DEMD48

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 4

Technical content

Features

  • Epitaxial Planar Die Construction
  • Surface Mount Package Suited for Automated Assembly
  • Simplifies Circuit Design and Reduces Board Space
  • Lead Free/RoHS Compliant (Note 1)
  • "Green" Device (Note 2) Mechanical Data
  • Case: SOT-563
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020C
  • Terminals: Finish ⎯ Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Marking Information: See Page 4
  • Ordering Information: See Page 4
  • Weight: 0.005 grams (approximate) Reference Device Type R1(Nom) R2(Nom) Q1 NPN 47kΩ 47kΩ Q2 PNP 2.2 kΩ 47kΩ SOT-563 NEW PRODUCT 312 R2 47k 47k 2.2k 47k Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 300 mW Thermal Resistance, Junction to Ambient Air (Note 3) RθJA 417 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Maximum Ratings, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 10 V Input Voltage VIN -10 to +40 V Output Current (DC) IO 100 mA Peak Collector Current ICM 100 mA Maximum Ratings, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -10 V Input Voltage VIN -12 to +5 V Output Current (DC) IO -100 mA Peak Collector Current ICM -100 mA Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS31224 Rev. 4 - 2 2 of 4 www.diodes.com DEMD48 © Diodes Incorporated Electrical Characteristics, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Cut-Off Current ICBO - - 100 nA VCB = 50V, IE = 0A Collector-Emitter Cut-Off Current ICEO - - 1 50 μA VCE = 30V, IB = 0A B VCE = 30V, IB = 0A, TB A = 150°C Emitter-Base Cut-Off Current IEBO - - 90 μA VEB = 5V, IC = 0A VI(off) - 1.2 0.8 V VCE = 5V, IO = 100μA Input Voltage VI(on) 3 1.6 - V VCE = 0.3V, IO = 2mA Collector-Emitter Saturation Voltage VCE(SAT) - - 0.15 V IC/IB = 10mA/0.5mA NEW PRODUCT B DC Current Gain hFE 80 - - - VCE = 5V, IC = 5mA Input Resistance R1 33 47 61 kΩ - Resistance Ratio R2/R1 0.8 1 1.2 - - Collector Capacitance CC - - 2.5 pF VCB = 10V, IE = 0, f = 1MHz Electrical Characteristics, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Cut-Off Current ICBO - - -100 nA VCB = -50V, IE = 0A Collector-Emitter Cut-Off Current ICEO - - -1 -50 μA VCE = -30V, IB = 0A B VCE = -30V, IB = 0A, TB A = 150°C Emitter-Base Cut-Off Current IEBO - - -180 μA VEB = -5V, IC = 0A Collector-Emitter Saturation Voltage VCE(SAT) - - -0.1 V IC/IB = -5mA/-0.25mA B DC Current Gain hFE 100 - - - VCE = -5V, IC = -10mA Input Resistance R1 1.54 2.2 2.86 kΩ - Resistance Ratio R2/R1 17 21 26 - - Collector Capacitance CC - - 3.0 pF VCB = -10V, IE = 0, f = 1MHz 100 1,000

DS31224 Rev. 4 - 2 3 of 4 www.diodes.com DEMD48 © Diodes Incorporated 100 1,000 0.01 0.1 NEW PRODUCT

DS31224 Rev. 4 - 2 4 of 4 www.diodes.com DEMD48 © Diodes Incorporated Ordering Information (Note 4) Device Packaging Shipping DEMD48-7 SOT-563 3000/Tape & Reel NEW PRODUCT Marking Information D48 YM D48 = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September Date Code Key Year 2007 2008 2009 2010 2011 2012 Code U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm A M L B C H K G D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. Diodes Incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.