DD400S65K1 EUPEC | Alldatasheet
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Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C VCES 6500 6300 5800 V Dauergleichstrom DC forward current I F 400 A Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms I FRM 800 A Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t 87 k A2s Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV Teilentladungs Aussetzspannung partial discharge extinction voltage RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) V ISOL 5,1 kV Charakteristische Werte / Characteristic values min. typ. max. Durchlaßspannung IF = 400A, Tvj = 25°C V F 3,0 3,8 4,6 V forward voltage IF = 400A, Tvj = 125°C 3,9 4,7 V Sperrstrom VR = 6300V, Tvj = 25°C I R - 0,15 - mA reverse current VR = 6500V, Tvj = 125°C - 15 - mA Rückstromspitze IF = 400A, - diF/dt = 1400A/µs peak reverse recovery current VR = 3600V, Tvj = 25°C I RM - 540 - A VR = 3600V, Tvj = 125°C - 660 - A Sperrverzögerungsladung IF = 400A, - diF/dt = 1400A/µs recovered charge VR = 3600V, Tvj = 25°C Q r - 360 - µC VR = 3600V, Tvj = 125°C - 700 - µC Abschaltenergie pro Puls IF = 400A, - diF/dt = 1400A/µs reverse recovery energy VR = 3600V, Tvj = 25°C E rec - 440 - mJ VR = 3600V, Tvj = 125°C - 1050 - mJ Modulinduktivität stray inductance module pro Zweig / per arm LsCE - 25 - nH Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip pro Zweig / per arm RCC´+EE´ - 0,37 - mΩ prepared by: Dr. Oliver Schilling date of publication: 2002-07-05 approved by: Dr. Schütze 2002-07-05 revision/Status: Series 1 1 DD 400 S65 K1 (final 1).xls
Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand thermal resistance, junction to case Diode/Diode, DC RthJC - - 0,032 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K RthCK - 0,008 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj, max - - 150 °C Betriebstemperatur Sperrschicht junction operation temperature Schaltvorgänge Diode(SOA) switching operation Diode(SOA) Tvj,op -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 56 mm Luftstrecke clearance 26 mm CTI comperative tracking index >600 Anzugsdrehmoment f. mech. Befestigung Schraube /screw M6 M 5 Nm mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M8 M 8 - 10 Nm Gewicht weight G 1000 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 2 DD 400 S65 K1 (final 1).xls
Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 IF [A] VF [V] IR [A] VR [V] (at auxiliary terminals) 100 200 300 400 500 600 700 800 25°C 125°C Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF) Forward characteristic of inverse diode (typical) 100 200 300 400 500 600 700 800 0 1000 2000 3000 4000 5000 6000 Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) Pmax = 1200kW ; Tvj= 125°C 3 DD 400 S65 K1 (final 1).xls
Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 t [s] i 1234 ri [K/kW] : Diode 14,40 8,00 1,92 7,68 τi [s] : Diode 0,030 0,10 0,30 1,0 ZthJC [K / W] 0,001 0,01 0,1 0,001 0,01 0,1 1 10 100 Zth:Diode Transienter Wärmewiderstand ZthJC = f (t) Transient thermal impedance 4 DD 400 S65 K1 (final 1).xls
Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Äußere Abmessungen / extenal dimensions Anschlüsse / Terminals 1 -- 2 - - 3 - - 4,6 Anode / anode 5,7 Kathode / cathode 5 DD 400 S65 K1 (final 1).xls
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