DC9013 DCCOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable redios in class B push-pull operation. Pinning 1 = Emitter 2 = Base 3 = Collector Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Base Current IB 100 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 40 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 Collector Cutoff Current ICBO - - 100 nA VCB=25V, IE=0 Emitter Cutoff Current IEBO - - 100 nA VEB=3V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=500mA, IB=50mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=500mA, IB=50mA Base-Emitter On Voltage VBE(on) - - 0.9 V IC=10mA, VCE=1V DC Current Gain(1) hFE1 64 120 300 - IC=50mA, VCE=1V hFE2 40 - - - IC=500mA, VCE=1V Transition Frequency fT 100 - - MHz IC=10mA, VCE=1V, f=100MHz Output Capacitance Cob - - 8 pF VCB=10V, f=1MHz
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Rank D E F G H I I1 I2 Range 64~91 78~1 96~135 1 12~166 144~202 176~300 176~246 214~300 Classification of hFE1