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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 13
Technical content
Features
- Electrical features - V CES = 1200 V - I C nom = 50 A / ICRM = 100 A - TRENCHSTOP TM IGBT7
- Mechanical features - Al 2O3 substrate with low thermal resistance - Compact design - Solder contact technology - Rugged mounting due to integrated mounting clamps Potential applications
- Auxiliary inverters
- Air conditioning
- Motor drives
- Servo drives Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
Datasheet Please read the Important Notice and Warnings at the end of this document 0.10 www.infineon.com 2021-07-30
Datasheet 2 0.10 2021-07-30
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 2.5 kV Internal Isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI > 200 RTI Elec. RTI housing 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 30 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 4 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 6 mΩ Storage temperature Tstg -40 125 °C Mounting force per clamp F 20 50 N Weight G 24 g Note: The current under continuous operation is limited to 30A rms per connector pin.
2 IGBT-Chopper
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Continous DC collector current ICDC Tvj max = 175 °C TH = 85 °C 50 A Repetitive peak collector current ICRM tP = 1 ms 100 A Gate-emitter peak voltage VGES ±20 V DDB6U50N16W1R EasyBRIDGE module Datasheet 3 0.10 2021-07-30
Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 50 A, VGE = 15 V Tvj = 25 °C 1.50 TBD V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 Gate threshold voltage VGEth IC = 1.28 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 6.45 V Gate charge QG VGE = ±15 V, VCE = 600 V 0.92 µC Internal gate resistor RGint Tvj = 25 °C 0 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.039 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 0.0062 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 5.1 Ω Tvj = 25 °C 0.042 µs Tvj = 125 °C 0.045 Tvj = 175 °C 0.046 Rise time (inductive load) tr IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 5.1 Ω Tvj = 25 °C 0.036 µs Tvj = 125 °C 0.040 Tvj = 175 °C 0.043 Turn-off delay time (inductive load) tdoff IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.1 Ω Tvj = 25 °C 0.270 µs Tvj = 125 °C 0.350 Tvj = 175 °C 0.370 Fall time (inductive load) tf IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.1 Ω Tvj = 25 °C 0.110 µs Tvj = 125 °C 0.200 Tvj = 175 °C 0.270 Turn-on energy loss per pulse Eon IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 5.1 Ω, di/dt = 850 A/µs (Tvj = 175 °C) Tvj = 25 °C 4.47 mJ Tvj = 125 °C 5.2 Tvj = 175 °C 5.67 Turn-off energy loss per pulse Eoff IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 5.1 Ω, dv/dt =
2900 V/µs (Tvj = 175 °C)
Tvj = 25 °C 3.36 mJ Tvj = 125 °C 5.25 Tvj = 175 °C 6.45 SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 190 A tP ≤ 7 µs, Tvj = 175 °C 180 DDB6U50N16W1R EasyBRIDGE module Datasheet 4 0.10 2021-07-30
Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Thermal resistance, junction to heatsink RthJH per IGBT 0.840 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
3 Diode, Chopper
Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Continous DC forward current IF 25 A Repetitive peak forward current IFRM tP = 1 ms 50 A I2t - value I2t VR = 0 V, tP = 10 ms Tvj = 125 °C 72.5 A²s Tvj = 175 °C 63 Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 25 A, VGE = 0 V Tvj = 25 °C 1.83 V Tvj = 125 °C 1.70 Tvj = 175 °C 1.63 Peak reverse recovery current IRM IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 960 A/µs (Tvj = 175 °C) Tvj = 25 °C 21.6 A Tvj = 125 °C 25.3 Tvj = 175 °C 27.6 Recovered charge Qr IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 960 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.89 µC Tvj = 125 °C 3.53 Tvj = 175 °C 4.62 Reverse recovery energy Erec IF = 25 A, VR = 600 V, VGE = -15 V, -diF/dt = 960 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.62 mJ Tvj = 125 °C 1.3 Tvj = 175 °C 1.74 DDB6U50N16W1R EasyBRIDGE module Datasheet 5 0.10 2021-07-30
Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Thermal resistance, junction to heatsink RthJH per diode 1.85 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
4 Diode, Rectifier
Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TH = 100 °C 50 A Maximum RMS current at rectifier output IRMSM TH = 100 °C 85 A Surge forward current IFSM tP = 10 ms Tvj = 25 °C 500 A Tvj = 150 °C 400 I2t - value I2t tP = 10 ms Tvj = 25 °C 1250 A²s Tvj = 150 °C 800 Table 8 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 50 A Tvj = 150 °C 0.96 V Reverse current Ir Tvj = 150 °C, VR = 1600 V 1 mA Thermal resistance, junction to heatsink RthJH per diode 1.11 K/W Temperature under switching conditions Tvj, op -40 150 °C DDB6U50N16W1R EasyBRIDGE module Datasheet 6 0.10 2021-07-30
5 Characteristics diagrams
reverse bias safe operating area (RBSOA), IGBT- Chopper IC = f(VCE) RGoff = 5.1 Ω, VGE = ±15 V, Tvj = 175 °C transfer characteristic (typical), IGBT-Chopper IC = f(VGE) VCE = 20 V 0 200 400 600 800 1000 1200 1400 100 110 120 5 6 7 8 9 10 11 12 13 100 output characteristic (typical), IGBT-Chopper IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT-Chopper IC = f(VCE) Tvj = 175 °C 100 100 DDB6U50N16W1R EasyBRIDGE module Datasheet 7 0.10 2021-07-30
transient thermal impedance , IGBT-Chopper Zth = f(t) forward characteristic of (typical), Diode, Chopper IF = f(VF) 0.001 0.01 0.1 1 10 0.01 0.1 transient thermal impedance , Diode, Chopper Zth = f(t) forward characteristic of (typical), Diode, Rectifier IF = f(VF) 0.001 0.01 0.1 1 10 0.01 0.1 100 DDB6U50N16W1R EasyBRIDGE module Datasheet 8 0.10 2021-07-30
transient thermal impedance , Diode, Rectifier Zth = f(t) 0.001 0.01 0.1 1 10 0.01 0.1 DDB6U50N16W1R EasyBRIDGE module Datasheet 9 0.10 2021-07-30
6 Circuit diagram
Datasheet 10 0.10 2021-07-30
7 Package outlines
Datasheet 11 0.10 2021-07-30
Revision history
Document revision Date of release Description of changes 0.10 2021-07-30 Initial version DDB6U50N16W1R EasyBRIDGE module Datasheet 12 0.10 2021-07-30
All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-07-30 Published by Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA699-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.