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- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
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Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Part Number R1 R2 Marking DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH DCX143TH DCX114TH 22kΩ 47kΩ 4.7kΩ 10kΩ 2.2kΩ 10kΩ 4.7kΩ 10kΩ 22kΩ 47kΩ 4.7kΩ 47kΩ 47kΩ 10kΩ C17 C20 C08 C14 C06 C13 C07 C12 Mechanical Data Case: SOT563 Case Material: Molded Plastic “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.005 grams (Approximate) Ordering Information (Note 4) Part Number Packaging Shipping DCX124EH-7 SOT563 3,000/Tape & Reel DCX144EH-7 SOT563 3,000/Tape & Reel DCX143EH-7 SOT563 3,000/Tape & Reel DCX114YH-7 SOT563 3,000/Tape & Reel DCX123JH-7 SOT563 3,000/Tape & Reel DCX114EH-7 SOT563 3,000/Tape & Reel DCX143TH-7 SOT563 3,000/Tape & Reel DCX114TH-7 SOT563 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2018 2019 2020 2021 2022 2023 2024 Code F G H I J K L Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D R1, R2 Device Schematic R1 Only Device Schematic R1R2 Top View CXX = Product Type Marking Code YM = Date Code Marking Y = Year ex: F = 2018 M = Month ex: 9 = September CXXYM SOT563 Top View
DCX (xxxx) H Document number: DS30422 Rev. 5 - 2 2 of 8 www.diodes.com August 2018 © Diodes Incorporated DCX (xxxx) H Maximum Ratings NPN Section (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Supply Voltage VCC 50 V DCX124EH DCX144EH DCX143EH Input Voltage DCX114YH DCX123JH DCX114EH DCX143TH DCX114TH VIN -10 to +40 -10 to +40 -10 to +30 -6 to +40 -5 to +12 -10 to +40 -5V Max -5V Max V DCX124EH DCX144EH DCX143EH Output Current DCX114YH DCX123JH DCX114EH DCX143TH DCX114TH IO 100 100 100 100 mA Output Current All IC (Max) 100 mA Power Dissipation (Total) PD 150 mW Thermal Resistance, Junction to Ambient Air (Note 5) RJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Maximum Ratings PNP Section (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Supply Voltage VCC -50 V DCX124EH DCX144EH DCX143EH Input Voltage DCX114YH DCX123JH DCX114EH DCX143TH DCX114TH VIN +10 to -40 +10 to -40 +10 to -30 +6 to -40 +5 to -12 +10 to -40 +5V max +5V max V DCX124EH DCX144EH DCX143EH Output Current DCX114YH DCX123JH DCX114EH DCX143TH DCX114TH IO -30 -30 -100 -70 -100 -50 -100 -100 mA Output Current All IC (Max) -100 mA Power Dissipation (Total) PD 150 mW Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
DCX (xxxx) H Document number: DS30422 Rev. 5 - 2 3 of 8 www.diodes.com August 2018 © Diodes Incorporated DCX (xxxx) H Electrical Characteristics NPN Section (@TA = +25° C, unless otherwise specified.) Characteristic (DCX143TH & DCX114TH Only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 V IC = 50µA Collector-Emitter Breakdown Voltage BVCEO 50 V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 5 V IE = 50µA Collector Cut-Off Current ICBO 0.5 µA VCB = 50V Emitter Cut-Off Current IEBO 0.5 µA VEB = 4V Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IC/IB = 2.5mA / 0.25mA DCX143TH IC/IB = 1mA / 0.1mA DCX114TH DC Current Transfer Ratio hFE 100 250 600 IC = 1mA, VCE = 5V Gain-Bandwidth Product (Note 6) fT 250 MHz VCE = 10V, IE = 5mA, f = 100MHz Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH Vl(OFF) 0.5 0.5 0.5 0.3 0.5 0.5 1.1 1.1 1.1 1.1 V VCC = 5V, IO = 100µA DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH Vl(ON) 1.9 1.9 1.9 1.9 3.0 3.0 3.0 1.4 1.1 3.0 VO = 0.3V, IO = 5mA VO = 0.3V, IO = 2mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 1mA VO = 0.3V, IO = 5mA VO = 0.3V, IO = 10mA Output Voltage DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH VO(ON) 0.1 0.3 V IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA IO/Il = 5mA / 0.25mA IO/Il = 10mA / 0.5mA Input Current DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH Il 0.36 0.18 1.8 0.88 3.6 0.88 mA VI = 5V Output Current IO(OFF) 0.5 µA VCC = 50V, VI = 0V DC Current Gain DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH Gl VO = 5V, IO = 5mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 5mA Note: 6. Transistor - For Reference Only.
DCX (xxxx) H Document number: DS30422 Rev. 5 - 2 4 of 8 www.diodes.com August 2018 © Diodes Incorporated DCX (xxxx) H Electrical Characteristics PNP Section (@TA = +25° C, unless otherwise specified.) Characteristic (DCX143TH & DCX114TH Only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -50 V IC = -50µA Collector-Emitter Breakdown Voltage BVCEO -50 V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -5 V IE = -50µA Collector Cut-Off Current ICBO -0.5 µA VCB = -50V Emitter Cut-Off Current IEBO -0.5 µA VEB = -4V Collector-Emitter Saturation Voltage VCE(SAT) -0.3 V IC/IB = -2.5mA / -0.25mA DCX143TH IC/IB = -1mA / -0.1mA DCX114TH DC Current Transfer Ratio hFE 100 250 600 IC = -1mA, VCE = -5V Gain-Bandwidth Product (Note 6) fT 250 MHz VCE = -10V, IE = -5mA, f = 100MHz Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH Vl(OFF) -0.5 -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1 -1.1 -1.1 V VCC = -5V, IO = -100µA DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH Vl(ON) -1.9 -1.9 -1.9 -1.9 -3.0 -3.0 -3.0 -1.4 -1.1 -3.0 VO = -0.3V, IO = -5mA VO = -0.3V, IO = -2mA VO = -0.3V, IO = -20mA VO = -0.3V, IO = -1mA VO = -0.3V, IO = -5mA VO = -0.3V, IO = -10mA Output Voltage DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH VO(ON) -0.1 -0.3 V IO/Il = -10mA / -0.5mA IO/Il = -10mA / -0.5mA IO/Il = -10mA / -0.5mA IO/Il = -5mA / -0.25mA IO/Il = -5mA / -0.25mA IO/Il = -10mA / -0.5mA Input Current DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH Il -0.36 -0.18 -1.8 -0.88 -3.6 -0.88 mA VI = -5V Output Current IO(OFF) -0.5 µA VCC = -50V, VI = 0V DC Current Gain DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH Gl VO = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA Gain-Bandwidth Product (Note 6) fT 250 MHz VCE = -10V, IE = -5mA, f = 100MHz Note: 6. Transistor - For Reference Only.
DCX (xxxx) H Document number: DS30422 Rev. 5 - 2 5 of 8 www.diodes.com August 2018 © Diodes Incorporated DCX (xxxx) H Typical Curves – DCX143EH NPN Section -50 0 50 100 150 250 200 150 100 T , AMBIENT TEMPERATURE ( C) Fig. 1 Derating Curve - Total A ° P , POWER DISSIPATION (mW)d 0.001 0.01 0.1 0 10 20 30 40 50 V , MAXIMUM COLLECTOR VOLTAGE (V)CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 2 V vs. I C CE(SAT) C I /I = 10CB -25 C° 75 C° 25 C° 1,000 100 1 10 100 h , DC CURRENT GAIN (NORMALIZED)FE I , COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain C V = 10CE 0 20 30 C , CAPACITANCE (pF)OB V , REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance R 105 15 25 I = 0mAE 0.01 0.1 100 0 1 2 3 4 8 9 10 I , COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 5 Collector Current vs. Input Voltage in 75 C° 5 6 7 0.1 0 10 20 30 40 50 I , COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current C V = 0.2O V , INPUT VOLTAGE (V)in -25癈 25癈 75 C° PD, POWER DISSIPATION (mW) VIN, INPUT VOLTAGE (V) -25C 25C VIN, INPUT VOLTAGE (V) Fig. 5 Collector Current vs. Input Voltage VO = 0.2V VCE = 10V
DCX (xxxx) H Document number: DS30422 Rev. 5 - 2 6 of 8 www.diodes.com August 2018 © Diodes Incorporated DCX (xxxx) H Typical Curves – DCX143EH PNP Section 0.001 0.01 0.1 0 10 20 30 40 50 V , MAXIMUM COLLECTOR VOLTAGE (V)CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 7 V vs. I C CE(SAT) C I /I = 10CB -25 C° 75 C° 25 C° 1,000 100 1 10 100 h , DC CURRENT GAIN (NORMALIZED)FE I , COLLECTOR CURRENT (mA) Fig. 8 DC Current Gain C V = 10CE 0 20 30 C , CAPACITANCE (pF)OB V , REVERSE BIAS VOLTAGE (V) Fig. 9 Output Capacitance R 105 15 25 I = 0mAE 0.01 0.1 100 0 1 2 3 4 8 9 10 I , COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 10 Collector Current vs. Input Voltage in 5 6 7 V = 5VO 0.1 0 10 20 30 40 50 I , COLLECTOR CURRENT (mA) Fig. 11 Input Voltage vs. Collector Current C V = 0.2O V , INPUT VOLTAGE (V)in VO = 0.2V VCE = 10V VIN, INPUT VOLTAGE (V) Fig. 10 Collector Current vs. Input Voltage VIN, INPUT VOLTAGE (V)
DCX (xxxx) H Document number: DS30422 Rev. 5 - 2 7 of 8 www.diodes.com August 2018 © Diodes Incorporated DCX (xxxx) H Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT563 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT563 A M L B C H K G D SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm Dimensions SOT563 Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X Z Y C2C2 G
DCX (xxxx) H Document number: DS30422 Rev. 5 - 2 8 of 8 www.diodes.com August 2018 © Diodes Incorporated DCX (xxxx) H IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this docum ent is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further , Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com