DC8550 DCCOM | Alldatasheet

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in 2W output amplifier of portable radios in class B push-pull operation. Pinning 1 = Emitter 2 = Base 3 = Collector TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Rank B C D E Range 85~160 120~200 160~300 250~500 Classification of hFE2 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Base Current IB -500 mA Total Power Dissipation PD 1 W Total Power Dissipation(TC=25oC) PD 2 W Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO -40 - - V IC=-100µA Collector-Emitter Breakdown Voltage BVCEO -25 - - V IC=-2mA Emitter-Base Breakdown Volatge BVEBO -6 - - V IE=-100µA Collector Cutoff Current ICBO - - -0.1 µA VCB=-35V Emitter Cutoff Current IEBO - - -0.1 µA VEB=-6V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.5 V IC=-0.8A, IB=-80mA Base-Emitter Saturation Voltage(1) VBE(sat) - - -1.2 V IC=-0.8A, IB=-80mA Base-Emitter On Voltage(1) VBE(on) - - -1 V IC=-10mA, VCE=-1V hFE1 45 - - - IC=-5mA, VCE=-1V DC Current Gain(1) hFE2 85 - 500 - IC=-100mA, VCE=-1V hFE3 40 - - - IC=-800mA, VCE=-1V Transition Frequency fT 100 - - MHz IC=-50mA, VCE=-10V, f=100MHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%