technical content

Features

  • 1 x 0.5 mm surface mount package
  • Ultrathin (0.25 mm)
  • Wide frequency range: 25 to 45 GHz
  • Wide dynamic range
  • Low Insertion loss
  • Directivity: 10 dB typ.
  • In and output match: 50 ohm Specifications (35 GHz, Vb = 1.5 V, Zin = Zout = 50 Ω)
  • Bias Current: 0.16 mA typical
  • Insertion Loss: 0.8 dB
  • Detector output offset voltage: 63 mV typical
  • Detector Output voltage at +20 dBm: 674 mV typical

Applications

  • Point-to-Point Radio
  • Monitoring Power Amplifier Output Power
  • Power Control Loop Detector UY UY Output/ Vdet Input/ Vbias Input/ Vbias Output/ Vdet Detector

Table 1. Absolute Maximum Rating (1)

  1. Operation of this device above any one of these parameters may cause permanent damage
  2. With the DC (typical bias) and RF applied to the device at board temperature, Tb = 25° C

Table 2. DC and RF Specifications

  1. Measured data obtained from wafer-probing, losses from measurement system de-embedded from final data, Vbias = 1.5 V applied through a
  2. Measured by reversing the detector and applying RF power to the output port. Directivity is defined as the difference in dB between the power

applied in the forward direction and the power required in the reverse direction to produce the same Vdet voltage.

  1. Voffset is measured with RF input power turned off.
  2. Vdet is measured with +12 dBm RF input power at 35 GHz.

Product Consistency Distribution Charts at 35 GHz, Vbias = 1.5 V Ibias: Mean = 0.16 mA, LSL = 0.1 mA, USL = 0.23 mA Voffset: Mean = 63 mV, LSL = 50 mV, USL = 80 mV Vdet_On @ Pin = +12 dBm: Mean = 674 mV, LSL = 550 mV, USL = 790 mV Notes: Distribution data sample sized is based on at least 57 Kpcs taken from MPV lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 70 8050 60 LSL USL 800600 700 LSL USL LSL USL

S-parameter data obtained using 300 mm G-S-G probe substrate; bias was brought in via broadband bias tees. Power vs. Vdet data obtained using CPW PCB (Fig. 8). Losses calibrated out to the package reference plane. Figure 1. Vdet vs. Input Power Figure 2. Insertion Loss vs. Frequency Figure 3. Input Return Loss Figure 4. Output Return Loss Figure 5. Pin vs. Vdet Over Temperature at 42 GHz Figure 6. Pin vs. Vdet Over Vbias at 42 GHz

25 GHz

35 GHz

45 GHz

Typical Scattering Parameters Data obtained with 300 mm G-S-G probing on 0.016 inch thick PCB substrate, broadband bias tees, losses calibrated out to the package reference plane. TA = 25° C, Zin = Zout = 50 Ω. Freq GHz S11 S21 S12 S22 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase

the device for it to produce low loss in the “through” mode. be cover later in the application section. Output ports. Figure 7 shows a simple biasing circuit.

2 DC blocking caps, C1 and C2, on the input and output

Figure 7. Biasing the VMMK-3413 Detector Module where Vb is the supply voltage. 63 mV offset voltage appears at the detected output port. optimized for the desired Vout vs. RF input curve. 45 MHz – 50 GHz Bias Networks (HP 11612B) were used. Figure 8. VMMK-3413 Characterization Board

The S-parameters are measured on a 0.016 inch thick RO4003 printed circuit test board, using 300 mm G-S-G (ground signal ground) probes. Coplanar waveguide is used to provide a smooth transition form the probes to the device under test. The presence of the ground plane on top of the test board results in excellent grounding at the device under test. A combination of SOLT (Short – Open – Load – Thru) and TRL (Thru – Reflect -–Line) cali - bration techniques are used to correct for the effects of the test board, resulting in accurate device S parameters Package and Assembly Notes For detailed description of the device package and assembly notes, please refer to Application Note 5378.

Ordering Information

VMMK-3413-BLKG 100 Antistatic Bag VMMK-3413-TR1G 5000 7” Reel Package Dimension Outline Reel Orientation Device Orientation Dimensions Symbol Min (mm) Max (mm) E 0.500 0.585 D 1.004 1.085 A 0.225 0.275 Note: All dimensions are in mm A E D TOP VIEW END VIEW

  • UY
  • UY
  • UY
  • UY 8 mm 4 mm USER FEED DIRECTION Notes: “U” = Device Code “Y” = Month Code ESD Precautions Note: These devices are ESD sensitive. The following pre - cautions are strongly recommended. Ensure that an ESD approved carrier is used when die are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. For more detail, refer to Avago Application Note A004R: Electro- static Discharge Damage and Control USER FEED DIRECTION CARRIER TAPE REEL

For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. AV02-2917EN - December 26, 2012 Notice: 1. 10 Sprocket hole pitch cumulative tolerance is ±0.1 mm. 2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole. 3. Ao & Bo measured on a place 0.3 mm above the bottom of the pocket to top surface of the carrier. 4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier. 5. Carrier camber shall be not than 1 m per 100 mm through a length of 250 mm. Unit: mm Symbol Spec. K1 – Po 4.0±0.10 P1 4.0±0.10 P2 2.0±0.05 Do 1.55±0.05 D1 0.5±0.05 E 1.75±0.10 F 3.50±0.05 10Po 40.0±0.10 W 8.0±0.20 T 0.20±0.02 Note: 2 Note: 1 PoDo B B Note: 2 E F W A A P1 D1 R0.1 Ao 5° (Max) Scale 5:1 A/uniF6BBA SECTION Ao = 0.73±0.05 mm Bo = 1.26±0.05 mm Ko = 0.35 +0.05 mm Scale 5:1 B/uniF6BBB SECTION 5° (Max) Bo Ko T Tape Dimensions