DCX124EK-7-F

DCX124EK-7-F DIODES | Alldatasheet

Document overview

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• PDF pages: 12

Technical content

Features

• Epitaxial Planar Die Construction
• Built-In Biasing Resistors
• Available in Lead Free/RoHS Compliant Version (Note 1)
• “Green” Device (Note 2) Part Number R1 R2 Marking DCX124EK 22KΩ 22K Ω C17 DCX144EK 47KΩ 47K Ω C20 DCX114YK 10KΩ 47K Ω C14 DCX123JK 2.2KΩ 47K Ω C06 DCX114EK 10KΩ 10K Ω C13 DCX115EK 100KΩ 100K Ω C15 DCX143TK 4.7KΩ - C07 DCX114TK 10KΩ - C12 Mechanical Data
• Case: SC-74R (Note 3)
• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Copper leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Table and Page 11
• Ordering Information: See Page 11
• Weight: 0.015 grams (approximate) R1R2 C1 B2 E2 E1 B1 C2 C1 B2 E2 E1 B1 C2 R1, R2 Device Schematic R1 only Device Schematic Maximum Ratings NPN Section @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC 50 V Input Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK VIN -10 to +40 -10 to +40 -6 to +40 -5 to +12 -10 to +40 -10 to +40 -5V max -5V max V Output Current DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK IO 100 100 100 mA Output Current All IC(MAX) 100 mA Thermal Characteristics NPN Section Characteristic Symbol Value Unit Power Dissipation (Total) (Note 4) PD 300 mW Thermal Resistance, Junction to Ambient Air (Note 4) RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 3. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device datasheets for exact details regarding the location of the pin one indicator. exceeded.

DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 2 of 12 www.diodes.com October 2008 © Diodes Incorporated DCX (xxxx) K Maximum Ratings PNP Section @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC 50 V Input Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK VIN +10 to –40 +10 to –40 +6 to –40 +5 to –12 +10 to –40 +10 to –40 +5V max +5V max V Output Current DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK IO -30 -30 -70 -100 -50 -20 -100 -100 mA Output Current All IC(MAX) -100 mA Thermal Characteristics PNP Section Characteristic Symbol Value Unit Power Dissipation (Total) (Note 4) PD 300 mW Thermal Resistance, Junction to Ambient Air (Note 4) RθJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics NPN Section @TA = 25°C unless otherwise specified Characteristic (DDC143TK & DDC114TK only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 ⎯ ⎯ V IC = 50μA Collector-Emitter Breakdown Voltage BVCEO 50 ⎯ ⎯ V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 5 ⎯ −− V IE = 50μA Collector Cutoff Current ICBO ⎯ ⎯ 0.5 μA VCB = 50V Emitter Cutoff Current IEBO ⎯ ⎯ 0.5 μA VEB = 4V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 0.3 V IC/IB = 2.5mA / 0.25mA – DCX143TK IC/IB = 1mA / 0.1mA – DCX114TK DC Current Transfer Ratio hFE 100 250 600 ⎯ IC = 1mA, VCE = 5V Input Resistor (R1) Tolerance ΔR1 -30 ⎯ +30 % ⎯ Gain-Bandwidth Product* fT ⎯ 250 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only

DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 3 of 12 www.diodes.com October 2008 © Diodes Incorporated DCX (xxxx) K Electrical Characteristics NPN Section (continued) @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK Vl(OFF) 0.5 0.5 0.3 0.5 0.5 0.5 1.1 1.1 1.1 1.1 ⎯ V VCC = 5V, IO = 100μA Input Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK Vl(ON) ⎯ 1.65 1.9 1.9 1.9 3.0 3.0 1.4 1.1 3.0 3.0 V VO = 0.3V, IO = 5mA VO = 0.3V, IO = 2mA VO = 0.3V, IO = 1mA VO = 0.3V, IO = 5mA VO = 0.3V, IO = 10mA VO = 0.3V, IO = 1mA Output Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK VO(ON) ⎯ 0.1 0.3 V IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA IO/Il = 5mA / 0.25mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA Input Current DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK Il ⎯ ⎯ 0.36 0.18 0.88 3.6 0.88 0.15 mA VI = 5V Output Current IO(OFF) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V DC Current Gain DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK Gl ⎯ ⎯ ⎯ VO = 5V, IO = 5mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 5mA VO = 5V, IO = 5mA Input Resistor (R1) Tolerance ΔR1 -30 ⎯ +30 % ⎯ Resistance Ratio Tolerance R2/R1 -20 ⎯ +20 % ⎯ Gain-Bandwidth Product* fT ⎯ 250 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only Electrical Characteristics PNP Section @TA = 25°C unless otherwise specified Characteristic (DCX143TK & DCX114TK only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -50 ⎯ ⎯ V IC = -50μA Collector-Emitter Breakdown Voltage BVCEO -50 ⎯ ⎯ V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -5 ⎯ ⎯ V IE = -50μA Collector Cutoff Current ICBO ⎯ ⎯ -0.5 μA VCB = -50V Emitter Cutoff Current IEBO ⎯ ⎯ -0.5 μA VEB = -4V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ -0.3 V IC/IB = -2.5mA / -0.25mA - DCX143TK IC/IB = -1mA / -0.1mA - DCX114TK DC Current Transfer Ratio hFE 100 250 600 ⎯ IC = -1mA, VCE = -5V Input Resistor (R1) Tolerance ΔR1 -30 ⎯ +30 % ⎯ Gain-Bandwidth Product* fT ⎯ 250 ⎯ MHz VCE = -10V, IE = 5mA, f = 100MHz * Transistor - For Reference Only

DCX (xxxx) K Electrical Characteristics PNP Section (Continued) @TA = 25°C unless otherwise specified Characteristic DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 4 of 12 www.diodes.com October 2008 © Diodes Incorporated Symbol Min Typ Max Unit Test Condition DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK Vl(OFF) -0.5 -0.5 -0.3 -0.5 -0.5 -0.5 -1.1 -1.1 −1.1 −1.1 ⎯ V VCC = -5V, IO = -100μA Input Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK Vl(ON) ⎯ -1.9 -1.9 -1.9 -1.9 -3.0 -3.0 -1.4 -1.1 -3.0 -3.0 V VO = -0.3V, IO = -5mA VO = -0.3V, IO = -2mA VO = -0.3V, IO = -1mA VO = -0.3V, IO = -5mA VO = -0.3V, IO = -10mA VO = -0.3V, IO = -1mA Output Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK VO(ON) ⎯ -0.1 -0.3 V IO/Il = -10mA /-0.5mA IO/Il = -10mA /-0.5mA IO/Il = -5mA /-0.25mA IO/Il = -5mA /-0.25mA IO/Il = -10mA/-0.5mA IO/Il = -5mA/-0.25mA Input Current DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK Il ⎯ ⎯ -0.36 -0.18 -0.88 -3.6 -0.88 -0.15 mA VI = -5V Output Current IO(OFF) ⎯ ⎯ -0.5 μA VCC = 50V, VI = 0V DC Current Gain DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK Gl ⎯ ⎯ ⎯ VO = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA VO = -5V, IO = -5mA Input Resistor (R1) Tolerance ΔR1 -30 ⎯ +30 % ⎯ Resistance Ratio Tolerance R2/R1 -20 ⎯ +20 % ⎯ Gain-Bandwidth Product* fT ⎯ 250 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz *Transistor - For Reference Only Typical Curves – Total Device P , POW ER DISSIPATION (m W D T AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature A ,

DCX (xxxx) K Typical Curves – DCX124EK PNP Section 100 150 200 250 300 350 0.1 1 10 100 1,000 VCE = -5V T = 2 5 CA ° T = 8 5 CA ° T = 125 CA °T = 150 CA ° I = 0.7mAb I = 0.8mAb I = 0.6mAb I = 0.5mAb I = 0.4mAb I = 0.3mAb I = 0.2mAb I = 0.1mAb I = 0.9mAb I , COLLECTOR CURRENT (A) C DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 5 of 12 www.diodes.com October 2008 © Diodes Incorporated V , COLLECTOR-EM ITTER SATURATION VOLTAGE (V) CE(SAT) T = 1 2 5 CA ° T = 1 5 0 CA ° T = 2 5 CA ° T = - 5 5 CA ° T = 8 5 CA ° I/ I = 1 0CB Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current T = - 5 5 CA ° T = 8 5 CA ° T = 1 2 5 CA ° T = 1 5 0 CA ° T = 2 5 CA ° V = - 5 VCE I/ I = 1 0CB Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current T = 1 5 0 CA ° T = - 5 5 CA ° T = 2 5 CA ° T = 8 5 CA ° T = 1 2 5 CA ° Fig. 7 V vs. II(ON) C V = - 0 . 3 VCE T = 2 5 CA ° T = 1 5 0 CA ° T = 8 5 CA °T = - 5 5 CA ° T = 1 2 5 CA °

DCX (xxxx) K Typical Curves – DCX124EK NPN Section V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig. 8 Typical Collector Current vs. Collector-Emitter Voltage I , COLLECTOR CURRENT (A)C I , COLLECTOR CURRENT (mA)C Fig. 9 Typical DC Current Gain vs. Collector Current T = 1 5 0 CA ° T = 2 5 CA ° T = - 5 5 CA ° T = 8 5 CA ° T = 1 2 5 CA ° h DC CURRENT GAIN FE, V = 5 VCE DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 6 of 12 www.diodes.com October 2008 © Diodes Incorporated I , COLLECTOR CURRENT (mA)C I/ I = 1 0CB Fig. 10 Collector-Emitter Saturation Voltage vs. Collector Current T = 125 CA ° T = 8 5 CA ° T = - 5 5 CA ° T = 150 CA ° T = 2 5 CA ° V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA)C V = 5 VCE Fig. 11 Base-Emitter Turn-On Voltage vs. Collector Current T = - 5 5 CA ° T = 2 5 CA ° T = 8 5 CA ° T = 1 2 5 CA ° T = 1 5 0 CA ° V , BASE-EMITTER TURN-ON VOLTAGE (V)BE(ON) I , COLLECTOR CURRENT (mA)C Fig. 12 Typical Base-Emitter Saturation Voltage vs. Collector Current T = 1 2 5 CA ° T = - 5 5 CA ° T = 2 5 CA ° T = 8 5 CA ° T = 1 5 0 CA ° V , BASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) I/ I = 1 0CB I , OUTPUT CURRENT (mA)C VCE = 0.3V Fig. 13 V vs. II(ON) C T = 1 2 5 CA ° T = 1 5 0 CA ° T = - 5 5 CA ° T = 2 5 CA °T = 8 5 CA ° V , INPUT VOLTAGE (V)I(ON)

DCX (xxxx) K Typical Curves – DCX123JK PNP Section 1,000 100 11 0 h, D 100 C CURRENT GAIN FE I , COLLECTOR CURRENT (mA) Fig. 14 Typical DC Current Gain vs. Collector Current C V = 1 0CE 0.001 0.01 0.1 0 10 20 30 40 50 V, COLLECTOR EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 15 Typical Collector Emitter Saturation Voltage vs. Collector Current C I/ I = 1 0CB T = - 2 5 CA ° T = 7 5 CA ° T = 2 5 CA ° CAPACITANCE (pF) V , REVERSE VOLTAGE (V) Fig. 16 Typical Capacitance Characteristics R I = 0 m AE Cobo 0.001 0.01 100 01 2 34 89 10 I, COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 17 Collector Current vs. Input Voltage in 5 7 0.1 0.1 01 0 2 0 3 0 4 0 I , COLLECTOR CURRENT (mA) Fig. 18 Input Voltage vs. Collector Current C 5 0 V = 0 . 2O V , INPUT VOLTAGE (V)in T = -25°CA T = 2 5 ° CA T = 7 5 CA ° DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 7 of 12 www.diodes.com October 2008 © Diodes Incorporated

DCX (xxxx) K Typical Curves – DCX123JK NPN Section 1,000 100 11 0 h, D 100 C CURRENT GAIN FE I , COLLECTOR CURRENT (mA) Fig. 19 Typical DC Current Gain vs. Collector Current C V = 1 0CE 0.001 0.01 0.1 0 10 20 30 40 50 V, COLLECTOR EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 20 Collector Emitter Saturation Voltage vs. Collector Current C I/ I = 1 0CB T = - 2 5 CA ° T = 7 5 CA ° T = 2 5 CA ° V , REVERSE VOLTAGE (V) Fig. 21 Typical Capacitance Characteristics R I = 0 m AE Cobo 0.001 0.01 100 0 1 234 89 10 I, COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 22 Collector Current vs. Input Voltage in 5 67 0.1 0.1 01 0 2 0 3 0 4 0 I , COLLECTOR CURRENT (mA) Fig. 23 Input Voltage vs. Collector Current C 5 0 V = 0 . 2O V , INPUT VOLTAGE (V)in T = -25°CA DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 8 of 12 www.diodes.com October 2008 © Diodes Incorporated

DCX (xxxx) K Typical Curves – DCX114TK PNP Section 1,000 DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 9 of 12 www.diodes.com October 2008 © Diodes Incorporated 100 11 0 h, D 100 0.001 0.01 0.1 0 10 20 30 40 50 V, COLLECTOR EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 25 Typical Collector Emitter Saturation Voltage vs. Collector Current C I/ I = 1 0CB T = - 2 5 CA ° T = 7 5 CA ° T = 2 5 CA ° C CURRENT GAINFE I , COLLECTOR CURRENT (mA) Fig. 24 Typical DC Current Gain vs. Collector Current C CAPACITANCE (pF) V , REVERSE VOLTAGE (V) Fig. 26 Typical Capacitance Characteristics R I = 0 m AE Cobo 0.01 0.1 100 012 34 89 10 I, COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 27 Collector Current vs. Input Voltage in T = -25°CA 5 67 T = 75°CA T = 25°CA 0.001 0.1 0 1 02 03 04 0 I , COLLECTOR CURRENT (mA) Fig. 28 Input Voltage vs. Collector Current C 5 0 V = 0 . 2O V , INPUT VOLTAGE (V)in T = 2 5 ° CA

DCX (xxxx) K Typical Curves- DCX114TK NPN Section 0.001 0.01 0.1 0 10 20 30 40 50 V, COLLECTOR EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 30 Typical Collector Emitter Saturation Voltage vs. Collector Current C I/ I = 1 0CB T = - 2 5 CA ° T = 7 5 CA ° T = 2 5 CA ° 1,000 100 11 0 100 I , COLLECTOR CURRENT (mA)C Fig. 29 Typical DC Current Gain vs. Collector Current V = 1 0CET = 7 5 ° CA h , DC CURRENT GAINFE T = -25°CA T = 2 5 ° CA 02 0 DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 10 of 12 www.diodes.com October 2008 © Diodes Incorporated Fig. 31 Typical Capacitance Characteristics 105 15 25 I = 0 m AE CAPACITANCE (pF) Cobo 0.01 0.1 100 012 3 4 89 10 V , INPUT VOLTAGE (V)in Fig. 32 Collector Current vs. Input Voltage 5 67

0.001 I , COLLECTOR CURRENT (mA)C

0.1 01 0 2 0 3 0 4 0 I , COLLECTOR CURRENT (mA)C Fig. 33 Input Voltage vs. Collector Current 5 0 V = 0.2O V , INPUT VOLTAGE (V)in

Ordering Information (Notes 5 & 6) DCX (xxxx) K Part Number DCX (xxxx) K Document number: DS30350 Rev es.com October 2008 © Diodes Incorporated . 6 - 2 11 of 12 www.diod Case Packaging DCX124EK-7 SC-74R 3000/Tape & Reel DCX144EK-7 SC-74R 3000/Tape & Reel DCX114YK-7 SC-74R 3000/Tape & Reel DCX123JK-7 SC-74R 3000/Tape & Reel DCX114EK-7 SC-74R 3000/Tape & Reel DCX115EK-7 SC-74R 3000/Tape & Reel DCX143TK-7 SC-74R 3000/Tape & Reel DCX114TK-7 SC-74R 3000/Tape & Reel 6. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DCX114TK-7-F. Marking Information Year 2007 2008 2009 10 2011 2012 201 4 2015 Cxx = Product Type Marking Code (See Page 1) YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) Cxx YM Date Code Key 2006 20 3 201 Code U V W Y Z C T X A B Month Feb Mar Apr M Jul Aug Sep Dec Jan ay Jun Oct Nov Code 2 3 4 5 6 7 8 9 D 1 O N Package Outline Dimensions Suggested Pad Layout SC-74R Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 α 0° 8° ⎯ All Dimen ns in mmsio Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C 2.40 E 0.95 A B C H K M J LD X Z Y C EE G

DCX (xxxx) K Document number: DS30350 Rev. 6 - 2 12 of 12 www.diodes.com October 2008 © Diodes Incorporated DCX (xxxx) K IMPORTANT NOTICE Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Inco rporated and all the c o represented on our website, ompanies wh se products are harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authoriz ed for use as critical components in life sup t devices o ms without the e xpressed written por r syste approval of the President of Diodes Incorporated.