DE5SC4M_10 SHINDENGEN | Alldatasheet
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Twin Diode Schottky Barrier Diode MSW OUTLINE Weight 0326¢(Typ) 40V 5A pre esMn esun : © Prrsm7\\SYY IERIE © Prasu Rating wine (tr 7 @ WAR RSE # High to Rating-Small-PKG peo. Sot BRIA) 58C4 SAPS , See (BA) —f-% CAA F IRE © Switching Regulator Cimane 1] eDU/DEIN\\—-9 © UU/UG Converter . () 2 ) i © RB, F—L. OARZE ~—@ Home Appliance, Game, Office Automation 1 e) 265 © 3B. 71K—9 DIVRRE— © Communication, Portable set : DIMI UCR Web +4 PLE CRMMNRL—RI) & SBME F Sv %, SRIDZERIS OUT SRL CaS FS For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection”. MER RATINGS @%83tR ALK Absolute Maximum Ratings (HOUMA Te =25C) a) RE | 4% & th % Mu Item Symbol] Conditions Wie DESSC4M Unit terrae = Siig ennai CB Py i A mabitil 7 \\ RD BLUR Vee TOV AWD Sirs, duty 7/40 1 Repetitive Peak Surge Reverse Vollage VERSM | pulse width Ome, duty 1/40 45 V SoHe si, SLE Hi mage Te 3 HSH Average Rectfied Forward Curent oO TAT) Dilys it H Me bore = AR — 2 Irs SOH2 ELIE, IFAD ELIA A & Dae A BU, T]= 125°C 8U A Peak Surge Forward Current *M_|_50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125°C ROELEAR aa P, VAMOS, ILM) 5 T=25U W Repetitive Peak Surge Reverse Power ARSM | Pulse width 10ps, Per diode, Tj= 25°C @ BAF Electrical Characteristics (HOVIMA Te =25C) MLE = RAW, WEED OBER 7 ata Wtage Te=25A, _pucermessurchent porate V td Fak 2 AME, LET Y OR Ase cure Le | Ve=Viw fermeienet oreo | MAX | mA Reet j It Te-10V, RED OMIM 5 an Gic_| sanction to case MAX 12 cw ermal Resistance WRT VN, 10 SF I | ia | Hietirilitbent amnramoae | MAK S| 102 (582-1) www.shindengen.co.jp/productisemi!
Center Tap Common Cathode DE5SC4M M$t4E] CHARACTERISTIC DIAGRAMS mR MRDRAAR CARY SRR Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability TS " Teese |e" ees a Ho 2 PSHE |S FSSC YA. 2 o UIT |e Rechts) |2 Ect Sms SSS Saeeeereteted | WAP Eee] | 2 gh Pt 2 ear] | 8 i | 5 il (verge) CoP TCI |e GSH | 6 Othe
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Be we | nae | Case Temperature Te (°C) Ambient Temperature Ta (‘C) Operation Junction Temperature Tj CC) ROBLEARY-TPRAHE Repetitive Surge Reverse Power Capability a ve SU SSS Seen Sut : ih a G5 Ww Tw % Sine wave (t SOll2 CHM LTV EF Huse Wesel STMAMONME RM Reo BD Et ‘Typical is a statistical average of the device's ability. www.shindengen.co.jp/productisemi/ (se) 103