DDZ4V7ASF

DDZ2V4ASF–DDZ39DSF

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 6

Technical content

Features

• 500mW Power Dissipation on FR-4 PCB
• Very Tight Tolerance on VZ
• Ideally Suited for Automated Assembly Processes
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
• Package: SOD323F
• Package Material: Molded Plastic, “Green Molding Compound”. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: Cathode Band
• Terminals: Finish – Matte Tin Annealed over Copper Alloy Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.004 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Packing Qty. Carrier DDZxx(x)xSF-7* SOD323F 3,000 Tape & Reel *Add "-7" to the appropriate type number in Electrical Characteristics table on pages 2 & 3. Example: DDZ10BSF-7. Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2009 - 2026 2027 2028 2029 2030 2031 2032 2033 2034 2035 Code W - N P R S T U V W X Y Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View XX = Product Type Marking Code (See Electrical Characteristics Table) YM = Date Code Marking Y = Year (ex: N = 2026) M = Month (ex: 9 = September) XX YM SOD323F

DDZ2V4ASF–DDZ39DSF Document number: DS31987 Rev. 23 - 2 2 of 6 www.diodes.com January 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DDZ2V4ASF–DDZ39DSF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Forward Voltage @ IF = 10mA VF 0.9 V Thermal Characteristics Characteristic Symbol Value Unit Maximum Power Dissipation (Note 5) PD 500 mW Typical Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 250 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Type Number Marking Code Zener Voltage Range (Note 6) Maximum Zener Impedance f = 1kHz Maximum Reverse Current (Note 7) VZ @ IZT (V) IZT (mA) ZZT @ IZT (Ω) IR (µA) @ VR (V) Min Max DDZ2V4ASF (EOL) 4C 2.33 2.52 20 100 120 1 DDZ2V4BSF KD 2.43 2.63 20 100 120 1 DDZ2V7ASF 4E 2.54 2.75 20 110 120 1 DDZ2V7BSF KE 2.69 2.91 20 110 120 1 DDZ3V0ASF 4F 2.85 3.07 20 120 50 1 DDZ3V0BSF KF 3.01 3.22 20 120 50 1 DDZ3V3ASF 4G 3.16 3.38 20 130 20 1 DDZ3V3BSF KG 3.32 3.53 20 130 20 1 DDZ3V6ASF 4H 3.45 3.69 20 130 10 1 DDZ3V6BSF KH 3.60 3.84 20 130 10 1 DDZ3V9ASF 4J 3.74 4.01 20 130 10 1 DDZ3V9BSF KJ 3.89 4.16 20 130 10 1 DDZ4V3ASF 4K 4.04 4.29 20 130 10 1 DDZ4V3BSF KK 4.17 4.43 20 130 10 1 DDZ4V3CSF YK 4.30 4.57 20 130 10 1 DDZ4V7ASF 4L 4.44 4.68 20 130 10 1 DDZ4V7BSF KL 4.55 4.80 20 130 10 1 DDZ4V7CSF YL 4.68 4.93 20 130 10 1 DDZ5V1ASF 4M 4.81 5.07 20 130 7.5 2 DDZ5V1BSF KM 4.94 5.20 20 130 7.5 2 DDZ5V1CSF YM 5.09 5.37 20 130 7.5 2 DDZ5V6ASF 4N 5.28 5.55 20 80 7.5 2 DDZ5V6BSF KN 5.45 5.73 20 80 7.5 2 DDZ5V6CSF YN 5.61 5.91 20 80 7.5 2 DDZ6V2ASF 4O 5.78 6.09 20 50 7.5 3 DDZ6V2BSF KO 5.96 6.27 20 50 7.5 3 DDZ6V2CSF YO 6.12 6.44 20 50 7.5 3 DDZ6V8ASF 4P 6.29 6.63 20 30 7.5 4 DDZ6V8BSF KP 6.49 6.83 20 30 7.5 4 DDZ6V8CSF YP 6.66 7.01 20 30 7.5 4 DDZ7V5ASF 4Q 6.85 7.22 20 30 7.5 4 DDZ7V5BSF KQ 7.07 7.45 20 30 7.5 4 DDZ7V5CSF YQ 7.29 7.67 20 30 7.5 4 DDZ8V2ASF 4R 7.53 7.92 20 30 7.5 7.15 DDZ8V2BSF KR 7.78 8.19 20 30 7.5 7.39 DDZ8V2CSF YR 8.03 8.45 20 30 7.5 7.63 Notes: 5. Device mounted on FR-4 PCB with 10mm x 10mm pad, board size 35mm x 25mm. 6. The zener voltage is measured < 40ms after power is supplied. 7. Short duration pulse test used to minimize self-heating effect.

DDZ2V4ASF–DDZ39DSF Document number: DS31987 Rev. 23 - 2 3 of 6 www.diodes.com January 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DDZ2V4ASF–DDZ39DSF Electrical Characteristics (continued) (@TA = +25°C, unless otherwise specified.) Type Number Marking Code Zener Voltage Range (Note 6) Maximum Zener Impedance f = 1kHz Maximum Reverse Current (Note 7) VZ @ IZT (V) IZT (mA) ZZT @ IZT (Ω) IR (µA) @ VR (V) Min Max DDZ9V1ASF 4S 8.29 8.73 20 30 7.5 7.88 DDZ9V1BSF KS 8.57 9.01 20 30 7.5 8.14 DDZ9V1CSF YS 8.83 9.30 20 30 7.5 8.39 DDZ10ASF 4T 9.12 9.59 20 30 7.5 8.66 DDZ10BSF KT 9.41 9.90 20 30 7.5 8.94 DDZ10CSF YT 9.70 10.20 20 30 7.5 9.22 DDZ10DSF 7T 9.94 10.44 20 30 7.5 9.44 DDZ11ASF 4U 10.18 10.71 10 30 0.07 9.67 DDZ11BSF KU 10.50 11.05 10 30 0.07 9.98 DDZ11CSF YU 10.82 11.38 10 30 0.07 10.28 DDZ12ASF 4V 11.13 11.71 10 35 0.07 10.60 DDZ12BSF KV 11.44 12.03 10 30 0.07 10.90 DDZ12CSF YV 11.74 12.35 10 35 0.07 11.20 DDZ13ASF 4W 12.11 12.75 10 35 0.07 11.50 DDZ13BSF KW 12.55 13.21 10 35 0.07 11.90 DDZ13CSF YW 12.99 13.66 10 35 0.07 12.30 DDZ15ASF 4X 13.44 14.13 10 40 0.07 12.80 DDZ15BSF KX 13.89 14.62 10 40 0.07 13.20 DDZ15CSF YX 14.35 15.09 10 40 0.07 13.60 DDZ16ASF 4Y 14.80 15.57 10 40 0.07 14.10 DDZ16BSF KY 15.25 16.04 10 40 0.07 14.50 DDZ16CSF YY 15.69 16.51 10 40 0.07 14.90 DDZ18ASF 4Z 16.22 17.06 10 45 0.07 15.40 DDZ18BSF KZ 16.82 17.70 10 45 0.07 16.00 DDZ18CSF YZ 17.42 18.33 10 45 0.07 16.50 DDZ20ASF RJ 18.05 18.96 10 50 0.07 17.10 DDZ20BSF ZJ 18.63 19.59 10 50 0.07 17.70 DDZ20CSF PJ 19.23 20.22 10 50 0.07 17.70 DDZ20DSF 2J 19.72 20.72 10 50 0.07 18.70 DDZ22ASF RK 20.15 21.20 5 55 0.07 19.10 DDZ22BSF ZK 20.64 21.71 5 55 0.07 19.60 DDZ22CSF PK 21.08 22.17 5 55 0.07 20.00 DDZ22DSF 2K 21.52 22.63 5 55 0.07 20.40 DDZ24ASF RL 22.05 23.18 5 60 0.07 20.90 DDZ24BSF ZL 22.61 23.77 5 60 0.07 21.50 DDZ24CSF PL 23.12 24.31 5 60 0.07 22.00 DDZ24DSF 2L 23.63 24.85 5 60 0.07 22.40 DDZ27ASF RM 24.26 25.52 5 70 0.07 23.00 DDZ27BSF ZM 24.97 26.26 5 70 0.07 23.70 DDZ27CSF PM 25.63 26.95 5 70 0.07 24.30 DDZ27DSF 2M 26.29 27.64 5 70 0.07 25.00 DDZ30ASF RN 26.99 28.39 5 80 0.07 25.60 DDZ30BSF ZN 27.70 29.13 5 80 0.07 26.00 DDZ30CSF PN 28.36 29.82 5 55 0.07 26.90 DDZ30DSF 2N 29.02 30.51 5 80 0.07 27.60 DDZ33ASF RO 29.68 31.22 5 80 0.07 28.20 DDZ33BSF ZO 30.32 31.88 5 80 0.07 28.80 DDZ33CSF PO 30.90 32.50 5 65 0.07 29.40 DDZ33DSF 2O 31.49 33.11 5 65 0.07 29.90 DDZ36ASF RP 32.14 33.79 5 90 0.07 30.50 DDZ36BSF ZP 32.79 34.49 5 90 0.07 31.20 DDZ36CSF PP 33.40 35.13 5 75 0.07 31.70 DDZ36DSF 2P 34.01 35.77 5 90 0.07 32.30 DDZ39ASF RQ 34.68 36.47 5 85 0.2 30.00 DDZ39BSF ZQ 35.36 37.19 5 85 0.2 30.00 DDZ39CSF PQ 36.00 37.85 5 85 0.2 30.00 DDZ39DSF 2Q 36.63 38.52 5 85 0.2 30.00 Notes: 6. The zener voltage is measured < 40ms after power is supplied. 7. Short duration pulse test used to minimize self-heating effect.

DDZ2V4ASF–DDZ39DSF Document number: DS31987 Rev. 23 - 2 4 of 6 www.diodes.com January 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DDZ2V4ASF–DDZ39DSF -50 -40 -30 -20 -10 0 10 20 30 40 V , ZENER VOLTAGE (V)Z Fig. 3 Temperature Coefficient vs. Zener Voltage TC, TEMPERATURE COEFFICIENT (mV/°C) 0 2 4 6 8 10 12 14 16 18 20 22 V , ZENER VOLTAGE (V) Fig. 4 Typical Characteristics Z Zener Breakdown 20I , ZENER CURRENT (mA)Z 3V6BSF 5V1BSF 5V6BSF 6V2BSF 20BSF 15BSF 12BSF 11BSF 10BSF 24 26 28 36 18BSF 27DSF 30BSF 30 32 34 36BSF 24BSF 0.1 0.2 0.3 0.4 0.5 25 0 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 0.6 R = 250°C/W  JA Note 5 0.001 0.01 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics T = -65°C A T = -40°C A T = 25°C A T = 85°C A T = 105°C A T = 125°C A T = 150°C A 1.0 IF, INSTANTANEOUS FORWARD CURRENT (A) PD, POWER DISSIPATION (W)

DDZ2V4ASF–DDZ39DSF Document number: DS31987 Rev. 23 - 2 5 of 6 www.diodes.com January 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DDZ2V4ASF–DDZ39DSF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOD323F He E D b (2x) c 21 A 1 b (2x) L2 (2x) SOD323F Dim Min Max Typ A 0.60 0.75 - b 0.25 0.35 - c 0.05 0.26 - D 1.15 1.35 1.25 E 1.60 1.80 1.70 He 2.30 2.70 2.50 L1 0.30 0.50 0.40 L2 0.41 0.61 0.51 α1 - - 7° α2 - - 3° β1 - - 7° β2 - - 3° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOD323F Y X G Dimensions Value (in mm) G 1.280 X 0.710 X1 2.700 Y 0.403

DDZ2V4ASF–DDZ39DSF Document number: DS31987 Rev. 23 - 2 6 of 6 www.diodes.com January 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DDZ2V4ASF–DDZ39DSF IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. 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