NTE490 NTE | Alldatasheet
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N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Drain–Source Breakdown Voltage V(BR)DSS VGS = 0, ID = 100µA 60 90 – V Gate Reverse Current IGSS VGS = 15V, VDS = 0 – 0.01 10 nA ON Characteristics (Note 2) Gate Threshold Voltage VGS(Th) VDS = VGS , ID = 1mA 0.8 2.0 3.0 V Static Drain–Source ON ResistancerDS (on) VGS = 10V, ID = 200mA – 1.8 5.0 Ω Drain Cutoff Current ID(off) VDS = 25V, VGS = 0 – – 0.5 µA Forward Transconductance gfs VDS = 10V, ID = 250mA – 200 – mmhos Small–Signal Characteristics Input Capacitance C iss VDS = 10V, VGS = 0, f = 1MHz – – 60 pF Switching Characteristics Turn–On Time ton ID = 200mA – 4 10 ns Turn–Off Time toff ID = 200mA – 4 10 ns Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.021 (.445) Dia Max D G S Seating Plane .135 (3.45) Min .100 (2.54) .050 (1.27) .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max .210 (5.33) Max .500 (12.7) Min .165 (4.2) Max