DC4571D3 SHUNYE | Alldatasheet

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Technical content

Features

Protects one power line or data line Operating voltage: 4.5 V High peak pulse current capability Ultra l ow clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV IEC61000-4- Lightning A µ RoHS Complian t Package: SOD-323 Lead Finish: Matte Tin Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below

Description

Dimensions and Pin Configuration Circuit and Pin Schematic D Device Marking Code Bar denotes Cathode Marking Information Part Number Marking Packaging Reel Size D C D 3000/Tape & Reel 7 inch The DC4571D3 is an Uni-directional high power TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive data and power line. The DC4571D3 complies with the IEC 61000-4-2 (ESD) with ±30kV air and ±30kV contact discharge. It is assembled into an ultra- small lead -free SOD-323 package. The small size and high ESD surge protection make DC4571D3 an ideal choice to protect cell phone, digital cameras, audio players and many other portable applications. Mechanical Characteristics

Ordering Information

D DC 4571 www.shunyegroup.com.cn V2.22

Absolute Maximum Ratings (T A =25°C unless otherwise specified) Electrical Characteristics (T A =25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk W Peak Pulse Current (8/20µs) Ipp A ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) V ESD ±30 ±30 kV Operating Temperature Range T J −55 to +125 Storage Temperature Range Tstg −55 to +150 Parameter Symbol Min Typ Max Unit Test Condition Reverse Working Voltage V RWM 4.5 V Breakdown Voltage V BR 4.7 V I T = 1mA Reverse Leakage Current I R μ A V RWM = 4.5V Clamping Voltage V C 8.5 V I PP = 20A (8 x 20µs pulse) Clamping Voltage V C V I PP = 130A (8 x 20µs pulse) Junction Capacitance C J 500 pF VR = 0V, f = 1MHz DC 4571 www.shunyegroup.com.cn V2.22

Typical Performance Characteristics (T A =25 unless otherwise Specified) Junction Capacitance vs. Reverse Voltage P eak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current (tp = 8/20 μ Power Derating Curve

8 X 20

μ s Pulse Waveform Note Data is taken with a 10x attenuator ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 DC 4571 www.shunyegroup.com.cn V2.22

A 1.50 1.80 0.060 0.071 B 1.20 1.40 0.045 0.054 C 2.30 2.70 0.090 0.107 D 1.10 0.043 E 0.30 0.40 0.012 0.016 F 0.10 0.25 0.004 0.010 H 0.10 0.004 SYM DIMENSIONS MILLIMETERS INCHES A 3.15 0.120 B 0.80 0.031 C 0.80 0.031 DC 4571 www.shunyegroup.com.cn V2.22