DE3S6M_10 SHINDENGEN | Alldatasheet

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Single Diode Schottky Barrier Diode MSW OUTLINE Weight 0326¢(Typ) 60V 3A [ esun esmn : © Prrsm7\\SYYIEREE © Prasu Rating aeiae (tr 7 @ WAR RSE # High to Rating: Small-PKG ‘ype Nos if omits) | 3S6 aan is - SAPS , seems (om) | __—}- 01 eA F VIER © Switching Regulator Camane Wy *DU/DE AI\\-F ® DU/DU Converter ” () 2) ) i © RB. F—L. OARZE ~—@ Home Appliance, Game, Office Automation 1 &) 265 © 5B —9 FARES * Communication, Portable set a = AGEN OU CLEA TEWeb HA LE CRAKE) BM F Sv %, SRIDZEARIS OUT SRL CRS FS For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection”. MRR RATINGS @%3tR ALK Absolute Maximum Ratings (HOUMA Te =25C) HOH GS ae ih & He Item Symbol] Conditions Wie DESSEM Unit terrae = Sage ennai ed ee iM ; A MaitiD 7, \\ RO LEAT TE Vi Tov ADSms, duty 1/40 Vv Repetitive Peak Surge Reverse Voltage) Y®RSM | pulse width 0.5ms, duty 1/40 pacaie 2 37 NI Ha tite To | SOHa TEBE, Sebi A = Onielumina substrete A Average Rectfied Forward Current 5OHz sine wave, Resistance load = [ewe EAR — 2 Irs SOs Ski, IRD LAR To eat AA, T]= 125T. 8U A Peak Surge Forward Current *M_|_50Hz sine wave, Non-repetitive 1 cycle peak value, Tj= 125°C RO RLE LR ae AWAD US, T}= 25 7 @BAA FAI Electrical Characteristics (HOVIMA Te =25C) MULE =9 700 Ais r wes i Pe RWW so | Rita ase MAX 12 cow Thermal Resistance ja | RCE RIMM, Tv 5 FBC MAX 55 72 (882-1) www.shindengen.co.jp/productisemi!

MStE1 CHARACTERISTIC DIAGRAMS MRE RRDRAHR CARY TART Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability 5 — ret =o sf fsesiasssiaaes ase 1S SES| Seer 2 wll Vee je pee) | 2 Eat eee 6 (ESS eee |g Does Jeg 2 ee | 8 See eg Ss ee fee] 8 ae ERS asi |e Eee e rahe 4 Ep aaney 2 EES yoo) |B ee S UAT TTT J pee | |e SRS 2 lee aamaa| ||| 4 ESEsssrere/7e7acceseScsee| || S| — arrest eet § FSaA oe cae SS |e Ee | & a

6 A el retoorvy LEE) | SEES | oe eat FPN

SMTP seeertrarr| | 8 (Ea |e ae | EE eH ert tet |S El R/AIMMRMINMMcococe)| |) Pose sssceeeeevea| 1) SCE SESE Forward Voltage Vr (V) Average Rectified Forward Current lo (A) Number of Cycles. (cycle) ARE PRDRAAR #088 rpc) Current perce Power Dissipation Coen Capacitance PF FT, 1. | 7 4 0: DUET f=1Miz] ed fe PCT ee S 18! p= TOOT oy = Se ee eee Toor oc = | & SSS Se nie Haat ee Aa SCOUT MIL Bf ry ed] + (SS SSecce | gigieaa /c|) Om M SO e|-} [|] 1-2 LEE 7 Fer a _1 6 POC SSS Se esse z —— 2 VU tH 2 eos (=asaau |) roaaval) IR = a 5 2 SOOT SIN meen J eee YT CITT =e) deter | 0 er eT) ee rT Ogre ae > Reverse Voltage Vr (V) Reverse Voltage Vr (V) Reverse Voltage Vr (V) Tabv-74yF7A-F Tele FEE Tav—-T4v FAT Tew POBLEARY-VERARYS Derating Curve Teo Sai, | Dovating Curve Taro Repettve Surge Reverse Power Derating Curve 2 facrrniere len) |e | FP Ox alin sisurte oooh ae PESUSSSSSSSI Fett eerveettcaztiad| |e) CU ee ee St THosiefs/* \\ pp mn nseer rere tee Sec @ HANG ola sp FBS HRGH ERG HEE EE EaEA OREDEES |) (C90 peat daca veateageial ies STEHTPE NEE itt fit itt | EGE SSSECE |p ENoe g N gS SEES] | PPR usr] |g ect Sy 2 beePEHSSTENNNHE] | § Seca Hite | SHRHRNEEL TBE

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% f(a BSED ERESERSEESEEEEAN\\ NACE % RSS TCT NTT p SuRn ENE GRERE EERE SERERD SOUR Pe Ce TNE] | PETTBRAAINNINE] | PSST EESTESSEEE EES <~ eee SEE] | <I FANG NBN EEE] Se ee ee ee ee ee | (Cee et et ee ee aa) Case Temperature Te (°C) ‘Ambient Temperature Ta (°C) Operation Junction Temperature Tj (°C) ROBLUARY RHE Repetitive Surge Reverse Power Capability a ve @ cot—r-+t ee

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£ HIN oh} AI || L HULL ULI eer Sees Fi Ho aT z Hiatt NE G5 0 70 % Sine wave (t 5012 CM LTV EF Pulse Width tp (1s) + 5OHz sine wave is used for measurements. Tnnlubaasne RL coe t eET + Semiconductor products generaly have characteristic vation. ‘Typical is a statistical average of the device's ability. wwwshindengen.co.jp/productisemi! ws 73