DE10S3L_10 SHINDENGEN | Alldatasheet
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Single Diode Schottky Barrier Diode MS OUTLINE Weight 0.326g(Typ) | 30V_10A i ST oe ie °SMD SMD | | Ti=150C © Tj=150°C eal cCiy 2 © Vr=0.45V © Low Vr=0.45V P Ne @Pansm7\\SYY TAREE © Pars Rating wane \\IOS3) | oe \\QKBASE © High lo Rating: Small-PKG Y—~95] 3 See CA) eel MainUse caine OH OA VF VIER © Switching Regulator i 3 1265 | eDC/DCIYI\\-F DC/DC Converter © RA. 7—L, OAR == @ Home Appliance, Game, Office Automation © 8. K—Y F)LHBE = © Communication, Portable set SHERI OUTS BATE Web 4 bh MIE (9 4 A— KAY OT TO, ZSME Sv>, PAIZO ICO UT SHR UER SE CME FS vo, For details of the outline dimensions, refer tc our web site or the dode technical data book. As for the marking, refer to the sp2cification “Marking, Terminal Connection". Mew RATINGS @iEXHRATK Absolute Maximum Ratings (##OeG Te =25C) ROA ms |e F ih Fe rr Item Symbol] conditions Type No. DE10S3L iver fetria —55~ SEF anperoure a tr AE ‘ Cc AGU ETE , 0 BLAS ME 200 Aliil.Sms, duty 1/40 HDD it ik SOHz EGE, BLU, Te = 124C A Average Rectified Forward Current oO 50Hz sine wave, Resistance load, Te=124°C ABT — SNA HE, ‘SOHz iF aa, JED ML 4 7 Ae, T]=25T PY LEA MY — EI 20M 2.1610 ws, Tj = 25'C a @BAN HHH Electrical Characteristics (HOU Te = 25°C) MARE 290 2 ise " , Hrd Votege Tr=BA._ filkereesuement V AE Faw ae RF, 2M 2 WG OBR ectence f=1MHz, Ve=10V TYP. 640 pF Rati =, | eerie 7 — A — Fret Restance MAX 40 caw KCRHASE RAKROLOCSHVELICERTSCEHHVET. 4k All specifications are subject to change without notice. 40 (832) www:shindengen.co.jp/product/semi!
M$t4E1 CHARACTERISTIC DIAGRAMS Tare ror) ee Forward Voltage Forward Power Dssipation Peak Surge Forward Current Capability Seo eee 8 poppy 0— 7 FC | ee Je eee ae fered eR or ezesberscavati; Se
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§: HA Cee | UPA rime [[[[[] | ESR eer cy |e Sd BO EEERESERSS r= cas EEEFEA| é pSeateia1 67535257 caetbeseasesta=s| ||] ———=. —— care bop ar mentee) |@ ee a ee one ATL comand] | Legare) | =e ai P [festSztzscssassstesseesses=ss==:| || | ——S/cet ee Ea ae a ae a a a a a a a Forward Voltage Vr (V] Average Rectified Forward Current Io (A) Number of Cycles [cycle] BARE BONAR #oam Reverse Current Reverse Power Dissipation Junction Capacitance “EEE |, Peo aay | An eee Hey = ie ok ctecd PE af Eo REE | MO CT ¢ E/E fname TT 2 mel Er fe as tH |e N = ae G-fipe cman GOUGGLOGRUGRORAGEQGUGD /27/6ipuu( 0) (Dood eee rere ere ees oa oe 22S Saran | yyy | A : 2S SS |: WAS | al A i SSS | | nema ca | ered Ve UMN LI UI) aS ae Hime eeu S BSSSe Ser eee Fe terme anes bo cess ean See eee et a if --<eee* eran O00 ENSUE HERE EH a a i 0 ae Ca Reverse Voltage Vk (V) Reverse Voltage Vr (V) Reverse Voltage Vk (V) FUFOATIOO a, | BLE WORLEY Tee Derating Curve Te-lo ST. _ | Reveliive Surge Reverse Power Deraling Cue | Repetitive Surge Reverse Power Capability MUTT veri Maro ny so oe 71 SE Sect) | getty pA | fe EE 2 pet er TOT, he | || = | Eset et ver Sette COOPER Testee 3 MOTI SSE a WPM ge EEE os & ST] odestoe---- AUEAUEEE MERU GEL AREGHRES NERHGH| (207 )Spuen ees ce MRT oeoAnG Hil N ip Pca ars
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a a aC: aD a a ) et 0 100 Case Temperature Te (°C) Operation Junction Temperature Tj (°C) Pulse Width tp (us) # Sine wave [£50Hz THE LTH ET. = Suite sie wave is used ‘or measurements. +E OEE MLNS Y Feo TBD ET. Typical (£#tatih EN RLTVETF, + Semiconductor products generally have charactorstic variation, Typical is a statistical average of the cevice's ability. wwwshindengen.co.jpiproductisemil (832-1) 41