DCX124EK_1 DIODES | Alldatasheet

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@ TA = 25/c176C unless otherwise specified A M J LD B C H K G Mechanical Data /c183Case: SC-74R (Note 4) /c183Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 /c183Moisture Sensitivity: Level 1 per J-STD-020C /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Also Available in Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Please see Ordering Information, Note 5, on Page 3 /c183Terminal Connections: See Diagram /c183Marking: Date Code and Marking Code (See Diagrams & Page 4) /c183Ordering Information (See Page 3) /c183Weight: 0.015 grams (approximate) NEW PRODUCT P/N R1 R2 MARKING DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK 22K/c87 47K/c87 10K/c87 2.2K/c87 10K/c87 4.7K/c87 10K/c87 22K/c87 47K/c87 47K/c87 47K/c87 10K/c87 C17 C20 C14 C06 C13 C07 C12 SC-74R (Note 4) Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 /c970/c1768/c176/c190 All Dimensions in mm R1R2 R2 R1 R1, R2 R1 Only SCHEMATIC DIAGRAM DCX (xxxx) K COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SC-74R DUAL SURFACE MOUNT TRANSISTOR 2. 200mW per element must not be exceeded. 3. No purposefully added lead. 4. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device datasheets for exact details regarding the location of the pin one indicator. Maximum Ratings NPN Section

  1. 200mW per element must not be exceeded. DS30350 Rev. 5 - 2 2 of 11 DCX (xxxx) K www.diodes.com Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK V l(off) 0.5 0.5 0.3 0.5 0.5 1.16 1.1 /c190 /c190 1.1 /c190V V CC = 5V, IO = 100/c109A DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK V l(on) /c190 1.65 1.9 /c45/c45 /c45/c45 1.9 3.0 3.0 1.4 1.1 3.0 V V O = 0.3, IO = 5mA VO = 0.3, IO = 2mA VO = 0.3, IO = 1mA VO = 0.3, IO = 5mA VO = 0.3, IO = 10mA Output Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK V O(on) /c190 0.1 0.3 V IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA IO/Il = 5mA / 0.25mA IO/Il = 10mA / 0.5mA Input Current DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK I l /c190/c190 0.36 0.18 0.88 3.6 0.88 mA V I = 5V Output Current IO(off) /c190/c190 0.5 /c109A VCC = 50V, VI = 0V DC Current Gain DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK G l /c190/c190 /c190 V O = 5V, IO = 5mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 5mA Input Resistor (R1) Tolerance /c68R1 -30 /c190+30 % /c190 Resistance Ratio Tolerance R2/R1 -20 /c190+20 /c37 /c190 Gain-Bandwidth Product* fT /c190 250 /c190MHz VCE = 10V, IE = 5mA, f = 100MHz Electrical Characteristics NPN Section @ TA = 25/c176C unless otherwise specified NEW PRODUCT * Transistor - For Reference Only Characteristic (DDC143TK & DDC114TK only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 /c190/c190 V IC = 50/c109A Collector-Emitter Breakdown Voltage BVCEO 50 /c190/c190 V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 5 /c190/c45 /c45V IE = 50/c109A Collector Cutoff Current ICBO /c190/c1900.5 /c109A VCB = 50V Emitter Cutoff Current IEBO /c190/c1900.5 /c109A VEB = 4V Collector-Emitter Saturation Voltage VCE(sat) /c190/c1900.3 V IC/IB = 2.5mA / 0.25mA DCX143TK IC/IB = 1mA / 0.1mA DCX114TK DC Current Transfer Ratio hFE 100 250 600 /c190 IC = 1mA, VCE = 5V Input Resistor (R1) Tolerance /c68R1 -30 /c190+30 % /c190 Gain-Bandwidth Product* fT /c190250 /c190 MHz VCE = 10V, IE = -5mA, f = 100MHz Characteristic Symbol Value Unit Supply Voltage, (3) to (1) VCC 50 V Input Voltage, (2) to (1) DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK V IN +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 Vmax +5 Vmax V Output Current DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX143TK DCX114TK I O -30 -30 -70 -100 -50 -100 -100 mA Output Current All IC (Max) -100 mA Power Dissipation (Total) (Note 2) Pd 300 mW Thermal Resistance, Junction to Ambient Air (Note 1) R/c113JA 833 /c176C/W Operating and Storage and Temperature Range Tj,T STG -55 to +150 /c176C Maximum Ratings PNP Section @ TA = 25/c176C unless otherwise specified
  1. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DCX114TK-7-F. DS30350 Rev. 5 - 2 3 of 11 DCX (xxxx) K www.diodes.com Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK V l(off) -0.5 -0.5 -0.3 -0.5 -0.5 -1.16 -1.1 /c190 /c190 /c451.1 /c190V V CC = -5V, IO = -100/c109A DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK V l(on) /c190 -1.9 -1.9 /c190 /c190 -1.9 -3.0 -3.0 -1.4 -1.1 -3.0 V V O = -0.3, IO = -5mA VO = -0.3, IO =- 2mA VO = -0.3, IO = -1mA VO = -0.3, IO = -5mA VO = -0.3, IO = -10mA Output Voltage DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK V IO/Il = -10mA /-0.5mA IO/Il = -10mA /-0.5mA IO/Il = -5mA /-0.25mA IO/Il = -5mA /-0.25mA IO/Il = -10mA/-0.5mA Input Current DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK I l /c190/c190 -0.36 -0.18 -0.88 -3.6 -0.88 mA V I = -5V Output Current IO(off) /c190/c190 -0.5 /c109A VCC = 50V, VI = 0V DC Current Gain DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK G l /c190/c190 /c190 V O = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA Input Resistor (R1) Tolerance /c68R1 -30 /c190+30 % /c190 Resistance Ratio Tolerance R2/R1 -20 /c190+20 /c37 /c190 Gain-Bandwidth Product* fT /c190 250 /c190MHz VCE = -10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only Characteristic (DCX143TK & DCX114TK only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -50 /c190/c190 V IC = -50/c109A Collector-Emitter Breakdown Voltage BVCEO -50 /c190/c190 V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -5 /c190/c190 V IE = -50/c109A Collector Cutoff Current ICBO /c190/c190-0.5 /c109A VCB = -50V Emitter Cutoff Current IEBO /c190/c190-0.5 /c109A VEB = -4V Collector-Emitter Saturation Voltage VCE(sat) /c190/c190-0.3 V IC/IB = 2.5mA / 0.25mA DCX143TK IC/IB = 1mA / 0.1mA DCX114TK DC Current Transfer Ratio hFE 100 250 600 /c190 IC = -1mA, VCE = -5V Input Resistor (R1) Tolerance /c68R1 -30 /c190+30 % /c190 Gain-Bandwidth Product* fT /c190250 /c190 MHz VCE = -10V, IE = 5mA, f = 100MHz @ TA = 25/c176C unless otherwise specifiedElectrical Characteristics PNP Section NEW PRODUCT Device Packaging Shipping DCX124EK-7 SC-74R 3000/Tape & Reel DCX144EK-7 SC-74R 3000/Tape & Reel DCX114YK-7 SC-74R 3000/Tape & Reel DCX123JK-7 SC-74R 3000/Tape & Reel DCX114EK-7 SC-74R 3000/Tape & Reel DCX143TK-7 SC-74R 3000/Tape & Reel DCX114TK-7 SC-74R 3000/Tape & Reel Ordering Information (Note 5)

DS30350 Rev. 5 - 2 4 of 11 DCX (xxxx) K www.diodes.com Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 123 45 6 7 89 OND Year 2006 2007 2008 2009 Code T UVW Date Code Key XXX YM XXX = Product Type Marking Code See Sheet 1 Diagrams YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Marking Information NEW PRODUCT TYPICAL CURVES - DCX124EK PNP SECTION 100 150 200 250 300 350 0 25 50 75 100 125 150 175 P , POWER DISSIPATION (mW) D T AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve A , VCE , COLLECTOR EMITTER VOLTAGE (V) Fig. 2 V vs. ICE C 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 0.4 0.8 1.2 1.6 2 I= 0 . 7 m Ab I = 0.8mAb I= 0 . 6 m Ab I= 0 . 5 m Ab I = 0.4mAb I= 0 . 3 m Ab I= 0 . 2 m Ab I= 0 . 1 m Ab I= 0 . 9 m Ab I , COLLECTOR CURRENT (A)C I , COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain C 100 150 200 250 300 350 0.1 1 10 100 1000 VCE =- 5 V h , DC CURRENT GAIN FE T=A 25 C° T=A 85 C° T=A 125 C°T = 150 CA ° T=A -55 C°

0 25 50 75 100 125 150 175 P , POWER DISSIPATION (mW) D T AMBIENT TEMPERATURE ( C) Fig. 8 Power Derating Curve I , COLLECTOR CURRENT (mA)C 0.1 1 10 100 Fig. 5 V vs. IBE C T=A -55 C° T=A 85 C° T=A 125 C° T=A 150 C° T=A 25 C° V , BASE-EMITTER VOLTAGE (V) BE V = -5VCE IC , COLLECTOR CURRENT (mA) Fig. 4 V vs ICE(SAT) C 0.001 0.01 0.1 0 1 02 03 04 05 0 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V)CE(SAT) T=A 125 C° T=A 150 C° T=A 25 C° T=A -55 C° T=A 85 C° I/ I = 1 0CB DS30350 Rev. 5 - 2 5 of 11 DCX (xxxx) K www.diodes.com NEW PRODUCT I , COLLECTOR CURRENT (mA)C 0.1 1 10 100 I/ I = 1 0CB Fig. 6 V vs. IBE(SAT) C T=A 150 C° T=A -55 C° T=A 25 C° T=A 85 C° T=A 125 C° V , BASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) TYPICAL CURVES - DCX124EK PNP SECTION I , OUTPUT CURRENT (mA)C 0.1 1 10 100 Fig. 7 V vs. II(ON) C V = -0.3VCE T=A 25 C° T=A 150 C° T=A 85 C°T=A -55 C° T=A 125 C° V , INPUT VOLTAGE (V) I(ON) TYPICAL CURVES - DCX124EK NPN SECTION

DS30350 Rev. 5 - 2 6 of 11 DCX (xxxx) K www.diodes.com NEW PRODUCT TYPICAL CURVES - DCX124EK NPN SECTION V , COLLECTOR EMITTER VOLTAGE (V)CE 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 Fig. 9 V vs. ICE C I = 0.8mAb I = 0.7mAb I= 0 . 5 m Ab I= 0 . 6 m Ab I= 0 . 3 m Ab I = 0.1mAb I= 0 . 4 m Ab I = 0.9mAb I = 0.2mAb I , COLLECTOR CURRENT (A)C 100 150 200 250 300 350 0.1 1 10 100 1000 I , COLLECTOR CURRENT (mA)c Fig.1 0D CC u r r e n tG a i n T= 1 5 0 CA ° T=A 25 C° T=A -55 C° T=A 85 C° T = 125 CA ° h DC CURRENT GAIN FE, V= 5 VCE I , COLLECTOR CURRENT (mA)C 0.001 0.01 0.1 0 1 02 03 04 05 0 I/ I = 1 0CB Fig. 11 V vs. ICE(SAT) C T=A 125 C° T=A 85 C° T=A -55 C° T=A 150 C° T=A 25 C° V , COLLECTOR-EMITTERSATURATION VOLTAGE (V)CE(SAT) I , COLLECTOR CURRENT (mA)C 0.1 1 10 100 V= 5 VCE Fig. 12 V vs. IBE C T=A -55 C° T=A 25 C° T=A 85 C° T=A 125 C° T=A 150 C° V , BASE-EMITTER VOLTAGE (V) BE I , COLLECTOR CURRENT (mA)C 0.1 1 10 100 Fig. 13 V vs. IBE(SAT) C T=A 125 C° T=A -55 C° T=A 25 C° T=A 85 C° T=A 150 C° V , BASE-EMITTERSATURATION VOLTAGE (V) BE(SAT) I/ I = 1 0CB I , OUTPUT CURRENT (mA)C 2.5 7.5 12.5 17.5 22.5 0.1 1 10 100 VCE =0 . 3 V Fig. 14 V vs. II(ON) C T=A 125 C° T=A 150 C° T=A -55 C° T=A 25 C°T=A 85 C°V , INPUT VOLTAGE (V) I(ON)

DS30350 Rev. 5 - 2 7 of 11 DCX (xxxx) K www.diodes.com 0.1 01 0 2 0 3 0 4 0 5 0 I , COLLECTOR CURRENT (mA) Fig. 20 Input Volta ge vs. Collector Current C V= 0 . 2O V , INPUT VOLTAGE (V) in T=A -25°C T=A 25°C T=A 75 C° 0.001 0.01 100 0 1 234 89 10 I , COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 19 Collector Current Vs. Input Volta ge in T=A -25°C 5 67 T= 2 5 ° CA 0.1 V= 5 VO T= 7 5 ° CA 20 30 C ,CAPA CITANCE (pF) OB V , REVERSE BIAS VOLTAGE (V) Fig. 18 Output Capacitance R 105 15 25 I= 0 m AE 010 1000 100 1 10 100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 17 DC Current Gain V= 1 0CE T=A 75 C° T=A -25 C° T=A 25 C° 0.001 0.01 0.1 0 10 20 30 40 50 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V)CE(SAT) Fig. 16 I , COLLECTOR CURRENT (mA) V vs. I C CE(SAT) C I/ I = 1 0CB T=A -25 C° T=A 75 C° T=A 25 C° -50 0 50 100 150 250 200 150 100 T , AMBIENT TEMPERATURE ( C) Fig. 15 Deratin g Curve A ° P , POWER DISSIPATION (mW) D TYPICAL CURVES - DCX123JK PNP SECTION NEW PRODUCT

DS30350 Rev. 5 - 2 8 of 11 DCX (xxxx) K www.diodes.com NEW PRODUCT 0.1 01 0 2 0 3 0 4 0 5 0 I , COLLECTOR CURRENT (mA) Fig. 26 Input Volta ge vs. Collector Current C V= 0 . 2O V , INPUT VOLTAGE (V) in T=A -25°C T=A 25°C T=A 75 C° 0.001 0.01 100 0 1 234 89 10 I , COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 25 Collector Current Vs. Input Volta ge in T=A -25°C 5 67 T= 2 5 ° CA 0.1 V= 5 VO T= 7 5 ° CA C , CAPACITANCE (pF) OB V , REVERSE BIAS VOLTAGE (V) Fig. 24 Output Capacitance R I= 0 m AE 0 5 10 15 20 25 30 1000 100 1 10 100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 23 DC Current Gain V= 1 0CE T=A 75 C° T=A -25 C° T=A 25 C° 0.001 0.01 0.1 0 10 20 30 40 50 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V)CE(SAT) Fig. 22 I , COLLECTOR CURRENT (mA) V vs. I C CE(SAT) C I/ I = 1 0CB T=A -25 C° T=A 75 C° T=A 25 C° -50 0 50 100 150 250 200 150 100 T , AMBIENT TEMPERATURE ( C) Fig. 21 Deratin g Curve A ° P , POWER DISSIPATION (mW) D TYPICAL CURVES - DCX123JK NPN SECTION

DS30350 Rev. 5 - 2 9 of 11 DCX (xxxx) K www.diodes.com NEW PRODUCT 0.1 01 0 2 0 3 0 4 0 5 0 I , COLLECTOR CURRENT (mA) Fig. 32 Input Volta ge vs. Collector Current C V= 0 . 2O V , INPUT VOLTAGE (V) in T=A -25°C T=A 25°C T=A 75 C° 0.01 0.1 100 01 2 3 4 89 10 I , COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 31 Collector Current Vs. Input Volta ge in T=A -25°C 5 67 T=A 75°C T=A 25°C 0.001 20 30 C , CAPACITANCE (pF) OB V , REVERSE BIAS VOLTAGE (V) Fig. 30 Output Capacitance R 1050 15 25 I= 0 m AE 1000 100 1 10 100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 29 DC Current Gain V= 1 0CE T= 7 5 CA ° T=A -25 C° T=A 25 C° 0.001 0.01 0.1 0 10 20 30 40 50 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V)CE(SAT) Fig. 28 I , COLLECTOR CURRENT (mA) V vs. I C CE(SAT) C I/ I = 1 0CB T=A -25 C° T=A 75 C° T=A 25 C° -50 0 50 100 150 250 200 150 100 T , AMBIENT TEMPERATURE ( C) Fig. 27 Deratin g Curve A ° P , POWER DISSIPATION (mW) D TYPICAL CURVES - DCX114TK PNP SECTION

DS30350 Rev. 5 - 2 10 of 11 DCX (xxxx) K www.diodes.com NEW PRODUCT 01 0 2 0 3 0 4 0 5 0 I , COLLECTOR CURRENT (mA) Fig. 38 Input Volta ge vs. Collector Current C V= 0 . 2O V , INPUT VOLTAGE (V) in T=A -25°C T=A 25°C T=A 75 C° 0.01 0.1 100 01 2 3 4 89 10 I , COLLECTOR CURRENT (mA)C V , INPUT VOLTAGE (V) Fig. 37 Collector Current Vs. Input Volta ge in T=A -25°C 5 67 T=A 75°C T=A 25°C 0.001 0 20 30 C , CAPACITANCE (pF) OB V , REVERSE BIAS VOLTAGE (V) Fig. 36 Output Capacitance R 105 15 25 I= 0 m AE 1000 100 1 10 100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 35 DC Current Gain V= 1 0CE T= 7 5 CA ° T=A -25 C° T=A 25 C° 0.001 0.01 0.1 0 10 20 30 40 50 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V)CE(SAT) Fig. 34 I , COLLECTOR CURRENT (mA) V vs. I C CE(SAT) C I/ I = 1 0CB T=A -25 C° T=A 75 C° T=A 25 C° -50 0 50 100 150 250 200 150 100 T , AMBIENT TEMPERATURE ( C) Fig. 33 Derating Curve A ° P , POWER DISSIPATION (mW) D TYPICAL CURVES - DCX114TK NPN SECTION

DS30350 Rev. 5 - 2 11 of 11 DCX (xxxx) K www.diodes.com NEW PRODUCT IMPORTANT NOTICE LIFE SUPPORT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein;neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such useand will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.