DCX4710H

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 8

Technical content

Features

  • Built in Biasing Resistors
  • Epitaxial Planar Die Construction
  • Ideally Suited for Automated Assembly Processes
  • Lead Free By Design/RoHS Compliant (Note 1)
  • "Green" Device (Note 2) Mechanical Data
  • Case: SOT-563
  • Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020C
  • Terminal Connections: See Fig. 2
  • Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Marking & Type Code Information: See Page 7
  • Ordering Information: See Page 7
  • Weight: 0.005 grams (approximate) Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) R4 (NOM) Q1 PNP 10KΩ 47KΩ   Q2 NPN   10KΩ 10KΩ Maximum Ratings: Total Device @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Output Current Iout 100 mA Power Dissipation (Note 3) Pd 150 mW Power Derating Factor above 45°C Pder 1.43 mW/°C Junction Operation and Storage Temperature Range Pd -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) @ TA = 25°C RθJA 833 °C/W Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. SOT-563 Schematic and Pin Configuration PART OBSOLETE – CONTACT US

Document number: DS30871 Rev. 7 - 4 2 of 8 www.diodes.com June 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX4710H Sub-Component Device – Pre-Biased PNP Transistor (Q1) @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Supply Voltage VCC -50 V Input Voltage VIN +6 to -40 V Output Current (dc) IC(max) -100 mA Sub-Component Device – Pre-Biased NPN Transistor (Q2) @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Supply Voltage VCC 50 V Input Voltage VIN -10 to +40 V Output Current (dc) IC(max) 100 mA Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Cut Off Current ICBO   -100 nA VCB = -50V, IE = 0 Collector-Base Breakdown Voltage V(BR)CBO -50  V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50  V IC = -4mA, IB = 0 Input Off Voltage VI(OFF)   -0.3 V VCE = -5V, IC = -100µA Output Off Current IO(OFF)   -0.5 µA VCC = -50V, VI = 0V ON CHARACTERISTICS DC Current Gain hFE 80    VCE = -5V, IC = -5mA Collector-Emitter Saturation Voltage VCE(sat)   -0.25 V IC = -10mA, IB = -0.3mA Output On Voltage VO(ON)  -0.1 -0.3 V IO/II = -10mA/-0.5mA Input On Voltage (Load is present) VI(ON) -1.4 -0.9  V VO = -0.3V, IC = -2mA Input Current II   -0.88 mA VI = -5V Input Resistor +/- 30% (Base) ∆R1 7 10 13 KΩ  Pull-up Resistor (Base to Vcc supply) R2 32 47 62 KΩ  Resistor Ratio ∆(R2/R1) 20  20 %  SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) fT  250  MHz VCE = -10V, IE = -5mA, f = 100MHz *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02

Document number: DS30871 Rev. 7 - 4 3 of 8 www.diodes.com June 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX4710H Pre-Biased NPN Transistor (Q2) @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Cut Off Current ICBO   100 nA VCB = 50V, IE = 0 Collector-Base Breakdown Voltage V(BR)CBO 50   V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 50   V IC = 2mA, IB = 0 Input Off Voltage VI(OFF)  1.2 0.5 V VCE = 5V, IC = 100µA Output Current IO(OFF)   0.5 µA VCC = 50V, VI = 0V ON CHARACTERISTICS DC Current Gain hFE 35    VCE = 5V, IC = 5mA Collector-Emitter Saturation Voltage VCE(sat)   0.25 V IC = -10mA, IB = -0.3mA Output On Voltage VO(ON)  0.1 0.3 V IO/II = 10mA/0.5mA Input On Voltage VI(ON) 3 1.6  V VO = 0.3V, IC = 2mA Input Current II   0.88 mA VI = 5V Input Resistor +/- 30% (Base) R1 7 10 13 KΩ  Resistor Ratio (R2/R1) 0.8 1 1.2   SMALL SIGNAL CHARACTERISTICS Transition Frequency (Gain bandwidth product) fT  250  MHz VCE = 10V, IE = 5mA, f = 100MHz *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 Typical Characteristics @Tamb = 25°C unless otherwise specified P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve (Note 3) A Notes: 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf.

Document number: DS30871 Rev. 7 - 4 4 of 8 www.diodes.com June 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX4710H Characteristics Curves of PNP Transistor (Q1) @Tamb = 25°C unless otherwise specified I , COLLECTOR CURRENT (A)C V , COLLECTOR EMITTER VOLTAGE (V) Fig. 2 V vs. I CE CE C 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 lb = 1.25mA lb = 1.5mA lb = 1.75mA lb = 1mA lb = 0.75mA lb = 0.25mA lb = 0.5mA lb = 2.25mA lb = 2mA h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain vs. I C C 100 150 200 250 300 350 400 0.1 1 100 1000 T = 150 CA ° T = -55 CA ° T = 25 CA ° T = 125 CA ° T = 85 CA ° V = 5VCE V , COLLECTOR VOLTAGE (V)CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 4 I vs. V C C CE(SAT) 0.1 1 100 1000 T = -55 CA ° T = 150 CA ° T = 25 CA ° T = 85 CA ° T = 125 CA ° V , COLLECTOR VOLTAGE (V)CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 5 I vs. V C C CE(SAT) 0.1 1 100 1000 T = 150 CA ° T = -55 CA ° T = 125 CA ° T = 25 CA ° T = 85 CA °

Document number: DS30871 Rev. 7 - 4 5 of 8 www.diodes.com June 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX4710H I , OUTPUT CURRENT (mA)C Fig. 6 Input Voltage vs. Collector Current T = -55 CA ° T = 150 CA ° T = 125 CA ° T = 25 CA ° T = 85 CA ° Characteristics Curves of NPN Transistor (Q2) @Tamb = 25°C unless otherwise specified h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 7 DC Current Gain vs. IC 0.1 1 100 1000 V = 5VCE T = 150 CA ° T = -55 CA ° T = 125 CA ° T = 25 CA ° T = 85 CA ° I , COLLECTOR CURRENT (A)C V , COLLECTOR EMITTER VOLTAGE (V)CE Fig. 8 V vs. ICE C 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 l = 1.25mAb l = 1.5mAb l = 1.75mAb l = 1mAb l = 0.75mAb l = 0.25mAb l = 0.5mAb l = 2mAb

Document number: DS30871 Rev. 7 - 4 6 of 8 www.diodes.com June 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX4710H V , COLLECTOR EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) I C CFig. 9 vs. V CE(SAT) 0.1 1 100 1000 T = 150 CA ° T = -55 CA ° T = 125 CA ° T = 25 CA ° T = 85 CA ° V , COLLECTOR EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) I C CFig. 10 vs. V CE(SAT) 0.1 1 100 1000 T = -55 CA ° T = 150 CA ° T = 25 CA ° T = 125 CA ° T = 85 CA ° V , INPUT VOLTAGE (V)I(ON) I , COLLECTOR CURRENT (mA) Input Voltage vs. Output Current C Fig. 11 0.1 1 100 V = 0.3VCE T = -55 CA ° T = 150 CA ° T = 25 CA ° T = 85 CA ° T = 125 CA °

Document number: DS30871 Rev. 7 - 4 7 of 8 www.diodes.com June 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX4710H C02YM Ordering Information (Note 5) Device Marking Code Packaging Shipping DCX4710H-7 C02 SOT-563 3000/Tape & Reel Marking Information Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 Code T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D C02 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 9 = September Fig. 12

Document number: DS30871 Rev. 7 - 4 8 of 8 www.diodes.com June 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX4710H IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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