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Technical content

Features

/g120/g34.0 x 4.0 x 0.85 mm3 16-lead QFN /g120/g3Low noise figure /g120/g3High linearity performance /g120/g3GaAs E-pHEMT Technology[1] /g120/g3Low cost small package size: 4.0x4.0x0.85 mm3 /g120/g3Excellent uniformity in product specifications /g120/g3Tape-and-Reel packaging option available Specifications 850MHz; 5V, 50mA (typ) per section /g120/g317.7 dB Gain /g120/g30.4 dB Noise Figure /g120/g311.8 dBm Input IP3 /g120/g318.3 dBm Output Power at 1dB gain compression

Applications

/g120/g3Low noise amplifier for cellular infrastructure for GSM and CDMA. /g120/g3Other ultra low noise application. Note: Package marking provides orientation and identification “16516” = Device Code “YYWW“ = Year and Work Week “XXXX” = Last 4 digit of Device Lot Number Pin 1 GND Pin 2 Pin 3 Pin 4 Pin 8 Pin 7 Pin 6 Pin 5 Pin 12 Pin 11 Pin 10 Pin 9 Pin 13 Pin 14 Pin 16 Pin 16 16516 YYWW XXX BOTTOM VIEWTOP VIEW

[1] [4] [3] [2] [9] [5] [12] [11] [10] [13][8] [7] [6] [16] [15] [14] Pin Use

1 Not Used

2 Not Used

3 Not Used

4 Not Used

5 RFin1

6 Not Used

7 Not Used

8 RFin2

9 Not Used

10 Not Used

11 Not Used

12 Not Used

13 RFout2

14 Not Used

15 Not Used

16 RFout1

Note: /g120/g3Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Simplified Schematic L1 L2 Ca7 Ca5 C1 C2 Ca11 Ca9 Ra1 Ra4 RFin a RFout a C3RFin b Rb1Cb5 Cb7 C4 RFout b Cb9 Cb11 Rb4 Vdd1 Vdd2Vgg2 Vgg1 [1] [4] [3] [2] [9] [5] [12] [11] [10] [13][8] [7] [6] [16] [15] [14] Ra7 Rb7 Pin Configuration

Absolute Maximum Rating [2] TA = 25°C Symbol Parameter Units Absolute Max. Vdd Device Voltage, RF output to ground V 5.5 Vgg Gate Voltage V 1 Pin,max CW RF Input Power (Vdd = 5.0, Id=50mA) dBm 15 Idd Device Current, RFout to ground per channel mA 100 Pdiss Total Power Dissipation [4] W1 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance [3] (Vdd = 5.0V, Idd = 50mA per channel), /g84jc = 49.4°C/W per channel Notes: 2. Operation of this device in excess of any of these limits may cause permanent damage. 3. Thermal resistance measured using Infra-Red Measurement Technique with both channels turned on hence I dd_total=100mA. 4. Power dissipation with both channels turned on. Board temperature T B is 25°C. Derate at 20mW/°C for TB>100°C. Electrical Specifications [7-10] RF performance at TA = 25°C, Vdd 5V, Idd = 50mA, 850MHz and 900MHz given for each RF channel, measured on demo board in Figure 5 with component list in Table1 for 850 MHz matching. Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. Vgg Operational Gate Voltage, I dd = 50mA V 0.38 0.48 0.63 Gain Gain 850 dB 17.7 900 dB 15.8 17.4 18.8 IIP3 [8] Output Third Order Intercept Point 850 dBm 11.8 900 dBm 10.5 12.4 NF [9] Noise Figure 850 dB 0.40 900 dB 0.41 0.70 OP1dB Output Power at 1dB Gain Compression 850 dBm 18.3 900 dBm 19.3 IRL Input Return Loss, 50/g58 source 850 dB 8.9 900 dB 7.0 ORL Output Return Loss, 50/g58 load 850 dB 3.3 900 dB 4.7 REV ISOL Reverse Isolation 850 dB 29.9 900 dB 29.5 ISOL1-2 Isolation between RFin1 and RFin2 850 dB 45 900 dB 45 Notes: 7. Measurements at 850 MHz and 900 MHz are obtained using demo board described in Figure 5. 8. IIP3 test condition: a. F RF1 = 850 MHz, FRF2 = 851 MHz with input power of -15dBm per tone. b. F RF1 = 900 MHz, FRF2 = 901MHz with input power of -15dBm per tone. 9. For NF data, board losses of the input have not been de-embedded. 10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details.

MGA-16516 Typical Scattering Parameters, Vdd=5V, Idd=50mA Freq GHz S11 S21 S12 S22 Figure 32. [1] [4] [3] [2] [9] [5] [12] [11] [10] [13][8] [7] [6] [16] [15] [14] RFout reference planeRFin reference plane

Part Number Ordering Information Part Number No. of Devices Container MGA-16516-BLKG 100 Antistatic Bag MGA-16516-TR1G 3000 Tape/reel Typical Noise Parameters, Vdd=5V, Idd=50mA Freq GHz Fmin /g42opt /g42opt Rn/50dB Mag. Ang. Notes: 1. The Fmin values are based on noise figure measurements at 100 different impedances using Focus source pull test system. From these measurements a true Fmin is calculated. 2. Scattering and noise parameters are measured on 0.010 inch thick ROGER 4350. The input reference plane is at the end of the RFin pin and the output reference plane is at the end of the RFout pin as shown in Figure 32. 3. S2P file with scattering and noise parameters for biasing 3V 50mA, 3.5V 50mA, 4V 50mA, 4.5V 50mA, 5V 40mA, 5V 50mA and 5V 60mA are available upon request. Notes: 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold ash and metal burr. TOP VIEW SIDE VIEW BOTTOM VIEW 4.00 ± 0.10 4.00 ± 0.10 Pin 1 Dot by marking 0.203 Ref. 0.00 - 0.05 0.85 ± 0.10 2.70 ± 0.05 Exp.DAP PIN #1 IDENTIFICATION CHAMFER 0.30 x 45º 1.95 Ref. 0.30 ± 0.05

0.65 Bsc

2.70 ± 0.05 Exp.DAP 0.40 ± 0.05

PCB Land Pattern and Stencil Design Notes: 1. All dimensions are in millimeters. 2. 4 mil stencil thickness recommended Land Pattern Stencil Opening Combination of Land Pattern & Stencil Opening 0.65 2.70 4.00 0.40 0.30 2.70 4.00 0.65 0.36 0.27 2.16 3.96 2.16 3.96 2.16 2.70 2.16 2.70 4.00 3.96 0.27 0.30 0.40 0.36 0.65

12.00 +0.30/-0.10 8.0 ±0.10 4.0 ±0.10 2.00 ±0.05 5.50 ±.05 1.75 ±0.10 ∅ 1.50 + .10 .279 ±0.02 10º MAX. 10º MAX. 1.13 ±0.10 Ao Ko Bo + + + + ∅ 1.50 +0.25 USER FEED DIRECTION TOP VIEW END VIEW USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL 16516 YY WW XXXX 16516 YY WW XXXX 16516 YY WW XXXX

A F B ØD ØE SIDE VIEW ARBOR HOLE G BACK VIEWFRONT VIEW TAPE SLOT PLANE VIEW TAPE WIDTH 12mm A MAX 18.00 B +1.5–0.0 12.4 Note: Surface resistivity to be <1012 Ohms/square ±0.5 4.40 ØD ±0.5 55.0 SPECIFICATION ØE (max) 178 F (min) 1.50 ØH (min) 20.20 ØG ±0.2 13.50

For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2010 Avago Technologies. All rights reserved. AV02-1980EN - August 13, 2010 Reel Dimension - 13 Inch ESD Label (See Below) RECYCLE SYMBOL DETAIL “X” M EMBOSSED LINE X2 90.0mm length LINES 147.0mm AWAY FROM CENTER POINT EMBOSSED ‘M’ 5.0mm height FRONT VIEW 16.40” MAX. SLOT 5.00±0.50 11.90–15.40** 13.20±0.50* 0331.50 MAX. 0100.00±0.50 RECYCLE SYMBOL DETAIL “X” M BACK VIEW DETAIL “X” Ø13.0 Ø20.2 (MIN.) 2.00±0.5 +0.5 –0.2