DE3L20U SHINDENGEN | Alldatasheet
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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONS (Unit : mm) RATINGS SHINDENGEN Case : E-pack APPLICATION SMT Low noise trr35ns
FEATURES
Switching power supply DC/DC converter Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions RatingsUnit Storage Temperature Tstg -55\`150 Operating Junction TemperatureTj 150 Maximum Reverse VoltageVRM 200 V Average Rectified Forward CurrentIO 50Hz sine wave, R-load, Tc=113 3 A Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=2560 A Electrical Characteristics (If not specified Tc=25) Item Symbol Conditions RatingsUnit Forward Voltage VF IF=3A, Pulse measurement Max.0.98V Reverse Current IR VR=VRM , Pulse measurement Max.10 ÊA Reverse Recovery Time trrIF=0.5A, @IR=1A Max.35 ns Thermal Resistance Æjcjunction to case Max.12/W Super Fast Recovery Rectifiers Single
0.1 DE3L20U Tc=150°C [MAX] Tc=25°C [MAX] Pulse measurement per diode Tc=150°C [TYP] Tc=25°C [TYP] Forward Voltage V F [V] Forward Current I F [A]
T D=tp/T 0 1 2 3 4 5 DE3L20U 0.3 Forward Power Dissipation Tj = 150°C SIN 0.2 0.1 D=0.8 DC 0.5 0.05 Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
T D=tp/T 0 20 40 60 80 100 120 140 160 DE3L20U 0.3 Derating Curve VR = 200V SIN 0.2 0.1 D=0.8DC 0.5 0.05 VR Ambient Temperature Ta [ °C] Average Rectified Forward Current I O [A] Alumina substrate Alumina base Soldering land (leads) 1.5mm × 2.5mm Soldering land (heatsink) 7mm φ Conductor layer 20 µm Substrate thickness 0.64mm
T D=tp/T 0 20 40 60 80 100 120 140 160 DE3L20U 0.3 Derating Curve VR = 200V SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Case Temperature Tc [ °C] Average Rectified Forward Current I O [A]
Peak Surge Forward Capability 100 1 10 100 DE3L20U 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied
Reverse Voltage VR [V] Junction Capacitance Cj [pF] f=1MHz Tc=25°C TYP per diode