DD211 SITI | Alldatasheet

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新竹市科學園區展業一路九號七樓之一新竹市科學園區展業一路九號七樓之一新竹市科學園區展業一路九號七樓之一新竹市科學園區展業一路九號七樓之一 SILICON TOUCH TECHNOLOGY INC. No. 9, 7F-1 Chan-Yeh Road 1 Science-Based Industrial Park Tel：886-3-5645656 Fax ：886-3-5645626 DD211 Version : A.001 Issue Date : 2002/12/03 File Name : SP-DD211-A.001.doc Total Pages : 11 A DRIVER, CHARGE PUMP FOR HIGH FORWARD-VOLTAGE LEDS WITH LOW SUPPLY VOLTAGE (2.0V~3.3V)

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-1- Version：：：：A.001 DD211 A DRIVER, CHARGE PUMP FOR HIGH FORWARD-VOLTAGE LEDS WITH LOW SUPPLY VOLTAGE General Description DD211 is designed specifically for driving a high forward-voltage LED as a light source with low supply voltage. Like a charge pump, DD211 doubles the supply voltage, but only requires one external component, a capacitor. The built-in oscillator generates a 75% duty-cycle and 350kHz-frequency clock. DD211 also consumes little power with CMOS integrated circuits. DD211 comes in a small die that makes packaging it within a LED module be easy. DD211’s small package, SOT25 occupies only little area for portable device, such as a handset.

Features

/circle6 Low supply voltage, 2.0V~3.3V /circle6 Only one external component, a capacitor needed /circle6 Built-in resistor to limit the output current /circle6 Low quiescent supply current /circle6 It is easy to package DD211 within a LED module

Applications

/circle6 High forward-voltage LED Indicators’ drivers /circle6 High forward-voltage LED Back lighters for low-voltage wireless handsets

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-2- Version：：：：A.001 Pad Descriptions PAD NAME DESCRIPTIONS VDD Power VSS Ground CP Positive Node of the External Capacitor CN Negative Node of the External Capacitor LEDA Anode of the External LED The Block Diagram and The Application Circuit Absolute Maximum Ratings (Unless otherwise noted, TA = 25 °°°°C ) Characteristic Symbol Rating Unit Supply Voltage VDD - VSS -0.5 ~ 3.6 V Output Sourcing Current IDD 100 mA Operating Temperature Range T OPR -40 ~ 85 °°°°C Storage Temperature Range T STG -55 ~ 150 °°°°C hvhvhvhv DD211 OSC Charge Pump Rin Power Ground Ground VDD VSS + _ Cext CN CP LEDA

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-3- Version：：：：A.001 Recommended Operating Conditions ITEM SYMBOL MIN. TYP . MAX. UNIT Supply Voltage VDD - VSS 2.0 2.5 3.3 V External Capacitance Cext - 0.10 - uF

Electrical Characteristics

( TA= 25°C, VDD= 2.5V ) Characteristic Symbols Condition Min. Typ. Max. Unit Operating Current I DD No external LED, Cext=0.1uF - - 0.75 mA Output Current for ‘ON’ Cycle IFON VF of external LED=3.5V Cext=0.1uF 23 30 37 mA Time-Average Output Current IFAVG VF of external LED=3.5V Cext=0.1uF 17.25 22.5 27.75 mA Output Voltage for ‘ON’ Cycle VLEDAON No external LED, Cext=0.1uF - 5.0 - V Output Voltage for ‘OFF’ Cycle VLEDAOFF No external LED, Cext=0.1uF - 2.5 - V Frequency of the Internal Oscillator Freq Cext=0.1uF - 350 - kHz Duty Cycle of the Internal Oscillator Dt Cext=0.1uF - 75 - %

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-4- Version：：：：A.001 Functional Descriptions DD211 is designed to drive a high forward-voltage LED as a light source with low supply voltage. As Fig.a shown, when the power is on, DD211 will double the supply voltage to drive the external LED with 75% duty cycle. The built-in resistor of DD211 is used to limit the driving current. Test Circuits As Fig.a shown. IF VLEDA IFON 2VDD VDD (Without LED) 1/Freq Dt Fig.a _ Cext CN CP PowerGround VSS LEDA DD211 hvhvhvhv Ground IF VLEDA VDD

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-5- Version：：：：A.001 Typical Operating Characteristics (Typical Operation Circuit with Cext=0.1uF, TA=25 °C, unless otherwise noted) Fig.b Typical Power Consumption v.s. VF 100 150 200 250 300 350 400 2.4 2.8 3.2 3.6 4.4 4.8 5.2 5.6 6.4 VF( Volt) Power( mW) VDD=2.0V VDD=2.5V VDD=3.0V VDD=3.3V Fig.c Typical IFon v.s. VF 0.00 10.00 20.00 30.00 40.00 50.00 60.00 70.00 80.00 2.6 3.2 3.8 4.4 5.6 6.2 VF( Volt) IFon( mA) VDD=2.0V VDD=2.5V VDD=3.0V VDD=3.3V Fig.d Typical Power Consumption v.s. Tj For VF=2.5V 100 150 200 250 -40 -20 100 Tj( 'C) Power( mW) VDD=2.0V VDD=2.5V Fig.e Typical IFon v.s. Tj For VF=2.5V 0.00 10.00 20.00 30.00 40.00 50.00 60.00 -40 -20 100 Tj( 'C) IFon( mA) VDD=2.0V VDD=2.5V Fig.f Typical Power Consumption v.s. Tj For VF=3.5V 100 150 200 250 300 350 400 -40 -20 100 Tj( 'C) Power( mW) VDD=2.0V VDD=2.5V VDD=3.0V VDD=3.3V Fig.g Typical IFon v.s. Tj For VF=3.5V 0.00 10.00 20.00 30.00 40.00 50.00 60.00 70.00 80.00 90.00 -40 -20 100 Tj( 'C) IFon( mA) VDD=2.0V VDD=2.5V VDD=3.0V VDD=3.3V

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-6- Version：：：：A.001 Typical Operating Characteristics (Continued) (Typical Operation Circuit with Cext=0.1uF, TA=25 °C, unless otherwise noted) Fig.h Typical Power Consumption v.s. Tj For VF=4.5V 100 150 200 250 300 -40 -20 100 Tj( 'C) Power( mW) VDD=2.5V VDD=3.0V VDD=3.3V Fig.i Typical IFon v.s. Tj For VF=4.5V 0.00 10.00 20.00 30.00 40.00 50.00 60.00 -40 -20 100 Tj( 'C) IFon( mA) VDD=2.5V VDD=3.0V VDD=3.3V Fig.j Typical Power Consumption v.s. Tj For VF=5.5V 100 120 140 160 -40 -20 100 Tj( 'C) Power( mW) VDD=3.0V VDD=3.3V Fig.k Typical IFon v.s. Tj For VF=5.5V 0.00 5.00 10.00 15.00 20.00 25.00 30.00 -40 -20 100 Tj( 'C) IFon( mA) VDD=3.0V VDD=3.3V

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-7- Version：：：：A.001 DIE CONFIGURATION /circle6 Die Size: 494.9um * 532.9um /circle6 Width of Cut Line: 100um /circle6 Die Thickness: 12mil(=300um) /circle6 Pad Size: 100um * 100um (284.15, 182.6) (284.15, 452.2) (494.9, 532.9) Unit: um (0.0, 0.0) (142.95, 124.05) (414.2, 182.6) (414.15, 452.2) LEDA CN CP VDD VSS

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-8- Version：：：：A.001 * Note: SiTI reserves the right to improve the device geometry and manufacturing processes without prior notice. Though these improvements may result in slight geometry changes, they will not affect die electrical limits, pad layouts. WAFER INFORMATION Material: Silicon with P-Substrate Diameter: 6 inches( ≒15cm) Thickness: 12 mils( ≒300um) Pin Assignment (SOT-25) Pin NO. Pin Name Description

1 CN Connected to Negative node of the external capacitor

2 VSS Ground

3 VDD Power

4 LEDA Connected to Anode of the external LED

5 CP Connected to Positive node of the external capacitor

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-9- Version：：：：A.001 Package Specifications (SOT-25) DIMENSIONS IN MILLIMETERS SYMBOL MIN NOM MAX A 1.00 1.10 1.30 A1 0.00 － 0.10 A2 0.70 0.80 0.90 b 0.35 0.40 0.50 C 0.10 0.15 0.25 D 2.70 2.90 3.10 E 1.40 1.60 1.80 e － 1.90(TYP) － H 2.60 2.80 3.00 L 0.37 － － θ1 1 ° 5 ° 9 ° D E H b A1 e AA2 C L

點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. DD211 SP-DD211-A.001.doc-10- Version：：：：A.001 The products listed herein are designed for ordinary electronic applications, such as electrical appliances, audio-visual equipment, communications devices and so on. Hence, it is advisable that the devices should not be used in medical instruments, surgical implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention equipment and the like. Misusing those products may directly or indirectly endanger human life, or cause injury and property loss. Silicon Touch Technology, Inc. will not take any responsibilities regarding the misusage of the products mentioned a bove. Anyone who purchases any products described herein with the above-mentioned intention or with such misused applications should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its distributors and all their officers and em ployees shall defend jointly and severally against any and all claims and litigation and all damages, cost and expenses associated with such intention and manipulation.