DCX100NS

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 7

Technical content

Features

  • Built in Biasing Resistors
  • Epitaxial Planar Die Construction
  • Lead Free By Design/ROHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • Ideally Suited for Automated Assembly Processes Mechanical Data
  • Case: SOT-563
  • Case Material: Molded Plastic. "Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Marking Information: See Page 5
  • Ordering Information: See Page 5
  • Weight: 0.0035 grams (approximate) Reference Device Type R1 (NOM) R2 (NOM) R3, R4 (NOM) Q1 PNP 1KΩ 10KΩ  Q2 NPN   10KΩ Maximum Ratings: Total Device @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 150 mW Collector Current (using PNP as Pass Transistor) IC(max) 100 mA Thermal Resistance, Junction to Ambient Air (Note 3) RθJA 833 °C/W Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C Sub-Component Device - Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage Vcc -50 V Input Voltage Vin +5 to -10 V Output Current Ic -100 mA Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. Schematic and Pin Configuration SOT-563 PART OBSOLETE – CONTACT US

Document number: DS30761 Rev. 7 - 4 2 of 7 www.diodes.com May 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX100NS Sub-Component Device - Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage Vcc 50 V Input Voltage Vin -10 to +40 V Output Current IO 50 mA Electrical Characteristics: Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage VI(off) -0.3   V VCC = -5V, IO = -100uA VI(on)   -3.0 V VO = -0.3V, IO = -20mA Output Voltage VO(on)  0.1 -0.3 V IO/II = -10mA /-0.5mA Input Current II   -7.2 mA VI = -5V Output Current IO(off)   -0.5 uA VCC = -50V, VI = 0V DC Current Gain GI 33    VO = -5V, IO = -5mA Input Resistor Tolerance ∆ R1 -30  +30 %  Resistance Ratio Tolerance R2/R1 0.8 1 1.2 %  Gain-Bandwidth Product fT  250  MHz VCE = -10V, IE = -5mA, f = 100 MHz Electrical Characteristics: Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage VI(off) 0.5 1.18  V VCC = 5V, IO = 100uA VI(on)  1.85 3 V VO = 0.3V, IO = 10mA Output Voltage VO(on)  0.1 0.3 V IO/II = 10mA / 0.5mA Input Current II   0.88 mA VI = 5V Output Current IO(off)   0.5 uA VCC = 50V, VI = 0V DC Current Gain GI 30    VO = 5V, IO = 5mA Input Resistor Tolerance ∆R1 -30  +30 %  Resistor Ratio Tolerance R2/R1 0.8 1 1.2   Gain-Bandwidth Product fT  250  MHz VCE = 10V, IE = 5mA, f = 100 MHz Typical Characteristics @TA = 25°C unless otherwise specified -50 0 50 100 150 250 200 150 100 T , AMBIENT TEMPERATURE ( C) Fig. 1 Power Derating Curve (Total Device) A ° P , POWER DISSIPATION (mW)D

Document number: DS30761 Rev. 7 - 4 3 of 7 www.diodes.com May 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX100NS Characteristics Curves of PNP Transistor (Q1) @TA = 25°C unless otherwise specified 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 0.1 0.2 I , COLLECTOR CURRENT (A)C V Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage CE, COLLECTOR EMITTER VOLTAGE (V) 100 10.1 10 100 1,000 h , DC CURRENT GAIN FE I , COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current C 150 200 250 300 V = 5VCE T = 85 CA ° T = 125 CA ° T = 150 CA ° V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current C 0.01 0.1 100 0.1 1 10 100 1,000 I /I =10cb T = 25 CA ° T = -55 CA ° T = 85 CA ° T = 125 CA ° T = 150 CA ° 0.01 0.1 0.1 100 1 10 100 1,000 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current C I /I =20cb T =150°CA T =125°CA T =85°CA T = 25°CA T =-55°CA 00.1 101 100 I , COLLECTOR CURRENT (mA) Fig. 6 Typical Input Voltage vs. Collector Current C INPUT VOLTAGE (V) V = 0.3VCE T = -55°CA I , COLLECTOR CURRENT (mA)C Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0.1

Document number: DS30761 Rev. 7 - 4 4 of 7 www.diodes.com May 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX100NS I , COLLECTOR CURRENT (mA)C Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current I , COLLECTOR CURRENT (mA)C Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current Characteristics Curves of NPN Transistor (Q2) @TA = 25°C unless otherwise specified V , COLLECTOR-EMITTER VOLTAGE (V) Fig. 10 Typical Collector Current vs. Collector-Emitter Voltage CE I , COLLECTOR CURRENT (A) C 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 0.4 0.8 1.2 1.6 2 I , COLLECTOR CURRENT (mA)C Fig. 11 Typical DC Current Gain vs. Collector Current 0.1 100 150 200 250 300 V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 12 Typical Collector-Emitter Saturation Voltage vs. Collector Current C 0.01 0.1 100 0.1 1 10 100 1,000 I/ I= 2 0cb T = 150 CA ° T = 125 CA ° T = 85 CA ° T = 25 CA ° T = -55 CA ° V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 13 Typical Collector-Emitter Saturation Voltage vs. Collector Current C 0.01 0.1 100 0.1 1 10 100 1,000

Document number: DS30761 Rev. 7 - 4 5 of 7 www.diodes.com May 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX100NS INPUT VOLTAGE (V) I , COLLECTOR CURRENT (mA) Fig. 14 Typical Input voltage vs. Output Current C 0.1 1 10 100 V , BASE-EMITTER TURN-ON VOLTAGE (V)BE(ON) I , COLLECTOR CURRENT (mA) Fig. 15 Typical Base-Emitter Turn-On Voltage vs. Collector Current C 0.1 1 10 100 V = 5VCE T = 150 CA ° T = 125 CA ° T = 85 CA ° T = 25 CA ° T = -55 CA ° V , BASE-EMITTER SATURATION VOLTAGE (V)BE(SAT) I , COLLECTOR CURRENT (mA) Fig. 16 Typical Base-Emitter Saturation Voltage vs. Collector Current C 0.1 1 10 100 I /I =10cb T = 150 CA ° T = 125 CA ° T = 85 CA ° T = 25 CA ° T = -55 CA ° V , BASE-EMITTER SATURATION VOLTAGE (V)BE(SAT) I , COLLECTOR CURRENT (mA) Fig. 17 Typical Base-Emitter Saturation Voltage vs. Collector Current C 0.1 1 10 100 I /I = 20cb T = 150 CA ° T = 125 CA ° T = 85 CA ° T = 25 CA ° T = -55 CA ° Ordering Information (Note 4) Device Packaging Shipping DCX100NS-7 SOT-563 3000/Tape & Reel Marking Information Date Code Key Year 2005 2006 2007 2008 2009 2010 2011 2012 Code S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D C01 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 9 = September C01 YM

Document number: DS30761 Rev. 7 - 4 6 of 7 www.diodes.com May 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX100NS Package Outline Dimensions Suggested Pad Layout SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 A M L B C H K G D X Z Y C2C2 G

Document number: DS30761 Rev. 7 - 4 7 of 7 www.diodes.com May 2021 © Diodes Incorporated OBSOLETE – PART DISCONTINUED DCX100NS IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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